FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB (Typ.)@f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The device is well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Gate Source Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Symbol Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature VDS VGS Pt* Tstg Tch Channel Temperature Unit Rating 3.5 -3.0 290 -65 to +175 V V mW °C 175 °C *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.1 and -0.075 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Condition Symbol IDSS Min. Limit Typ. Max. Unit VDS = 2V, VGS =0V 10 40 85 mA Transconductance gm VDS = 2V, IDS =10mA 45 65 - mS Pinch-off Voltage Vp VDS = 2V, IDS =1mA -0.1 -1.0 -2.0 V IGS = -10µA -3.0 - - V 0.55 0.65 dB 12.0 - dB 155 200 °C/W Gate Source Breakdown Voltage VGSO Noise Figure NF Associated Gain Gas VDS = 2V, IDS = 10mA, f = 12GHz 10.0 Thermal Resistance Rth Channel to Case Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.2 July 1999 1 - FHX45X GaAs FET & HEMT Chips DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE POWER DERATING CURVE 50 VGS =0V 300 Drain Current (mA) 250 200 150 100 40 -0.2V 30 -0.4V 10 -0.6V -0.8V -1.0V 1 2 3 4 Drain-Source Voltage (V) 50 0 0 50 100 150 0 200 Ambient Temperature (°C) NF & Gas vs. IDS 4 NF & Gas vs. Frequency 14 f=12GHz VDS=2V Gas 13 11 10 2 9 8 1 NF 0 10 Associated Gain (dB) 3 15 2 10 1 5 NF 0 2 7 20 4 6 8 10 12 20 Frequency (GHz) 0 30 Drain Current (mA) Ga (max) & |S21|2 vs. FREQUENCY FHX45X NOISE PARAMETERS VDS=2V, IDS=10mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 Γopt (MAG) (ANG) 0.83 0.72 0.65 0.62 0.61 0.60 0.58 0.55 0.47 12.7 28.2 45.2 62.6 79.4 94.5 106.7 115.0 118.4 NFmin (dB) Rn/50 0.28 0.30 0.34 0.39 0.47 0.55 0.67 0.81 1.00 0.21 0.19 0.17 0.15 0.13 0.11 0.10 0.09 0.09 20 VDS=2V IDS=10mA 15 Gain (dB) Noise Figure (dB) 12 Noise Figure (dB) Gas 3 VDS=2V IDS=10mA Ga (max) 10 |S21|2 5 0 4 6 8 1012 20 Frequency (GHz) 2 Associated Gain (dB) Total Power Dissipation (W) 350 FHX45X GaAs FET & HEMT Chips S11 S22 +j50 S21 S12 +90° +j100 +j25 +j250 18 GHz 5 10 +j10 5 15 10 18 GHz 1 10 25 18 GHz 15 50Ω 100 0.1 GHZ 180° 0.1 GHZ 0.04 0.08 0.12 0.1 GHZ 0.1 GHZ 1 -j10 5 15 10 -j250 10 5 -j25 0.16 -j100 2 3 4 5 -90° -j50 S11 S-PARAMETERS VDS = 2V, IDS = 10mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG 100 1.000 -1.4 6.039 178.9 .002 500 0.998 -6.8 6.025 174.4 .009 1000 0.991 -13.6 5.981 168.8 2000 0.966 -27.0 5.818 157.8 3000 0.928 -39.9 5.572 4000 0.883 -52.1 5.277 5000 0.835 -63.6 6000 0.788 -74.5 7000 0.744 -84.8 4.333 112.9 .085 52.3 .408 -54.0 8000 0.705 -94.5 4.046 105.8 .090 49.9 .389 -59.6 9000 0.671 -103.8 3.782 99.3 .094 48.1 .372 -64.9 10000 0.642 -112.7 3.542 93.2 .097 46.9 .358 -70.0 S22 MAG ANG 89.3 .533 -0.9 86.4 .531 -4.6 .017 82.8 .528 -9.2 .033 75.9 .516 -18.0 147.4 .048 69.6 .497 -26.4 137.7 .060 64.1 .475 -34.2 4.959 128.8 .070 59.3 .452 -41.4 4.640 120.5 .078 55.4 .430 -48.0 11000 0.618 -121.1 3.324 87.5 .100 46.2 .346 -74.9 12000 0.599 -129.3 3.126 82.1 .103 46.0 .336 -79.7 13000 0.584 -137.1 2.948 77.0 .106 46.2 .329 -84.4 14000 0.573 -144.6 2.786 72.1 .109 46.7 .323 -89.0 15000 0.566 -151.7 2.639 67.4 .112 47.3 .319 -93.7 16000 0.561 -158.5 2.504 62.9 .116 48.2 .317 -98.4 17000 0.560 -165.1 2.382 58.5 .120 49.1 .317 -103.1 18000 0.562 -171.3 2.268 54.3 .125 50.0 .318 -107.8 NOTE:* The data includes bonding wires. n: number of wires 0° SCALE FOR |S12| 1 1 18 GHz SCALE FOR |S21| 0 1 Gate n=2 (0.3mm length, 25µm Dia Au wire) Drain n=2 (0.3mm length, 25µm Dia Au wire) Source n=4 (0.3mm length, 25µm Dia Au wire) 3 Download S-Parameters, click here FHX45X GaAs FET & HEMT Chips CHIP OUTLINE 60 90 65 (Unit: µm) Gate 160 Gate 75 350±20 Drain Source 70 50 Die Thickness: 100±20µm 100 450±20 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 TM SuperHEMT is a trademark of Fujitsu Limited. 4