EUDYNA P0120002P

P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
♦Features
SUMITOMO ELECTRIC
♦Functional Diagram
· Up to 2.7 GHz frequency band
· Beyond +22 dBm output power
· Up to +41dBm Output IP3
· High Drain Efficiency
· 15dB Gain at 2.1GHz
· SOT-89 SMT Package (Pb-free)
· Low Noise Figure
Pin No.
1
2, 4
3
4
Function
Input/Gate
Ground
Output/Drain
1
♦Ordering Information
♦Applications
· Wireless communication system
· Cellular, PCS, PHS, W-CDMA, WLAN
Part No
Description
P0120002P
GaAs Power FET
2.11-2.17GHz
Application Circuit
1000
KP022J
♦Description
2
Number
of devices
1
3
Container
7” Reel
Anti-static
Bag
♦Absolute Maximum Ratings (@Tc=25°C)
P0120002P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
Parameter
Symbol
Value
Units
Drain-Source Voltage
Vds
8
V
Gate-Source Voltage
Vgs
-4
V
Drain Current
Ids
Idss
--RF Input Power
(*)
Pin
13
dBm
(continuous)
Power Dissipation
Pt
1.7
W
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
- 40 to +125
°C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
♦Electrical Specifications (@Tc=25°C)
Parameter
DC
Values
Typ.
Max.
Vds=3V, Vg=0V
---
---
300
mA
gm
Vds=6V, Ids=100mA
90
---
---
mS
Vp
Vds=6V, Ids=10mA
- 3.0
---
- 1.7
V
|Vgs0|
Igso= - 10µA
3.0
---
---
V
Rth
Channel-Case
---
---
60
°C/W
2.7
GHz
Test Conditions
Saturated Drain Current
Idss
Transconductance
Pinchoff Voltage
Gate-Source Breakdown Voltage
Thermal Resistance
RF
Min.
Symbol
Frequency
Output Power
@ 1dB Gain Compression
f
P1dB
Small Signal Gain
G
Output IP3
IP3
Power Added Efficiency
ηadd
Vds=6V
Ids=80mA
f=2.1GHz
---
24
---
dBm
---
15
---
dB
---
41
---
dBm
---
50
---
%
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-1-
Units
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
♦Typical Characteristics
Power Derating Curve
2
1
0
0
50
100
150
Transfer Curve
400
Drain Current (mA)
Total Power Dispation (W)
3
300
-0.5V
200
-1.0V
100
0
200
Vgs=0V
-1.5V
-2.0V
0
2
4
Tc (°C)
6
Vds (V)
♦S-parameters (Typical Data)
90
5
13
0.4
3 .0
4 .0
5 .0
0 .2
Scale for |S12|
2.4GHz
0.04
Scale for |S21|
0
.0
-2
-1
35
-3.
-1.0
5
-4
- 0.8
0.02
-90
-0.
6
0
- 4.
0
-5.0
S22
1.2GHz
2.4GHz
-10 .0
1.2GHz
2.4GHz
S11
S12
0
-180
-0.2
2.4GHz
1.2GHz
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
S21
4.0
2.0
1 0.0
.4
-0
6.0
45
1.2GHz
2 .0
0 .6
0 .8
1.0
Tc=25°C, Vds=6V, Ids=100mA, Common Source, Zo=50Ω (Calibrated to device leads)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-2-
0.06
0
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
90
1.2GHz
5
13
0 .4
3 .0
6.0
S21
4.0
4 .0
5 .0
2.4GHz
2.0
1.2GHz
0 .2
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
Scale for |S12|
1.2GHz
-4.
0
- 5.0
0
-1.0
-0.8
Ids=100mA Freq(GHz) S11 M ag
0.04
2.4GHz 0
0.06
-90
-0.
6
-2.
0
1.2GHz
0.02
5
-4
.4
-0
-1
35
S22
-3.
S11
0
S12
- 10 .0
2.4GHz
Ids=80mA
0
-180
2.4GHz
Scale for |S21|
0
0.2
1 0.0
- 0.2
45
2 .0
0 .6
0 .8
1.0
Tc=25°C, Vds=6V, Ids=80mA, Common Source, Zo=50Ω (Calibrated to device leads)
S11 Ang
S21 M ag
S21 Ang
S12 M ag
S12 Ang
S22 M ag
S22 Ang
1.2
0.861
-102.8
6.088
107.4
0.037
37.7
0.463
-40.9
1.4
0.842
-117.4
5.659
97.5
0.039
31.5
0.442
-45.9
1.6
0.830
-130.3
5.264
88.5
0.041
25.8
0.423
-50.0
1.8
0.820
-141.7
4.892
80.2
0.043
20.7
0.412
-53.4
2.0
0.810
-152.1
4.592
72.4
0.044
16.2
0.398
-58.1
2.2
0.801
-161.6
4.350
64.8
0.046
11.5
0.380
-62.1
2.4
0.789
-171.1
4.139
57.3
0.048
6.4
0.360
-66.0
S11 Ang
S21 M ag
S21 Ang
S12 M ag
S12 Ang
S22 M ag
S22 Ang
Freq(GHz) S11 M ag
1.2
0.861
-102.2
6.066
107.7
0.039
37.2
0.462
-41.9
1.4
0.843
-116.7
5.645
97.8
0.042
30.5
0.440
-47.0
1.6
0.830
-129.6
5.256
88.7
0.044
24.7
0.419
-51.2
1.8
0.820
-141.1
4.885
80.4
0.046
19.5
0.407
-54.7
2.0
0.809
-151.5
4.589
72.6
0.047
14.7
0.392
-59.4
2.2
0.800
-161.0
4.347
65.0
0.049
9.9
0.374
-63.3
2.4
0.788
-170.5
4.138
57.6
0.051
4.8
0.352
-67.2
[Note] You can download the S-parameter list from our web site: www.sei.co.jp/GaAsIC/
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-3-
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=100mA
Ids=80mA
80
80
60
60
IP3
IP3
ηadd
G ain
Pout
0
G ain
20
Pout (dBm)
Gain (dB)
IM3 (dBm)
IP3 (dBm)
IM3/Pout (dBc)
ηadd (%)
20
Pout (dBm)
Gain (dB)
IM3 (dBm)
IP3 (dBm)
IM3/Pout (dBc)
ηadd (%)
ηadd
40
40
IM3
-20
-40
IM3/Pout
0
IM3
-20
-40
-60
-60
-80
-80
IM3/Pout
-100
-100
-20
-15
-10
-5
0
5
10
15
-20
20
-15
-10
Pin (dBm)
-5
0
5
10
15
Pin (dBm)
Device: P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=100mA
Source Matching: Mag 0.71 Ang 131.9°
Load Matching: Mag 0.27 Ang 87.0°
Device: P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=80mA
Source Matching: Mag 0.71 Ang 131.9°
Load Matching: Mag 0.35 Ang 90.9°
[Note] Pout and η add are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=100mA
Id=80mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
ηadd
(%)
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
0.3
5.7
10.8
15.8
20.9
24.6
25.6
15.3
15.7
15.8
15.8
15.9
14.6
10.6
-73.7
-65.9
-61.4
-28.2
0.2
16.1
20.6
-74.0
-71.7
-72.2
-44.0
-20.7
-8.5
-5.0
37.3
41.6
46.8
37.8
29.9
23.6
21.5
98.1
96.4
93.6
88.6
85.9
93.7
105.7
0.2
0.6
2.1
7.0
23.2
49.0
52.5
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
ηadd
(%)
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
0.2
5.6
10.7
15.8
21.1
24.1
25.0
15.2
15.6
15.7
15.8
16.1
14.1
10.0
-76.1
-66.9
-50.5
-24.1
4.1
17.5
19.8
-76.3
-72.5
-61.2
-39.8
-17.0
-6.7
-5.2
38.3
42.0
41.0
35.4
27.7
21.3
21.0
78.5
76.8
74.1
69.5
70.5
80.4
90.0
0.2
0.8
2.6
8.8
29.4
51.6
52.2
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-4-
20
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25°C, Vds=6V, Ids=100mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
[IP3-Lstate]
Γ pout : 0.73∠ 85.8
Source : 0.79 ∠ 160.5
Pout max : 15.75dBm
f1 = 2.1GHz
f2 = 2.101GHz
+j50
+j25
Γ IP 3 : 0.27∠ 87.0
Source : 0.71∠ 131.9
IP3 max : 45.75d Bm
+j50
+j100
15.5
+j100
+j25
15.75
15.25
15.0
40.75
14.75
14.5
25Ω
50Ω
25 Ω
100Ω
-j100
-j25
45.75
44.75
43.75
42.75
41.75
50 Ω
100 Ω
-j100
-j25
-j50
-j50
Tc= 25°C, Vds=6V, Ids=80mA , Pin=-5d Bm
[Pout-Lstate]
f = 2.1GHz
[IP3-Lstate]
Γ pout : 0.74∠ 89.0
Source : 0.79∠ 160.5
Pout max : 16.05dBm
f1 = 2.1GHz
f2 = 2.101GHz
+j50
+j50
+j100
+j25
Γ IP 3 : 0.35∠ 90.9
Source : 0.71∠ 131.9
IP3 max : 40.95d Bm
+j25
16.05
+j100
15.8
15.55
15.3
15.05
14.8
38.45
40.45
40.95
39.95
39.45
38.95
25Ω
50Ω
25Ω
100Ω
-j100
-j25
50Ω
100Ω
-j100
-j25
-j50
-j50
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-5-
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
♦NF Characteristics
1.0
0 .8
2.0
0.6
2.0
10.0
3.0
4.0
5.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
3.0
-2
-1.0
-0 .8
-2
-1.0
-0.8
-1.0
- 0.6
-2
.0
.0
.0
-3 .
0
-0.8
.4
-0
-0 .
6
- 4.0
-5.0
-0 .
6
4.0
5.0
2.0
1.0
0.8
0.6
0.2
0
10.0
3.0
4.0
5.0
2.0
1.0
0.8
1.0
0.8
2.0
0.6
0.8
0.6
0.6
0.4
-3
.0
.4
-0
1.90
-0.2
-3.
0
1.98
- 0.2
10 .0
1.40
-4.
0
- 5.0
.4
-0
4.0
5.0
10.0
1.48
- 10.0
2.10
3.0
- 10.0
0.2
0.4
0.2
0.2
4.0
5.0
10.0
-0 .2
3.0
- 4 .0
-5.0
4.0
5.0
0 .2
0.
4
0
0.
4
3.0
1.60
Ids=60mA
-10.0
1.0
Ids=80mA
0.
4
Ids=100mA
[Note] The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C.
NFmin
(dB)
0.54
0.47
0.73
0.78
0.93
0.96
1.03
1.13
1.60
Γopt
M ag
Ang(deg)
0.67
-94.6
0.64
-59.3
0.51
-29.0
0.52
9.7
0.48
44.0
0.52
77.5
0.52
108.6
0.53
138.0
0.39
170.7
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.51
0.44
0.67
0.71
0.87
0.89
0.96
1.07
1.48
Γopt
M ag
Ang(deg)
0.7
-96.60
0.6
-61.70
0.5
-32.00
0.5
7.60
0.5
40.50
0.5
74.20
0.5
105.70
0.5
134.70
0.4
167.40
Rn/50
0.16
0.24
0.30
0.35
0.29
0.25
0.18
0.10
0.10
Vds=6V
Rn/50
0.14
0.21
0.27
0.33
0.29
0.23
0.17
0.10
0.10
Ids=100mA
Associated
Gain(dB)
23.9
22.4
20.5
19.9
18.9
18.3
17.6
17.1
16.2
Ids=80mA
Associated
Gain(dB)
23.5
22.1
20.2
19.7
18.6
18.0
17.4
16.8
15.9
Vds=6V
Freq. NFmin
(GHz) (dB)
0.4
0.49
0.6
0.41
0.8
0.61
1.0
0.66
1.2
0.82
1.4
0.83
1.6
0.90
1.8
1.00
2.0
1.40
Γopt
M ag
Ang(deg)
0.66
-98.1
0.62
-64.3
0.51
-34.7
0.50
3.7
0.45
36.6
0.49
70.5
0.49
101.8
0.50
130.9
0.35
163.0
Rn/50
0.12
0.18
0.23
0.28
0.23
0.22
0.15
0.10
0.10
Ids=60mA
Associated
Gain(dB)
23.2
21.7
19.9
19.3
18.3
17.7
17.1
16.5
15.6
2.0
1.8
Ids=100mA
1.6
Ids=80mA
1.4
NF (dB)
Vds=6V
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Ids=60mA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0.5
1.0
1.5
Frequency (GHz)
2.0
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-6-
2.5
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
♦Application Circuit: 2110-2170MHz
R2
L1
Z6
Z5
RF in (Rs=50Ω)
Z2
RF out (RL=50Ω)
C5
C1
Z1
C4
Z3
C2
D.U.T
Z4
L2
Z7
L4
C7
L3
C6
R1
C3
Vd
Vg
KP022J
C1
L1
RF in
L2
C2
R1
C5
L3
R2
C7
RF out
L4
C4 C6
C3
Vg
(-0.7∼-2V)
Vd
(+6V)
Ref. Des.
R1
R2
C1
C2
C3
C4
C5
C6
C7
L1
L2
L3
L4
Value
82Ω
470Ω
0.5pF
0.75pF
0.1µF
0.5pF
2200pF
0.1µF
0.75pF
3.3nH
3.3nH
18nH
18nH
Part Number
SUSUMU
RR0816 series
MURATA
GRM18 series
TOKO LL1608
series
20
Ref.
Designator
Z1
Z2
Z3
Z4
Z5
Z6
Z7
S-parameters (dB)
S21
10
0
S11
S22
-10
-20
S12
-30
1.9
2
2.1
Frequency (GHz)
2.2
2.3
Electrical length
@ 2.1GHz (deg)
6.8
11.34
4.08
13.61
8.62
6.38
38.56
All microstrip lines have a line impedance of 50Ω.
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-7-
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
[Typical Performance]
KP022J Application Circuit
Vds=6V, Ids=100mA, Tc=25°C
Frequency characteristics were measured with Pout at 13dBm.
Pout, G ain, IP3, Ids vs Pin
110
30
105
25
100
Ids
95
20
15
Gain
5
-10 -8
-40
IM3
-50
IM5
90
Pout
10
-30
IM3 (dBc)
IM5 (dBc)
IP3
Ids (mA)
Pout (dBm)
Gain (dB)
IP3 (dBm)
35
IM3, Im5 vs Pout
-20
115
40
-6
-4
-60
85
-2
0
2
4
-70
80
6
8
10
Pin (dBm)
36
Vds=6V
IP3 (dBm)
IP3 (dBm)
Vds=5V
Vds=4V
32
15.5
Gain vs Fre quency
Vds=6V
Gain (dB)
Gain (dB)
30
Ids=60mA
2120
2140
2160
Fre quency (MHz)
Vds=4V
2180
Gain vs Fre quency
15.5
Ids=80mA
15.1
14.9
Ids=100mA
Ids=60mA
14.7
14.7
14.5
2100
Ids=80mA
15.3
Vds=5V
14.9
32
26
2100
2180
15.3
15.1
20
Ids=100mA
28
2120
2140
2160
Fre quency (MHz)
18
34
34
31
2100
16
IP3 vs Fre quency
36
33
14
Pout (dBm)
IP3 vs Fre quency
35
12
2120
2140
2160
Fre quency (MHz)
14.5
2100
2180
2120
2140
2160
Fre quency (MHz)
2180
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-8-
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
♦Caution: Power Supply Sequence
SUMITOMO ELECTRIC
+6V
For safe operation, electric power should be supplied in
following sequence. First, the negative voltage should be
applied on the gate, and the voltage should be more negative
than the pinch-off voltage when you turn on the power
supply. Then, drain bias can be applied. Finally, you can turn
on the RF signal.
When turning off the power supply, the sequence should be
(1)RF signal (2)Drain (3)Gate.
R1
R3
Vds
Q1b
Q1a
R4
Gate
Voltage
0V
Drain
Voltage
0V
On
R2
Off
Bias Voltage
R5
Vgs
Bias Voltage
On
More Than 1mS
P0110002P
Application
Circuit
GND
GND
Off
More Than 1mS
Vds
Ids
Q1
R1
R2
R3
R4
R5
♦Bias Circuit
[Passive Biasing]
If you use a fixed bias circuit, you sometimes need to control
the gate bias to get the same Ids, since the devices have some
margin of pinch-off voltage (Vp) variation depending on the
wafer lots. If you employ a fixed Vgs biasing for your
system, you should closely monitor the drain current,
particularly when new wafer lots are introduced.
-5V
+5.9V
100mA
UM T1N (Rohm)
33Ω 1/10W
1.8kΩ 1/10W
1Ω RL series (SUSUM U)
1kΩ 1/10W
1.3kΩ 1/10W
If you used Ids other than 100mA, you can calculate the
resistance values as follows:
[Active Biasing]
We recommend using an active bias circuit, which can
eliminate the influence of Vp variation. An example of an
active bias circuit called “current mirror ” is shown below.
Here, two PNP transistors having the minimum variation of
Ibe characteristics are used. These transistors adjust Vgs by
changing Vds automatically. It will realize the constant
current characteristics, regardless of the temperature.
The circuit should be connected directly in line with where
the voltage supplies would be normally connected with the
application circuit. Of course a matching circuit is required,
but it is not shown in this figure.
R4 set to be 1kΩ
I2:Ic of Q1b
I1: Ic of Q1a
Vbe1: Vbe of Q1a Vbe2: Vbe of Q1b
R1=(+6V-Vds+Vbe2-Vbe1)/I1=(+6V-Vds)/I1
R2=(Vds-Vbe2)/I1
R3=(+6V-Vds)/(Ids+I2)
R5=|-5V-Vgs|/I2
♦Attention to Heat Radiation
In the layout design of the printed circuit board (PCB) on
which the power FETs are attached, the heat radiation to
minimize the device junction temperature should be taken
into account, since it significantly affects the MTTF and RF
performance. In any environment, the junction temperature
should be lower than the absolute maximum rating during
the device operation and it is recommended that the thermal
design has enough margin.
[Note]
In the measurements of RF performance (Pout vs Pin, etc)
using the application circuit described before, the active bias
circuit herein was not utilized. The application circuits were
biased directly from two power supplies.
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-9-
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
The junction temperature can be calculated by the following
formula.
[Using Heat Sink]
If you cannot get the junction temperature lower than the
absolute maximum rating only with the plated thru holes,
then you need to employ the heat sink. Attaching the heat
sink directly under pin 4 of the device improves the thermal
resistance between junction and ambient.
Tjmax=(Vds*Ids-Pout)(Rth+Rboard+Rhs)+Ta
Pout: Output power
Rth: Thermal resistance between channel and case
Rboard: Thermal resistance of PCB
Rhs: Thermal resistance of heat sink
Ta: Ambient temperature
Tjmax: Maximum junction temperature
φ 3 Plated Thru Hole
for 2.5 M achine Screws
Generally, there are two ways of heat radiation. One is the
plated thru hole and the other is the heat sink. Key points will
be illustrated in each case below. Note that no measure
against oscillation is adopted in the figures. In the design of
circuit and layout, you should take stabilizing into account if
necessary.
4-R0.3
0.6
Grand Plane
Grand Plane
Package Outline
φ 3 Plated Thru Hole
φ 5 Soldermask Keepout
φ 5 Soldermask Keepout
φ 0.3 Plated Thru Holes
φ 0.4 Plated Thru Holes
Grand Plane
Keepout
φ 0.4 Plated Thru Holes
for 2.5 M achine Screws
φ 3 Plated Thru Hole
for 2.5 M achine Screws
φ 5 Soldermask
φ 5 Soldermask Keepout
2
2.95
Heatsink
1.9×2.85
(4-R0.3)
[Using Thru Hole]
□Multiple plated thru holes are required directly below the
device.
□Place more than 2 machine screws as close to the ground
pin (pin 4) as possible. The PCB is screwed on the
mounting plate or the heat sink to lower the thermal
resistance of the PCB.
□Lay out a large ground pad area with multiple plated thru
holes around pin 4 of the device.
□The required matching and feedback circuit described in
the application circuit examples should be connected to the
device, although it is not shown in the figure below.
Package Outline
SUMITOMO ELECTRIC
φ 3 Plated Thru Hole
for 2.5 M achine Screws
[Note]
□Ground/thermal vias are critical for the proper device
performance. Drills of the recommended diameters should
be used in the fabrication of vias.
□Add as much copper a s possible to inner and outer layers
near the part to ensure optimal thermal performance.
□Mounting screws can be added near the part to fasten the
board to heat sink. Ensure that the ground/thermal via
region contacts the heat sink.
□Do not put solder mask on the backside of the PCB in the
region where the board contacts the heat sink.
□RF trace width depends upon the PCB material and
construction.
□Use 1 oz. Copper minimum.
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-10-
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
♦Package Drawing
4.5 ± 0.1
1.6+0.15
-0.2
4.0 ± 0.25
2.5 ± 0.1
1.1
± 0.3
0.42 ± 0.06
0.47 ± 0.06
1
[Note]
The reflow profile is different from the one for Sn-Pb
plating.
If you use a soldering iron to attach the devices, please
beware of the followings.
(1) The tip of the iron should be grounded. Or you should
use an iron that is electrostatic discharge proof.
(2) The temperature of the iron tip should be lower than
240°C and the soldering should be completed within 10
seconds.
0.1 ± 0.05
φ 1.6 ± 0.3
♦Attention to ESD
0.4+0.03
-0.02
1.5 ± 0.1
0.42 ± 0.06
Generally, GaAs devices are very sensitive to electrostatic
discharge (ESD). To reduce the ESD damage, please pay
attention to the followings. The devices should be stored
with the electrodes short-circuited by conductive materials.
The workstation and tools should be grounded for safe
dissipation of the static charges in the environment. The
workpeople are to wear anti-static clothing and wrist straps.
For safety reasons, resistance of 10MΩ or so should exist
between workpeople and ground.
3
2
1.5 ± 0.08 1.5 ± 0.08
♦Laser Marking
1.65MAX
B
1 2 3
(0.65)
♦Attention to Moisture
A: 0.67+0 -0.1
B: 0.45
The moisture sensitivity level (MSL) of P0120002P is 3,
which means that the “floor life” is 168 hours below 30°C
with relative humidity (Rh) of 60%.
The devices are usually shipped in moisture-resistant
alumina-laminated packages. After breaking the packages,
they are to be stored under normal temperature and humidity
(5-35°C, 45-75%), with no corrosive gases or dust in the
environment. Assemble the devices within 168 hours after
breaking the package, or you have to bake them at 85°C for
24 hours before assembling.
A
1.3+0.1
-0
* * P
1,2,3: Lot No.
* * P: Product Type
♦Convection Reflow Profile (Recommended)
Temperature (°C)
300
♦Reliability and Environmental Issues
The detailed reliability information can be seen in Reliability
and Quality Assurance, which you can download from our
web site.
SEI’s Yokohama Works, where the devices are manufactured,
has been accredited ISO-14001 since 1999. We control the
toxic materials in our products in accordance with PRTR
regulation.
260 ± 5°C
5sec max
200
Time above 230°C
< 45 sec
100
♦ Lead and Fluoride
To realize Pb-free products, Sn-Bi is used for the lead frame
plating. Any fluoride that has been determined by the
Montreal agreement is not used in the products.
Preheat:160°C
90 sec
0
0
60
120
SUMITOMO ELECTRIC
180
240
Time (sec)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-11-
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
♦Caution
(3) In case you abandon the products, you should obey the
related laws and regulations.
GaAs FET chips are used in P0120002P. For safety reasons,
you should attend to the following matters:
(1) Do not put the products in your mouse.
(2) Do not make the products into gases or powders, by
burning, breaking or chemical treatments.
♦Technical Inquiries are Welcome
SEI welcomes technical questions from any customers. The
e-mail is [email protected]. You can also contact our
regional offices as below.
♦Worldwide Contacts
[Europe]
[U.S.A.]
Sumitomo Electric Europe Ltd.
Sumitomo Electric U.S.A., Inc.
220 Centennial Park, Centennial Avenue,
3235 Kifer Road, Suite 150
Elstree, Herts. WD6 3SL U.K.
Santa Clara, CA 95051-0815 USA
Tel : +44-(0)20-8953-3369, Fax : +44-(0)20-8207-5950
Tel : +1-408-737-8517
URL : http://www.sumielectric.com
Fax : +1-408-734-8881
[Asia/Pacific]
Sumitomo Electric Industries, Ltd.
Photo-Electron Device Division, Electron Devices Department
1, Taya-cho, Sakae-ku, Yokohama, Kanagawa, 244-8588 Japan
Tel: +81-(0)45-853-7263, Fax: +81-(0)45-853-1291
URL: http://www.sei.co.jp/GaAsIC/
E-mail: [email protected]
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-12-
P0120002P
Technical Note
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
♦The information in this document is subject to change without notice. Please refer for the most
up-to-date information before you start design using SEI’s devices.
♦Any part of this document may not be reproduced or copied.
♦SEI does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from the use of SEI’s products described in this documents. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights
of SEI or others.
♦Descriptions of circuits and other related information in this document are for illustrative purpose in the
examples of the device operation and application. SEI does not assume any responsibility for any losses
incurred by customers or third parties arising from the use of the circuits and other related information in
this document.
♦SEI’s semi-conductor device products are designed and manufactured for use in the standard
communication equipment. Customers that wish to use these products in applications not intended by SEI
must contact SEI’ sales representatives in advance.
♦Generally, it is impossible to eliminate completely the defects in semi-conductor products, while SEI has been
continually improving the quality and reliability of the products. SEI does not assume any responsibility for any
losses incurred by customers or third parties by or arising from the use of SEI’s semi-conductor products.
Customers are to incorporate sufficient safety measures in the design such as redundancy, fire-containment and
anti-failure features.
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/
-13-