PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2106TB, µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is for 800 MHz band application, and the µPG2110TB is for 1.5 GHz band application. FEATURES • • • • • • Low operation voltage fRF Low distortion : VDD1 = VDD2 = 3.0 V : 889 to 960 MHz, 1429 to 1453 MHz@Pout = +8 dBm : Padj1 = −60 dBc TYP. @VDD = 3.0 V, Pout = +8 dBm, VAGC = 2.5 V External input and output matching Low operation current : IDD = 25 mA TYP. @VDD = 3.0 V, Pout = +8 dBm, VAGC = 2.5 V External input and output matching Variable gain control function : ∆G = 40 dB TYP. @VAGC = 0.5 to 2.5 V External input and output matching 6-pin super minimold package APPLICATION • Digital Cellular : PDC, IS-136 etc. ORDERING INFORMATION (PLAN) Part Number Package µPG2106TB-E3 µPG2110TB-E3 Supplying Form 6-pin super minimold Carrier tape width is 8 mm. Qty 3 kp/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPG2106TB, µPG2110TB) ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Supply Voltage AGC Control Voltage Symbol Ratings Unit VDD1, VDD2 6.0 V VAGC 6.0 V −8 dBm Input Power Pin Total Power Dissipation Ptot Operating Ambient Temperature TA −30 to +90 °C Storage Temperature Tstg −35 to +150 °C Note 140 mW Note Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85 °C Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs HJ-FET. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14318EJ1V0DS00 (1st edition) Date Published October 1999 N CP(K) Printed in Japan © 1999 µPG2106TB, µPG2110TB [µPG2106TB] PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Connection Pin No. Connection 1 VDD1 4 VAGC 2 GND 5 GND 3 VDD2 & OUT 6 IN Top View 1 2 3 G1V 6 Bottom View 5 4 Top View 3 4 4 3 3 4 2 5 5 2 2 5 1 6 6 1 1 6 RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Supply Voltage Input Power AGC Control Voltage Symbol MIN. TYP. MAX. Unit VDD1, VDD2 +2.7 +3.0 +3.3 V Pin − −18 −10 dBm VAGC 0 − 2.5 V ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VDD1 = VDD2 = +3.0 V, π /4DQPSK modulated signal input, External input and output matching) 2 Parameter Symbol Operating Frequency f Test Conditions MIN. TYP. MAX. Unit 889 − 960 MHz Power Gain Gp Pin = −18 dBm, VAGC = 2.5 V 26 30 − dB Total Current IDD Pout = +8 dBm, VAGC = 2.5 V − 25 35 mA dBc Adjacent Channel Power Leakage 1 Padj1 Pout = +8 dBm, VAGC = 2.5 V ∆f = ±50 kHz, 21 kHz Band Width − −60 −55 Adjacent Channel Power Leakage 2 Padj2 Pout = +8 dBm, VAGC = 2.5 V ∆f = ±100 kHz, 21 kHz Band Width − −70 −65 Variable Gain Range ∆G Pin = −18 dBm, VAGC = 0.5 to 2.5 V 35 40 − dB AGC Control Current IAGC VAGC = 0.5 to 2.5 V − 200 500 µA Preliminary Data Sheet P14318EJ1V0DS00 µPG2106TB, µPG2110TB [µPG2110TB] PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 1 Pin No. Connection Pin No. Connection 1 VDD1 4 VAGC 2 GND 5 GND 3 VDD2 & OUT 6 IN Top View 2 3 G1Y 6 Bottom View 5 4 Top View 3 4 4 3 3 4 2 5 5 2 2 5 1 6 6 1 1 6 RECOMMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Supply Voltage Input Power AGC Control Voltage Symbol MIN. TYP. MAX. Unit VDD1, VDD2 +2.7 +3.0 +3.3 V Pin − −18 −10 dBm VAGC 0 − 2.5 V ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C, VDD1 = VDD2 = +3.0 V, π /4DQPSK modulated signal input, External input and output matching) Parameter Symbol Operating Frequency f Test Conditions MIN. TYP. MAX. Unit 1429 − 1453 MHz Power Gain Gp Pin = −18 dBm, VAGC = 2.5 V 24 27 − dB Total Current IDD Pout = +8 dBm, VAGC = 2.5 V − 25 35 mA dBc Adjacent Channel Power Leakage 1 Padj1 Pout = +8 dBm, VAGC = 2.5 V ∆f = ±50 kHz, 21 kHz Band Width − −60 −55 Adjacent Channel Power Leakage 2 Padj2 Pout = +8 dBm, VAGC = 2.5 V ∆f = ±100 kHz, 21 kHz Band Width − −70 −65 Variable Gain Range ∆G Pin = −18 dBm, VAGC = 0.5 to 2.5 V 35 40 − dB AGC Control Current IAGC VAGC = 0.5 to 2.5 V − 200 500 µA Preliminary Data Sheet P14318EJ1V0DS00 3 µPG2106TB, µPG2110TB [µPG2106TB] EVALUATION CIRCUIT (Preliminary) VDD1 = VDD2 = +3.0 V, f = 925 MHz VDD2 VDD1 C3 L2 C1 L1 OUT C2 1 2 3 G1V 6 L4 5 4 C5 IN C4 L3 Using the NEC Evaluation Board (Preliminary) Symbol C1, C3 4 Value 1 000 pF C2 100 pF C4 27 pF C5 2 pF L1 10 nH L2 39 nH L3 27 nH L4 33 nH R1 1 kΩ R1 Preliminary Data Sheet P14318EJ1V0DS00 VAGC µPG2106TB, µPG2110TB [µPG2106TB] EVALUATION BOARD Epoxy glass: ε = 4.6, t = 0.4 mm, Board Dimension: 38 × 40 mm Vdd1 RF OUT VDD1 OUT C2 L1 C1 L2 C3 Vdd2 VDD2 C5 C4 L4 L3 Preliminary Data Sheet P14318EJ1V0DS00 RF IN VAGC R1 LO IN IN 5 µPG2106TB, µPG2110TB [µPG2110TB] EVALUATION CIRCUIT (Preliminary) VDD1 = VDD2 = +3.0 V, f = 1441 MHz VDD2 VDD1 C3 L1 C1 C6 OUT C2 1 2 3 G1Y 6 L3 5 4 C5 IN C4 L2 Using the NEC Evaluation Board (Preliminary) Symbol Value C1, C3, C5 1 000 pF C2 1.5 pF C4 3 pF C6 2 pF L1 2.7 nH L2, L3 8.2 nH R1 6 R1 1 kΩ Preliminary Data Sheet P14318EJ1V0DS00 VAGC µPG2106TB, µPG2110TB [µPG2110TB] EVALUATION BOARD Polyimide: ε = 4.6, t = 0.4 mm, Board Dimension: 38 × 40 mm VDD1 VDD2 Vdd1 Vdd2 21-091667_1 OUT C2 C1 L1 C6 C3 OUT C4 L2 IN C5 L3 R1 NEC AGC AMP Vagc IN VAGC Preliminary Data Sheet P14318EJ1V0DS00 7 µPG2106TB, µPG2110TB TYPICAL CHARACTERISTICS OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER 30 Output Power Pout (dBm), Total Current IDD (mA) 45 f = 925 MHz, VDD1 = VDD2 = 3.0 V VAGC = 2.5 V 40 π/4DQPSK signal input 20 35 10 IDD 30 0 25 −10 20 −20 −30 Pout 15 −40 10 5 −50 Padj1 −60 0 −5 −35 −30 −25 −20 Input Power Pin (dBm) −15 −70 −5 −10 GAIN vs. AGC CONTROL VOLTAGE 40 f = 925 MHz, VDD1 = VDD2 = 3.0 V Vector Network Analyzer use 30 Gain (dB) 20 10 0 −10 −20 −30 8 0 0.5 1 1.5 2 AGC Control Voltage VAGC (V) Preliminary Data Sheet P14318EJ1V0DS00 2.5 3 Adjacent Channel Power Leakage1 Padj1@∆ f = ±50 kHz (dBc) [µPG2106TB] µPG2106TB, µPG2110TB OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER 0 −10 25 IDD −20 20 −30 15 Pout −40 10 Padj1 −50 5 0 −60 f = 1441 MHz, VDD1 = VDD2 = 3.0 V, VAGC = 2.5 V π/4DQPSK signal input −5 −35 −30 −25 −20 −15 Input Power Pin (dBm) −10 −5 0 −70 GAIN vs. AGC CONTROL VOLTAGE 40 f = 1441 MHz, VDD1 = VDD2 = 3.0 V Vector Network Analyzer use 30 20 Gain (dB) Output Power Pout (dBm), Total Current IDD (mA) 30 Adjacent Channel Power Leakage1 Padj1@∆ f = ±50 kHz (dBc) [µPG2110TB] 10 0 −10 −20 −30 0 0.5 1 1.5 2 AGC Control Voltage VAGC (V) Preliminary Data Sheet P14318EJ1V0DS00 2.5 3 9 µPG2106TB, µPG2110TB PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.15 +0.1 −0 2.1±0.1 1.25±0.1 0.1 MIN. 0.2 +0.1 −0 0 to 0.1 0.65 0.65 0.7 1.3 0.9±0.1 2.0±0.2 10 Preliminary Data Sheet P14318EJ1V0DS00 µPG2106TB, µPG2110TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Note Count: 3, Exposure limit: None IR35-00-3 VPS Package peak temperature: 215 °C or below Time: 40 seconds or less (at 200 °C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Note Exposure limit: None – Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Preliminary Data Sheet P14318EJ1V0DS00 11 µPG2106TB, µPG2110TB CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8