P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) ♦Features SUMITOMO ELECTRIC ♦Functional Diagram · Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free) · Low Noise Figure Pin No. 1 2, 4 3 4 Function Input/Gate Ground Output/Drain 1 ♦Ordering Information ♦Applications · Wireless communication system · Cellular, PCS, PHS, W-CDMA, WLAN Part No Description P0120002P GaAs Power FET 2.11-2.17GHz Application Circuit 1000 KP022J ♦Description 2 Number of devices 1 3 Container 7” Reel Anti-static Bag ♦Absolute Maximum Ratings (@Tc=25°C) P0120002P is a high performance GaAs MESFET housed in a low-cost SOT-89 package. Our originally developed "pulse-doped" channel structure has realized low distortion, which leads to high IP3. The channel structure also achieved an extremely low noise figure. The details about pulse-doped FET channel are described in our products catalog. Utilization of AuSn die attach has realized a low and stable thermal resistance. The lead frame is plated with Sn-Bi to make the device Pb-free. SEI’s long history of manufacturing has cultivated high device reliability. The estimated MTTF of the FET is longer than 15years at Tj of 150°C. You can see the details in Reliability and Quality Assurance. Parameter Symbol Value Units Drain-Source Voltage Vds 8 V Gate-Source Voltage Vgs -4 V Drain Current Ids Idss --RF Input Power (*) Pin 13 dBm (continuous) Power Dissipation Pt 1.7 W Junction Temperature Tj 125 °C Storage Temperature Tstg - 40 to +125 °C Tc: Case Temperature. Operating the device beyond any of these values may cause permanent damage. (*) Measured at 2.1GHz with our test fixture matched to IP3. ♦Electrical Specifications (@Tc=25°C) Parameter DC Values Typ. Max. Vds=3V, Vg=0V --- --- 300 mA gm Vds=6V, Ids=100mA 90 --- --- mS Vp Vds=6V, Ids=10mA - 3.0 --- - 1.7 V |Vgs0| Igso= - 10µA 3.0 --- --- V Rth Channel-Case --- --- 60 °C/W 2.7 GHz Test Conditions Saturated Drain Current Idss Transconductance Pinchoff Voltage Gate-Source Breakdown Voltage Thermal Resistance RF Min. Symbol Frequency Output Power @ 1dB Gain Compression f P1dB Small Signal Gain G Output IP3 IP3 Power Added Efficiency ηadd Vds=6V Ids=80mA f=2.1GHz --- 24 --- dBm --- 15 --- dB --- 41 --- dBm --- 50 --- % Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -1- Units P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦Typical Characteristics Power Derating Curve 2 1 0 0 50 100 150 Transfer Curve 400 Drain Current (mA) Total Power Dispation (W) 3 300 -0.5V 200 -1.0V 100 0 200 Vgs=0V -1.5V -2.0V 0 2 4 Tc (°C) 6 Vds (V) ♦S-parameters (Typical Data) 90 5 13 0.4 3 .0 4 .0 5 .0 0 .2 Scale for |S12| 2.4GHz 0.04 Scale for |S21| 0 .0 -2 -1 35 -3. -1.0 5 -4 - 0.8 0.02 -90 -0. 6 0 - 4. 0 -5.0 S22 1.2GHz 2.4GHz -10 .0 1.2GHz 2.4GHz S11 S12 0 -180 -0.2 2.4GHz 1.2GHz 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 S21 4.0 2.0 1 0.0 .4 -0 6.0 45 1.2GHz 2 .0 0 .6 0 .8 1.0 Tc=25°C, Vds=6V, Ids=100mA, Common Source, Zo=50Ω (Calibrated to device leads) Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -2- 0.06 0 P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC 90 1.2GHz 5 13 0 .4 3 .0 6.0 S21 4.0 4 .0 5 .0 2.4GHz 2.0 1.2GHz 0 .2 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 Scale for |S12| 1.2GHz -4. 0 - 5.0 0 -1.0 -0.8 Ids=100mA Freq(GHz) S11 M ag 0.04 2.4GHz 0 0.06 -90 -0. 6 -2. 0 1.2GHz 0.02 5 -4 .4 -0 -1 35 S22 -3. S11 0 S12 - 10 .0 2.4GHz Ids=80mA 0 -180 2.4GHz Scale for |S21| 0 0.2 1 0.0 - 0.2 45 2 .0 0 .6 0 .8 1.0 Tc=25°C, Vds=6V, Ids=80mA, Common Source, Zo=50Ω (Calibrated to device leads) S11 Ang S21 M ag S21 Ang S12 M ag S12 Ang S22 M ag S22 Ang 1.2 0.861 -102.8 6.088 107.4 0.037 37.7 0.463 -40.9 1.4 0.842 -117.4 5.659 97.5 0.039 31.5 0.442 -45.9 1.6 0.830 -130.3 5.264 88.5 0.041 25.8 0.423 -50.0 1.8 0.820 -141.7 4.892 80.2 0.043 20.7 0.412 -53.4 2.0 0.810 -152.1 4.592 72.4 0.044 16.2 0.398 -58.1 2.2 0.801 -161.6 4.350 64.8 0.046 11.5 0.380 -62.1 2.4 0.789 -171.1 4.139 57.3 0.048 6.4 0.360 -66.0 S11 Ang S21 M ag S21 Ang S12 M ag S12 Ang S22 M ag S22 Ang Freq(GHz) S11 M ag 1.2 0.861 -102.2 6.066 107.7 0.039 37.2 0.462 -41.9 1.4 0.843 -116.7 5.645 97.8 0.042 30.5 0.440 -47.0 1.6 0.830 -129.6 5.256 88.7 0.044 24.7 0.419 -51.2 1.8 0.820 -141.1 4.885 80.4 0.046 19.5 0.407 -54.7 2.0 0.809 -151.5 4.589 72.6 0.047 14.7 0.392 -59.4 2.2 0.800 -161.0 4.347 65.0 0.049 9.9 0.374 -63.3 2.4 0.788 -170.5 4.138 57.6 0.051 4.8 0.352 -67.2 [Note] You can download the S-parameter list from our web site: www.sei.co.jp/GaAsIC/ Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -3- P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC Ids=100mA Ids=80mA 80 80 60 60 IP3 IP3 ηadd G ain Pout 0 G ain 20 Pout (dBm) Gain (dB) IM3 (dBm) IP3 (dBm) IM3/Pout (dBc) ηadd (%) 20 Pout (dBm) Gain (dB) IM3 (dBm) IP3 (dBm) IM3/Pout (dBc) ηadd (%) ηadd 40 40 IM3 -20 -40 IM3/Pout 0 IM3 -20 -40 -60 -60 -80 -80 IM3/Pout -100 -100 -20 -15 -10 -5 0 5 10 15 -20 20 -15 -10 Pin (dBm) -5 0 5 10 15 Pin (dBm) Device: P0120002P Frequency: f1=2.1GHz, f2=2.101GHz Bias: Vds=6V, Ids=100mA Source Matching: Mag 0.71 Ang 131.9° Load Matching: Mag 0.27 Ang 87.0° Device: P0120002P Frequency: f1=2.1GHz, f2=2.101GHz Bias: Vds=6V, Ids=80mA Source Matching: Mag 0.71 Ang 131.9° Load Matching: Mag 0.35 Ang 90.9° [Note] Pout and η add are measured by one signal. The data for the figures above were measured with the load impedance matched to IP3. Id=100mA Id=80mA Pin (dBm) Pout (dBm) Gain (dB) IM3 (dBm) IM3/Pout (dBc) IP3 (dBm) Id (mA) ηadd (%) -15.0 -10.0 -5.0 0.0 5.0 10.0 15.0 0.3 5.7 10.8 15.8 20.9 24.6 25.6 15.3 15.7 15.8 15.8 15.9 14.6 10.6 -73.7 -65.9 -61.4 -28.2 0.2 16.1 20.6 -74.0 -71.7 -72.2 -44.0 -20.7 -8.5 -5.0 37.3 41.6 46.8 37.8 29.9 23.6 21.5 98.1 96.4 93.6 88.6 85.9 93.7 105.7 0.2 0.6 2.1 7.0 23.2 49.0 52.5 Pin (dBm) Pout (dBm) Gain (dB) IM3 (dBm) IM3/Pout (dBc) IP3 (dBm) Id (mA) ηadd (%) -15.0 -10.0 -5.0 0.0 5.0 10.0 15.0 0.2 5.6 10.7 15.8 21.1 24.1 25.0 15.2 15.6 15.7 15.8 16.1 14.1 10.0 -76.1 -66.9 -50.5 -24.1 4.1 17.5 19.8 -76.3 -72.5 -61.2 -39.8 -17.0 -6.7 -5.2 38.3 42.0 41.0 35.4 27.7 21.3 21.0 78.5 76.8 74.1 69.5 70.5 80.4 90.0 0.2 0.8 2.6 8.8 29.4 51.6 52.2 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -4- 20 P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC Tc=25°C, Vds=6V, Ids=100mA, Pin=-5dBm [Pout-Lstate] f = 2.1GHz [IP3-Lstate] Γ pout : 0.73∠ 85.8 Source : 0.79 ∠ 160.5 Pout max : 15.75dBm f1 = 2.1GHz f2 = 2.101GHz +j50 +j25 Γ IP 3 : 0.27∠ 87.0 Source : 0.71∠ 131.9 IP3 max : 45.75d Bm +j50 +j100 15.5 +j100 +j25 15.75 15.25 15.0 40.75 14.75 14.5 25Ω 50Ω 25 Ω 100Ω -j100 -j25 45.75 44.75 43.75 42.75 41.75 50 Ω 100 Ω -j100 -j25 -j50 -j50 Tc= 25°C, Vds=6V, Ids=80mA , Pin=-5d Bm [Pout-Lstate] f = 2.1GHz [IP3-Lstate] Γ pout : 0.74∠ 89.0 Source : 0.79∠ 160.5 Pout max : 16.05dBm f1 = 2.1GHz f2 = 2.101GHz +j50 +j50 +j100 +j25 Γ IP 3 : 0.35∠ 90.9 Source : 0.71∠ 131.9 IP3 max : 40.95d Bm +j25 16.05 +j100 15.8 15.55 15.3 15.05 14.8 38.45 40.45 40.95 39.95 39.45 38.95 25Ω 50Ω 25Ω 100Ω -j100 -j25 50Ω 100Ω -j100 -j25 -j50 -j50 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -5- P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦NF Characteristics 1.0 0 .8 2.0 0.6 2.0 10.0 3.0 4.0 5.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 3.0 -2 -1.0 -0 .8 -2 -1.0 -0.8 -1.0 - 0.6 -2 .0 .0 .0 -3 . 0 -0.8 .4 -0 -0 . 6 - 4.0 -5.0 -0 . 6 4.0 5.0 2.0 1.0 0.8 0.6 0.2 0 10.0 3.0 4.0 5.0 2.0 1.0 0.8 1.0 0.8 2.0 0.6 0.8 0.6 0.6 0.4 -3 .0 .4 -0 1.90 -0.2 -3. 0 1.98 - 0.2 10 .0 1.40 -4. 0 - 5.0 .4 -0 4.0 5.0 10.0 1.48 - 10.0 2.10 3.0 - 10.0 0.2 0.4 0.2 0.2 4.0 5.0 10.0 -0 .2 3.0 - 4 .0 -5.0 4.0 5.0 0 .2 0. 4 0 0. 4 3.0 1.60 Ids=60mA -10.0 1.0 Ids=80mA 0. 4 Ids=100mA [Note] The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C. NFmin (dB) 0.54 0.47 0.73 0.78 0.93 0.96 1.03 1.13 1.60 Γopt M ag Ang(deg) 0.67 -94.6 0.64 -59.3 0.51 -29.0 0.52 9.7 0.48 44.0 0.52 77.5 0.52 108.6 0.53 138.0 0.39 170.7 Freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 NFmin (dB) 0.51 0.44 0.67 0.71 0.87 0.89 0.96 1.07 1.48 Γopt M ag Ang(deg) 0.7 -96.60 0.6 -61.70 0.5 -32.00 0.5 7.60 0.5 40.50 0.5 74.20 0.5 105.70 0.5 134.70 0.4 167.40 Rn/50 0.16 0.24 0.30 0.35 0.29 0.25 0.18 0.10 0.10 Vds=6V Rn/50 0.14 0.21 0.27 0.33 0.29 0.23 0.17 0.10 0.10 Ids=100mA Associated Gain(dB) 23.9 22.4 20.5 19.9 18.9 18.3 17.6 17.1 16.2 Ids=80mA Associated Gain(dB) 23.5 22.1 20.2 19.7 18.6 18.0 17.4 16.8 15.9 Vds=6V Freq. NFmin (GHz) (dB) 0.4 0.49 0.6 0.41 0.8 0.61 1.0 0.66 1.2 0.82 1.4 0.83 1.6 0.90 1.8 1.00 2.0 1.40 Γopt M ag Ang(deg) 0.66 -98.1 0.62 -64.3 0.51 -34.7 0.50 3.7 0.45 36.6 0.49 70.5 0.49 101.8 0.50 130.9 0.35 163.0 Rn/50 0.12 0.18 0.23 0.28 0.23 0.22 0.15 0.10 0.10 Ids=60mA Associated Gain(dB) 23.2 21.7 19.9 19.3 18.3 17.7 17.1 16.5 15.6 2.0 1.8 Ids=100mA 1.6 Ids=80mA 1.4 NF (dB) Vds=6V Freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ids=60mA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0.5 1.0 1.5 Frequency (GHz) 2.0 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -6- 2.5 P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦Application Circuit: 2110-2170MHz R2 L1 Z6 Z5 RF in (Rs=50Ω) Z2 RF out (RL=50Ω) C5 C1 Z1 C4 Z3 C2 D.U.T Z4 L2 Z7 L4 C7 L3 C6 R1 C3 Vd Vg KP022J C1 L1 RF in L2 C2 R1 C5 L3 R2 C7 RF out L4 C4 C6 C3 Vg (-0.7∼-2V) Vd (+6V) Ref. Des. R1 R2 C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 L4 Value 82Ω 470Ω 0.5pF 0.75pF 0.1µF 0.5pF 2200pF 0.1µF 0.75pF 3.3nH 3.3nH 18nH 18nH Part Number SUSUMU RR0816 series MURATA GRM18 series TOKO LL1608 series 20 Ref. Designator Z1 Z2 Z3 Z4 Z5 Z6 Z7 S-parameters (dB) S21 10 0 S11 S22 -10 -20 S12 -30 1.9 2 2.1 Frequency (GHz) 2.2 2.3 Electrical length @ 2.1GHz (deg) 6.8 11.34 4.08 13.61 8.62 6.38 38.56 All microstrip lines have a line impedance of 50Ω. Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -7- P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC [Typical Performance] KP022J Application Circuit Vds=6V, Ids=100mA, Tc=25°C Frequency characteristics were measured with Pout at 13dBm. Pout, G ain, IP3, Ids vs Pin 110 30 105 25 100 Ids 95 20 15 Gain 5 -10 -8 -40 IM3 -50 IM5 90 Pout 10 -30 IM3 (dBc) IM5 (dBc) IP3 Ids (mA) Pout (dBm) Gain (dB) IP3 (dBm) 35 IM3, Im5 vs Pout -20 115 40 -6 -4 -60 85 -2 0 2 4 -70 80 6 8 10 Pin (dBm) 36 Vds=6V IP3 (dBm) IP3 (dBm) Vds=5V Vds=4V 32 15.5 Gain vs Fre quency Vds=6V Gain (dB) Gain (dB) 30 Ids=60mA 2120 2140 2160 Fre quency (MHz) Vds=4V 2180 Gain vs Fre quency 15.5 Ids=80mA 15.1 14.9 Ids=100mA Ids=60mA 14.7 14.7 14.5 2100 Ids=80mA 15.3 Vds=5V 14.9 32 26 2100 2180 15.3 15.1 20 Ids=100mA 28 2120 2140 2160 Fre quency (MHz) 18 34 34 31 2100 16 IP3 vs Fre quency 36 33 14 Pout (dBm) IP3 vs Fre quency 35 12 2120 2140 2160 Fre quency (MHz) 14.5 2100 2180 2120 2140 2160 Fre quency (MHz) 2180 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -8- P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) ♦Caution: Power Supply Sequence SUMITOMO ELECTRIC +6V For safe operation, electric power should be supplied in following sequence. First, the negative voltage should be applied on the gate, and the voltage should be more negative than the pinch-off voltage when you turn on the power supply. Then, drain bias can be applied. Finally, you can turn on the RF signal. When turning off the power supply, the sequence should be (1)RF signal (2)Drain (3)Gate. R1 R3 Vds Q1b Q1a R4 Gate Voltage 0V Drain Voltage 0V On R2 Off Bias Voltage R5 Vgs Bias Voltage On More Than 1mS P0110002P Application Circuit GND GND Off More Than 1mS Vds Ids Q1 R1 R2 R3 R4 R5 ♦Bias Circuit [Passive Biasing] If you use a fixed bias circuit, you sometimes need to control the gate bias to get the same Ids, since the devices have some margin of pinch-off voltage (Vp) variation depending on the wafer lots. If you employ a fixed Vgs biasing for your system, you should closely monitor the drain current, particularly when new wafer lots are introduced. -5V +5.9V 100mA UM T1N (Rohm) 33Ω 1/10W 1.8kΩ 1/10W 1Ω RL series (SUSUM U) 1kΩ 1/10W 1.3kΩ 1/10W If you used Ids other than 100mA, you can calculate the resistance values as follows: [Active Biasing] We recommend using an active bias circuit, which can eliminate the influence of Vp variation. An example of an active bias circuit called “current mirror ” is shown below. Here, two PNP transistors having the minimum variation of Ibe characteristics are used. These transistors adjust Vgs by changing Vds automatically. It will realize the constant current characteristics, regardless of the temperature. The circuit should be connected directly in line with where the voltage supplies would be normally connected with the application circuit. Of course a matching circuit is required, but it is not shown in this figure. R4 set to be 1kΩ I2:Ic of Q1b I1: Ic of Q1a Vbe1: Vbe of Q1a Vbe2: Vbe of Q1b R1=(+6V-Vds+Vbe2-Vbe1)/I1=(+6V-Vds)/I1 R2=(Vds-Vbe2)/I1 R3=(+6V-Vds)/(Ids+I2) R5=|-5V-Vgs|/I2 ♦Attention to Heat Radiation In the layout design of the printed circuit board (PCB) on which the power FETs are attached, the heat radiation to minimize the device junction temperature should be taken into account, since it significantly affects the MTTF and RF performance. In any environment, the junction temperature should be lower than the absolute maximum rating during the device operation and it is recommended that the thermal design has enough margin. [Note] In the measurements of RF performance (Pout vs Pin, etc) using the application circuit described before, the active bias circuit herein was not utilized. The application circuits were biased directly from two power supplies. Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -9- P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) The junction temperature can be calculated by the following formula. [Using Heat Sink] If you cannot get the junction temperature lower than the absolute maximum rating only with the plated thru holes, then you need to employ the heat sink. Attaching the heat sink directly under pin 4 of the device improves the thermal resistance between junction and ambient. Tjmax=(Vds*Ids-Pout)(Rth+Rboard+Rhs)+Ta Pout: Output power Rth: Thermal resistance between channel and case Rboard: Thermal resistance of PCB Rhs: Thermal resistance of heat sink Ta: Ambient temperature Tjmax: Maximum junction temperature φ 3 Plated Thru Hole for 2.5 M achine Screws Generally, there are two ways of heat radiation. One is the plated thru hole and the other is the heat sink. Key points will be illustrated in each case below. Note that no measure against oscillation is adopted in the figures. In the design of circuit and layout, you should take stabilizing into account if necessary. 4-R0.3 0.6 Grand Plane Grand Plane Package Outline φ 3 Plated Thru Hole φ 5 Soldermask Keepout φ 5 Soldermask Keepout φ 0.3 Plated Thru Holes φ 0.4 Plated Thru Holes Grand Plane Keepout φ 0.4 Plated Thru Holes for 2.5 M achine Screws φ 3 Plated Thru Hole for 2.5 M achine Screws φ 5 Soldermask φ 5 Soldermask Keepout 2 2.95 Heatsink 1.9×2.85 (4-R0.3) [Using Thru Hole] □Multiple plated thru holes are required directly below the device. □Place more than 2 machine screws as close to the ground pin (pin 4) as possible. The PCB is screwed on the mounting plate or the heat sink to lower the thermal resistance of the PCB. □Lay out a large ground pad area with multiple plated thru holes around pin 4 of the device. □The required matching and feedback circuit described in the application circuit examples should be connected to the device, although it is not shown in the figure below. Package Outline SUMITOMO ELECTRIC φ 3 Plated Thru Hole for 2.5 M achine Screws [Note] □Ground/thermal vias are critical for the proper device performance. Drills of the recommended diameters should be used in the fabrication of vias. □Add as much copper a s possible to inner and outer layers near the part to ensure optimal thermal performance. □Mounting screws can be added near the part to fasten the board to heat sink. Ensure that the ground/thermal via region contacts the heat sink. □Do not put solder mask on the backside of the PCB in the region where the board contacts the heat sink. □RF trace width depends upon the PCB material and construction. □Use 1 oz. Copper minimum. Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -10- P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) ♦Package Drawing 4.5 ± 0.1 1.6+0.15 -0.2 4.0 ± 0.25 2.5 ± 0.1 1.1 ± 0.3 0.42 ± 0.06 0.47 ± 0.06 1 [Note] The reflow profile is different from the one for Sn-Pb plating. If you use a soldering iron to attach the devices, please beware of the followings. (1) The tip of the iron should be grounded. Or you should use an iron that is electrostatic discharge proof. (2) The temperature of the iron tip should be lower than 240°C and the soldering should be completed within 10 seconds. 0.1 ± 0.05 φ 1.6 ± 0.3 ♦Attention to ESD 0.4+0.03 -0.02 1.5 ± 0.1 0.42 ± 0.06 Generally, GaAs devices are very sensitive to electrostatic discharge (ESD). To reduce the ESD damage, please pay attention to the followings. The devices should be stored with the electrodes short-circuited by conductive materials. The workstation and tools should be grounded for safe dissipation of the static charges in the environment. The workpeople are to wear anti-static clothing and wrist straps. For safety reasons, resistance of 10MΩ or so should exist between workpeople and ground. 3 2 1.5 ± 0.08 1.5 ± 0.08 ♦Laser Marking 1.65MAX B 1 2 3 (0.65) ♦Attention to Moisture A: 0.67+0 -0.1 B: 0.45 The moisture sensitivity level (MSL) of P0120002P is 3, which means that the “floor life” is 168 hours below 30°C with relative humidity (Rh) of 60%. The devices are usually shipped in moisture-resistant alumina-laminated packages. After breaking the packages, they are to be stored under normal temperature and humidity (5-35°C, 45-75%), with no corrosive gases or dust in the environment. Assemble the devices within 168 hours after breaking the package, or you have to bake them at 85°C for 24 hours before assembling. A 1.3+0.1 -0 * * P 1,2,3: Lot No. * * P: Product Type ♦Convection Reflow Profile (Recommended) Temperature (°C) 300 ♦Reliability and Environmental Issues The detailed reliability information can be seen in Reliability and Quality Assurance, which you can download from our web site. SEI’s Yokohama Works, where the devices are manufactured, has been accredited ISO-14001 since 1999. We control the toxic materials in our products in accordance with PRTR regulation. 260 ± 5°C 5sec max 200 Time above 230°C < 45 sec 100 ♦ Lead and Fluoride To realize Pb-free products, Sn-Bi is used for the lead frame plating. Any fluoride that has been determined by the Montreal agreement is not used in the products. Preheat:160°C 90 sec 0 0 60 120 SUMITOMO ELECTRIC 180 240 Time (sec) Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -11- P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦Caution (3) In case you abandon the products, you should obey the related laws and regulations. GaAs FET chips are used in P0120002P. For safety reasons, you should attend to the following matters: (1) Do not put the products in your mouse. (2) Do not make the products into gases or powders, by burning, breaking or chemical treatments. ♦Technical Inquiries are Welcome SEI welcomes technical questions from any customers. The e-mail is [email protected]. You can also contact our regional offices as below. ♦Worldwide Contacts [Europe] [U.S.A.] Sumitomo Electric Europe Ltd. Sumitomo Electric U.S.A., Inc. 220 Centennial Park, Centennial Avenue, 3235 Kifer Road, Suite 150 Elstree, Herts. WD6 3SL U.K. Santa Clara, CA 95051-0815 USA Tel : +44-(0)20-8953-3369, Fax : +44-(0)20-8207-5950 Tel : +1-408-737-8517 URL : http://www.sumielectric.com Fax : +1-408-734-8881 [Asia/Pacific] Sumitomo Electric Industries, Ltd. Photo-Electron Device Division, Electron Devices Department 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa, 244-8588 Japan Tel: +81-(0)45-853-7263, Fax: +81-(0)45-853-1291 URL: http://www.sei.co.jp/GaAsIC/ E-mail: [email protected] Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -12- P0120002P Technical Note 250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦The information in this document is subject to change without notice. Please refer for the most up-to-date information before you start design using SEI’s devices. ♦Any part of this document may not be reproduced or copied. ♦SEI does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of SEI’s products described in this documents. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of SEI or others. ♦Descriptions of circuits and other related information in this document are for illustrative purpose in the examples of the device operation and application. SEI does not assume any responsibility for any losses incurred by customers or third parties arising from the use of the circuits and other related information in this document. ♦SEI’s semi-conductor device products are designed and manufactured for use in the standard communication equipment. Customers that wish to use these products in applications not intended by SEI must contact SEI’ sales representatives in advance. ♦Generally, it is impossible to eliminate completely the defects in semi-conductor products, while SEI has been continually improving the quality and reliability of the products. SEI does not assume any responsibility for any losses incurred by customers or third parties by or arising from the use of SEI’s semi-conductor products. Customers are to incorporate sufficient safety measures in the design such as redundancy, fire-containment and anti-failure features. Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -13-