FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 31.2 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Limit Typ. Max. Unit Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. VDS = 5V, VGS = 0V - 2800 4200 mA Transconductance gm VDS = 5V, IDS = 1800mA - 2350 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 120mA -0.5 -1.5 -3.0 V -5 - - V 36.5 37.5 - dBm 6.5 7.5 - dB - 1800 2100 mA - 28 - % - - ±0.6 dB -42 -45 - dBc - 4.0 4.5 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-Added Efficiency Idsr ηadd IGS = -120µA VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 10.7 ~ 11.7 GHz, ZS = ZL = 50Ω Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 11.7GHz, ∆f = 10MHz 2-Tone Test Pout = 25dBm S.C.L. Thermal Resistance Rth Channel to Case CASE STYLE: IA Edition 1.4 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1011-6F X, Ku-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER 30 20 10 28 -20 26 -30 IM3 24 -40 -50 22 0 50 100 150 15 200 OUTPUT POWER vs. FREQUENCY 38 P1dB Output Power (dBm) Pin=32dBm P1dB 28dBm 35 26dBm 33 24dBm 31 22dBm 29 20dBm 11.2 11.4 23 25 VDS=10V f = 11.2 GHz 36 34 Pout 32 40 30 30 ηadd 28 20 10 20 11.0 21 26 27 10.8 19 OUTPUT POWER vs. INPUT POWER VDS=10V 37 17 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Case Temperature (°C) Output Power (dBm) Pout 22 24 26 28 30 11.6 Input Power (dBm) Frequency (GHz) 2 32 ηadd (%) 40 VDS=10V f1 = 11.7 GHz 32 f2 = 11.71 GHz 2-tone test 30 IM3 (dBc) Output Power (S.C.L.) (dBc) Total Power Dissipation (W) POWER DERATING CURVE FLM1011-6F X, Ku-Band Internally Matched FET S11 S22 +j50 S21 S12 +90° +j100 +j25 10.9 +j10 10.5 GHz 10.9 10 11.1 +j250 11.3 11.1 10.9 10.5 GHz 11.5 11.3 50Ω 11.5 11.7 11.5 11.1 10.9 10.7 10.7 0 11.3 11.1 10.7 180° 250 10.5 GHz 11.7 11.9 11.3 11.5 11.7 11.9 10.7 1 10.5 GHz -j250 0.1 -j25 -j100 0.2 5 0° -90° -j50 FREQUENCY (MHZ) 4 SCALE FOR |S12| -j10 3 SCALE FOR |S21| 11.7 11.9 11.9 2 S11 S-PARAMETERS VDS = 10V, IDS = 1800mA S21 S12 MAG ANG MAG ANG MAG ANG 10500 .655 149.3 2.654 175.1 .037 10600 .639 139.8 2.766 167.0 .039 10700 .621 130.3 2.896 157.7 10800 .601 120.5 2.899 146.9 10900 .580 109.7 2.855 11000 .555 98.4 2.760 11100 .523 85.9 11200 .488 72.6 11300 .443 11400 .397 11500 .350 27.2 2.740 90.6 .099 11600 .311 9.3 2.785 82.0 .103 11700 .282 -9.1 2.780 70.9 .103 11800 .259 -30.2 2.663 58.7 .108 11900 .252 -51.0 2.469 49.1 .107 S22 MAG ANG 160.5 .230 168.6 151.3 .245 151.6 .049 135.2 .264 136.9 .050 127.2 .270 123.0 137.6 .060 113.5 .293 111.3 128.8 .066 104.6 .284 96.4 2.685 121.5 .078 93.9 .290 83.8 2.683 114.7 .086 83.3 .281 67.2 58.8 2.693 107.1 .091 74.1 .282 49.6 42.8 2.736 99.3 .097 62.7 .286 29.7 53.0 .302 11.4 41.7 .315 -5.8 35.4 .348 -22.4 25.6 .372 -36.8 18.6 .396 -48.2 3 FLM1011-6F X, Ku-Band Internally Matched FET 1.5 Min. (0.059) Case Style "IA" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 9.7±0.15 (0.382) 2-R 1.25±0.15 (0.049) 4 2 3 1.8±0.15 (0.071) 1.5 Min. (0.059) 0.5 (0.020) 3.2 Max. (0.126) 13.0±0.15 (0.512) 1.15 (0.045) 0.2 Max. (0.008) 8.1 (0.319) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 16.5±0.15 (0.650) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4