RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Features General Description ■ Single positive-supply operation with low power and shutdown modes The RMPA1965 power amplifier module (PAM) is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. ■ 40% CDMA/WCDMA efficiency at +28 dBm average output power ■ Compact lead-free compliant low-profile package (3.0 x 3.0 x 1.0 mm nominal) ■ Internally matched to 50Ω and DC blocked RF input/output ■ Meets CDMA2000-1XRTT/WCDMA performance requirements ■ Meets HSDPA performance requirement Device Functional Block Diagram (Top View) MMIC 8 Vcc2 Vcc1 1 RF IN 2 INPUT MATCH OUTPUT MATCH Vmode 3 DC BIAS CONTROL 7 RF OUT 6 GND 5 GND Vref 4 (paddle ground on package bottom) ©2005 Fairchild Semiconductor Corporation RMPA1965 Rev. I 1 www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module May 2005 Symbol Parameter Vcc1, Vcc2 Supply Voltages Vref Reference Voltage Value Units 5.0 V 2.6 to 3.5 V Vmode Power Control Voltage 3.5 V Pin RF Input Power +10 dBm TSTG Storage Temperature -55 to +150 °C Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Symbol f Parameter Operating Frequency Min Typ 1850 Max Units 1910 MHz Comments CDMA Operation SSg Small-Signal Gain 26 dB Po = 0dBm Gp Power Gain 27 24 dB dB Po = +28 dBm; Vmode = 0V Po = +16dBm; Vmode ≥ 2.0V Po Linear Output Power PAEd PAEd (digital) @ +28dBm Itot 28 16 dBm dBm Vmode = 0V Vmode ≥ 2.0V 40 % Vmode = 0V PAEd (digital) @ +16dBm 9 % Vmode ≥ 2.0V PAEd (digital) @ +16dBm 21 % Vmode ≥ 2.0V, Vcc = 1.4V High Power Total Current 460 mA Po = +28dBm, Vmode = 0V Low Power Total Current 120 mA Po = +16dBm, Vmode ≥ 2.0V Adjacent Channel Power Ratio IS-95 ACPR1 ±1.25MHz Offset -50 -52 dBc dBc Po = +28dBm; Vmode = 0V Po = +16dBm; Vmode ≥ 2.0V ACPR2 ±2.25MHz Offset -60 -68 dBc dBc Po = +28dBm; Vmode = 0V Po = +16dBm; Vmode ≥ 2.0V General Characteristics VSWR Input Impedance NF Noise Figure Rx No 2fo-5fo S Tc 2.0:1 4 Receive Band Noise Power dB -139 dBm/Hz Po ≤ +28dBm; 1930 to 1990MHz -50 dBc Po ≤ +28dBm Spurious Outputs2, 3 -60 dBc Load VSWR ≤ 5.0:1 Ruggedness w/ Load Mismatch3 10:1 Harmonic Suppression3 Case Operating Temperature -30 85 No permanent damage. °C DC Characteristics Iccq Quiescent Current 45 mA Vmode ≥ 2.0V Iref Reference Current 5 mA Po ≤ +28dBm Icc(off) Shutdown Leakage Current 1 µA No applied RF signal. 5 Notes: 1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V, f = 1880MHz and load VSWR ≤ 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design. 2 RMPA1965 Rev. I www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Absolute Ratings1 High Power Mode (Vcc = 3.4V, Vref = 2.85V, Vmode = 0V) Frequency dependency (Pout = 28dBm) RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 28dBm PAE (%) 32 31 30 29 28 27 26 25 24 23 22 1850 1880 1910 45 44 43 42 41 40 39 38 37 36 35 1850 1880 1910 Frequency (MHz) Frequency (MHz) RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 28dBm RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 28dBm -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 1850 ACPR2 (dBc) ACPR1 (dBc) Gain (dB) RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Pout = 28dBm 1880 1910 -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 1850 1880 Frequency (MHz) 1910 Frequency (MHz) Pout dependency (Frequency = 1880MHz) RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1880MHz 32 31 30 29 28 27 26 25 24 23 22 PAE (%) Gain (dB) RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1880MHz 0 4 8 12 16 20 24 50 45 40 35 30 25 20 15 10 5 0 28 0 4 8 12 16 20 24 28 Pout (dBm) RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1880MHz RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, Freq = 1880MHz -40 -50 -45 -50 -55 -60 ACPR2 (dBc) ACPR1 (dBc) Pout (dBm) -55 -60 -65 -70 -75 -80 -70 -75 -80 -85 -90 0 4 8 12 16 20 24 28 0 Pout (dBm) 4 8 12 16 20 24 28 Pout (dBm) 3 RMPA1965 Rev. I -65 www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Performance Data Low Power Mode (Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm) RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 1850 PAE (%) Gain (dB) 32 31 30 29 28 27 26 25 24 23 22 1880 15 14 13 12 11 10 9 8 7 6 5 1850 1910 Frequency (MHz) ACPR1 (dBc) ACPR2 (dBc) 1880 1910 RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm RMPA1965 3x3 US-PCS PAM Vcc = 3.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 1850 1880 Frequency (MHz) 1910 -60 -62 -64 -66 -68 -70 -72 -74 -76 -78 -80 1850 Frequency (MHz) 1880 1910 Frequency (MHz) Low Power Mode (Vcc=1.4V, Vref=2.85V, Vmode=2V, Pout=16dBm) RMPA1965 3x3 US-PCS PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 28 27 26 25 24 23 22 21 20 19 18 1850 PAE (%) Gain (dB) RMPA1965 3x3 US-PCS PAM Vcc=1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm 1880 1910 25 24 23 22 21 20 19 18 17 16 15 1850 1880 1910 RMPA1965 3x3 US-PCS PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm RMPA1965 3x3 US-PCS PAM Vcc = 1.4V, Vref = 2.85V, Vmode = 2V, Pout = 16dBm -50 -52 -54 -56 -58 -60 -62 -64 -66 -68 -70 1850 ACPR2 (dBc) Frequency (MHz) ACPR1 (dBc) Frequency (MHz) 1880 1910 Frequency (MHz) 1880 1910 Frequency (MHz) 4 RMPA1965 Rev. I -60 -62 -64 -66 -68 -70 -72 -74 -76 -78 -80 1850 www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Performance Data In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a typical ACPR1 of –52dBc and ACPR2 of less than –61dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power. Recommended Operating Conditions Symbol Parameter Min Typ Units f Operating Frequency 1910 MHz Vcc1, Vcc2 Supply Voltage 3.0 3.4 4.2 V Vref Reference Voltage (Operating) (Shutdown) 2.7 0 2.85 3.1 0.5 V V Bias Control Voltage (Low-Power) (High-Power) 1.8 0 2.0 3.0 0.5 V V +28 +16 dBm dBm +85 °C Vmode Pout Tc 1850 Max Linear Output Power (High-Power) (Low-Power) Case Operating Temperature -30 DC Turn-On Sequence 1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16 dBm) Low-Power: Vmode = 2V (Pout < 16 dBm) 5 RMPA1965 Rev. I www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Efficiency Improvement Applications 1965 XYTT Z Materials List Qty Item No. 1 1 2 7 Part Number Description Vendor G657691-1 V1 PC Board 2 #142-0701-841 SMA Connector Johnson 3 #2340-5211TN Terminals 3M Ref 4 3 5 3 5 (Alt) 2 6 1 7 1 7 (Alt) A/R A/R Fairchild Assembly, RMPA1965 Fairchild GRM39X7R102K50V 1000pF Capacitor (0603) Murata ECJ-1VB1H102K 1000pF Capacitor (0603) Panasonic C3216X5R1A335M 3.3µF Capacitor (1206) TDK GRM39Y5V104Z16V 0.1µF Capacitor (0603) Murata ECJ-1VB1C104K 0.1µF Capacitor (0603) Panasonic 8 SN63 Solder Paste Indium Corp. 9 SN96 Solder Paste Indium Corp. Evaluation Board Schematic 3.3 µF 1 Vcc1 2 50 ohm TRL 3 Vmode Vref 0.1 µF 7 50 ohm TRL SMA2 RF OUT 9 (package base) 6 RMPA1965 Rev. I Vcc2 5,6 4 1000 pF 3.3 µF 8 1965 XYTT Z SMA1 RF IN 1000 pF 1000 pF www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Evaluation Board Layout I/O 1 INDICATOR TOP VIEW 8 1 3 1965 XYTT Z 2 3.00 +.100 –.050 mm SQ. 7 6 1 XY 965 T Z T 5 4 FRONT VIEW 1.10mm MAX. 4X R.25mm 4 5 3 6 2 BACK SIDE SOLDER MASK 0.40mm 1 2.60mm 2 7 9 1 SEE DETAIL A 1.00mm 1.00mm 0.40mm 0.10mm 0.40mm 0.10mm 8 DETAIL A TYP. 0.20mm BOTTOM VIEW Signal Descriptions Pin No. Symbol Description 1 Vcc1 Supply Voltage to Input Stage 2 RF In RF Input Signal 3 Vmode 4 Vref Reference Voltage 5 GND Ground 6 GND Ground 7 RF Out 8 Vcc2 High-Power/Low-Power Mode Control RF Output Signal Supply Voltage to Output Stage 7 RMPA1965 Rev. I www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Package Outline • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 1- 2°C/sec. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120–150 seconds at 150°C. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215– 220°C, with a maximum limit of 225°C. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Device Usage: Fairchild recommends the following procedures prior to assembly. • Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed. • Assemble the dry-baked devices within 7 days of removal from the oven. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C Recommended Solder Reflow Profile 240 10 SEC 220 200 183°C 180 160 140 DEG (°C) 120 100 1°C/SEC SOAK AT 150°C FOR 60 SEC 80 45 SEC (MAX) ABOVE 183°C 1°C/SEC 60 40 20 0 0 60 120 180 240 300 TIME (SEC) 8 RMPA1965 Rev. I www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Applications Information The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 9 RMPA1965 Rev. I www.fairchildsemi.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module TRADEMARKS