Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Tvj = 25 °C VCES 600 V TC = 80 °C IC,nom. 10 TC = 25 °C IC 17 A A ICRM 20 A Ptot 76 W VGES +20 V IF 10 A IFRM 20 A I²t 12 A²s VISOL 2,5 kV tp= 1ms, TC = 80 °C Tc= 25°C, Transistor Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current tp= 1ms Grenzlastintegral I²t value VR= 0V, tp= 10ms, Tvj= 125°C Isolations Prüfspannung insulation test voltage RMS, f= 50Hz, t= 1min Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung collector emitter saturation voltage VGE= 15V, Tvj= 25°C, IC= IC,nom VGE= 15V, Tvj= 125°C, IC= IC,nom min. typ. max. - 1,95 2,55 V - 2,20 - V VGE(th) 4,5 5,5 6,5 V VCEsat Gate Schwellenspannung gate threshold voltage VCE= VGE, Tvj= 25°C, IC= Gateladung gate charge VGE= -15V...+15V QG - 0,05 - µC Eingangskapazität input capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cies - 0,45 - nF Rückwirkungskapazität reverse transfer capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cres - 0,04 - nF Kollektor Emitter Reststrom collector emitter cut off current VCE = ICES - - 5 mA Gate Emitter Reststrom gate emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25°C IGES - - 400 nA prepared by: P. Kanschat date of publication: approved: M. Hierholzer revision: 0,4 mA 600 V, VGE= 0V, Tvj= 25°C 2.0 1 (8) 2003-01-24 Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (induktive Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) IC= 10 A, VCC = VGE = ±15V, RG = 27 Ω, Tvj= 25°C VGE = ±15V, RG = 27 Ω, Tvj= 125°C IC= 10 A, VCC = 27 Ω, Tvj= 25°C VGE = ±15V, RG = 27 Ω, Tvj= 125°C 10 A, VCC = 27 Ω, Tvj= 25°C VGE = ±15V, RG = 27 Ω, Tvj= 125°C 10 A, VCC = 27 Ω, Tvj= 25°C VGE = ±15V, RG = 27 Ω, Tvj= 125°C A, VCC = Einschaltverlustenergie pro Puls turn on energy loss per pulse IC= Ausschaltverlustenergie pro Puls turn off energy loss per pulse IC= Kurzschlussverhalten SC data tP ≤ 10µsec, VGE ≤ 15V, Tvj= 125°C, 300 V RG = 27 Ω, Tvj = 125°C, Lσ = 25 nH 10 A, VCC = 300 V RG = 27 Ω, Tvj = 125°C, Lσ = 25 nH VCC = 360 V, VCEmax=VCES -LσCE ·|di/dt| Modulinduktivität stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip td,on - 20 - ns - 21 - ns tr - 7 - ns - 8 - ns td,off - 80 - ns - 110 - ns - 18 - ns - 25 - ns Eon - 0,25 - mJ Eoff - 0,30 - mJ ISC - 40 - A LσCE - 25 - nH RCC´/EE´ - 8 - mΩ - 1,85 2,25 V - 1,90 - V - 26 - A - 27 - A - 0,55 - µC - 0,95 - µC - 0,15 - mJ - 0,2 - mJ 300 V VGE = ±15V, RG = 10 max. 300 V VGE = ±15V, RG = IC= typ. 300 V VGE = ±15V, RG = IC= min. 300 V Tc= 25°C tf Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Ausschaltenergie pro Puls reverse recovery energy IF = 10 A, VGE= 0V, Tvj= 25°C IF = 10 A, VGE= 0V, Tvj= 125°C IF = 10 A, -diF/dt = 1500 A/µs VR = 300 V, VGE= -10V, Tvj= 25°C VR = 300 V, VGE= -10V, Tvj= 125°C IF = 10 A, -diF/dt = 300 V, VGE= -10V, Tvj= 25°C VR = 300 V, VGE= -10V, Tvj= 125°C 10 A, -diF/dt = Qr 1500 A/µs VR = 300 V, VGE= -10V, Tvj= 25°C VR = 300 V, VGE= -10V, Tvj= 125°C 2 (8) IRM 1500 A/µs VR = IF = VF Erec Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Charakteristische Werte / characteristic values NTC-Widerstand / NTC-thermistor min. typ. max. R25 - 5 - kΩ ∆R/R -5 - 5 % P25 - - 20 mW B25/50 - 3375 - K - - 1,65 K/W - - 3,80 K/W - 2,20 - K/W - 4,50 - K/W - 0,70 - K/W - 1,00 - K/W Tvjmax - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Nennwiderstand rated resistance Tc= 25°C Abweichung von R100 deviation of R100 Tc= 100°C, R100= 493Ω Verlustleistung power dissipation Tc= 25°C B-Wert B-value R2= R1 exp[B(1/T2 - 1/T1)] Thermische Eigenschaften / thermal properties Innerer Wärmewiderstand; DC thermal resistance, junction to case; DC Transistor Wechselr. / transistor inverter Wärmewiderstand; DC thermal resistance, junction to heat sink; DC Transistor Wechselr. / transistor inverter Diode Wechselrichter / diode inverter Diode Wechselrichter / diode inverter RthJC RthJH λ Paste = 1 W/m*K / λ grease = 1 W/m*K Übergangs-Wärmewiderstand; DC thermal resistance, case to heat sink; DC Transistor Wechselr. / transistor inverter Diode Wechselrichter / diode inverter RthCH λ Paste = 1 W/m*K / λ grease = 1 W/m*K Höchstzulässige Sperrschichttemp. maximum junction temperature Mechanische Eigenschaften / mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 Anpresskraft pro Feder mounting force per clamp F 20..50 N Gewicht weight G 25 g 10,5 mm 5 mm 9 mm 5 mm Kriechstrecke creepage distance Anschluss - Kühlkörper terminal to heat sink Anschluss - Anschluss terminal to terminal Luftstrecke clearance distance Anschluss - Kühlkörper terminal to heat sink Anschluss - Anschluss terminal to terminal 3 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Ausgangskennlinie (typisch) output characteristic (typical) IC= f(VCE) VGE= 15V Tvj = 25°C 20 Tvj = 125°C IC [A] 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) output characteristic (typical) IC= f(VCE) Tvj= 125°C VGE = 20V 20 VGE = 15V VGE = 12V VGE = 10V 15 VGE = 9V IC [A] VGE = 8V 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 4 (8) 3,0 3,5 4,0 4,5 5,0 Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Übertragungscharakteristik (typisch) IC= f(VGE) transfer characteristic (typical) VCE= 20V 20 Tvj = 25°C Tvj = 125°C IC [A] 15 10 5 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlasskennlinie der Inversdiode (typisch) IF= f(VF) forward characteristic of inverse diode (typical) 20 Tvj = 25°C Tvj = 125°C IF [A] 15 10 5 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 VF [V] 5 (8) 1,6 1,8 2,0 2,2 2,4 2,6 2,8 Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Schaltverluste (typisch) switching losses (typical) Eon = f(IC), Eoff = f(IC), Erec = f(IC) VGE= ±15V, RGon=RGoff= 27Ω, VCE= 300V, Tvj= 125°C Eon 1 Eoff Erec E [mJ] 0,75 0,5 0,25 0 0 5 10 15 20 IC [A] Schaltverluste (typisch) switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE= ±15V, IC= 10A, VCE= 300V, Tvj= 125°C Eon 1 Eoff Erec 0,8 E [mJ] 0,6 0,4 0,2 0 0 25 50 75 100 125 150 RG [Ω] 6 (8) 175 200 225 250 275 Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Transienter Wärmewiderstand transient thermal impedance ZthJH = f (t) ZthJH(K/W) 10,00 1,00 Zth:IGBT Zth:Diode 0,10 0,001 0,01 i ri [K/kW]: IGBT τi [s]: IGBT ri [K/kW]: Diode τi [s]: Diode 0,1 t (s) 1 270,0 0,000232 192,0 0,000307 1 10 2 3 4 900,0 2520,0 810,0 0,00215 0,09946 0,12318 640,0 1792,0 576,0 0,00484 0,10644 0,14203 Sicherer Arbeitsbereich (RBSOA) reverse bias safe operation area (RBSOA) VGE=15V, Tj=125°C, RG = 27 Ω 30 IC, Chip IC, Modul IC [A] 20 10 0 0 200 400 VCE [V] 7 (8) 600 Technische Information / technical information IGBT-Module IGBT-Modules FS10R06XL4 vorläufige Daten preliminary data Schaltbild circuit diagram ϑ Gehäusemaße package outline Bohrplan drilling layout Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. 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