EUPEC FS10R06XL4

Technische Information / technical information
IGBT-Module
IGBT-Modules
FS10R06XL4
vorläufige Daten
preliminary data
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt Verlustleistung
total power dissipation
Tvj = 25 °C
VCES
600
V
TC =
80 °C
IC,nom.
10
TC =
25 °C
IC
17
A
A
ICRM
20
A
Ptot
76
W
VGES
+20
V
IF
10
A
IFRM
20
A
I²t
12
A²s
VISOL
2,5
kV
tp= 1ms, TC =
80 °C
Tc= 25°C, Transistor
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
tp= 1ms
Grenzlastintegral
I²t value
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter saturation voltage
VGE= 15V, Tvj= 25°C, IC= IC,nom
VGE= 15V, Tvj= 125°C, IC= IC,nom
min.
typ.
max.
-
1,95
2,55
V
-
2,20
-
V
VGE(th)
4,5
5,5
6,5
V
VCEsat
Gate Schwellenspannung
gate threshold voltage
VCE= VGE, Tvj= 25°C, IC=
Gateladung
gate charge
VGE= -15V...+15V
QG
-
0,05
-
µC
Eingangskapazität
input capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Cies
-
0,45
-
nF
Rückwirkungskapazität
reverse transfer capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Cres
-
0,04
-
nF
Kollektor Emitter Reststrom
collector emitter cut off current
VCE =
ICES
-
-
5
mA
Gate Emitter Reststrom
gate emitter leakage current
VCE= 0V, VGE= 20V, Tvj= 25°C
IGES
-
-
400
nA
prepared by: P. Kanschat
date of publication:
approved: M. Hierholzer
revision:
0,4 mA
600 V, VGE= 0V, Tvj= 25°C
2.0
1 (8)
2003-01-24
Technische Information / technical information
IGBT-Module
IGBT-Modules
FS10R06XL4
vorläufige Daten
preliminary data
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Einschaltverzögerungszeit (induktive Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (induktive Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
IC=
10
A, VCC =
VGE = ±15V, RG =
27 Ω, Tvj= 25°C
VGE = ±15V, RG =
27 Ω, Tvj= 125°C
IC=
10
A, VCC =
27 Ω, Tvj= 25°C
VGE = ±15V, RG =
27 Ω, Tvj= 125°C
10
A, VCC =
27 Ω, Tvj= 25°C
VGE = ±15V, RG =
27 Ω, Tvj= 125°C
10
A, VCC =
27 Ω, Tvj= 25°C
VGE = ±15V, RG =
27 Ω, Tvj= 125°C
A, VCC =
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
IC=
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
IC=
Kurzschlussverhalten
SC data
tP ≤ 10µsec, VGE ≤ 15V, Tvj= 125°C,
300 V
RG = 27 Ω, Tvj = 125°C, Lσ = 25 nH
10
A, VCC =
300 V
RG = 27 Ω, Tvj = 125°C, Lσ = 25 nH
VCC = 360 V, VCEmax=VCES -LσCE ·|di/dt|
Modulinduktivität
stray inductance module
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
td,on
-
20
-
ns
-
21
-
ns
tr
-
7
-
ns
-
8
-
ns
td,off
-
80
-
ns
-
110
-
ns
-
18
-
ns
-
25
-
ns
Eon
-
0,25
-
mJ
Eoff
-
0,30
-
mJ
ISC
-
40
-
A
LσCE
-
25
-
nH
RCC´/EE´
-
8
-
mΩ
-
1,85
2,25
V
-
1,90
-
V
-
26
-
A
-
27
-
A
-
0,55
-
µC
-
0,95
-
µC
-
0,15
-
mJ
-
0,2
-
mJ
300 V
VGE = ±15V, RG =
10
max.
300 V
VGE = ±15V, RG =
IC=
typ.
300 V
VGE = ±15V, RG =
IC=
min.
300 V
Tc= 25°C
tf
Charakteristische Werte / characteristic values
Diode Wechselrichter / diode inverter
Durchlassspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Ausschaltenergie pro Puls
reverse recovery energy
IF =
10 A, VGE= 0V, Tvj= 25°C
IF =
10 A, VGE= 0V, Tvj= 125°C
IF =
10
A, -diF/dt =
1500 A/µs
VR =
300 V, VGE= -10V, Tvj= 25°C
VR =
300 V, VGE= -10V, Tvj= 125°C
IF =
10
A, -diF/dt =
300 V, VGE= -10V, Tvj= 25°C
VR =
300 V, VGE= -10V, Tvj= 125°C
10
A, -diF/dt =
Qr
1500 A/µs
VR =
300 V, VGE= -10V, Tvj= 25°C
VR =
300 V, VGE= -10V, Tvj= 125°C
2 (8)
IRM
1500 A/µs
VR =
IF =
VF
Erec
Technische Information / technical information
IGBT-Module
IGBT-Modules
FS10R06XL4
vorläufige Daten
preliminary data
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
min.
typ.
max.
R25
-
5
-
kΩ
∆R/R
-5
-
5
%
P25
-
-
20
mW
B25/50
-
3375
-
K
-
-
1,65
K/W
-
-
3,80
K/W
-
2,20
-
K/W
-
4,50
-
K/W
-
0,70
-
K/W
-
1,00
-
K/W
Tvjmax
-
-
150
°C
Betriebstemperatur
operation temperature
Top
-40
-
125
°C
Lagertemperatur
storage temperature
Tstg
-40
-
125
°C
Nennwiderstand
rated resistance
Tc= 25°C
Abweichung von R100
deviation of R100
Tc= 100°C, R100= 493Ω
Verlustleistung
power dissipation
Tc= 25°C
B-Wert
B-value
R2= R1 exp[B(1/T2 - 1/T1)]
Thermische Eigenschaften / thermal properties
Innerer Wärmewiderstand; DC
thermal resistance, junction to case; DC
Transistor Wechselr. / transistor inverter
Wärmewiderstand; DC
thermal resistance, junction to heat sink; DC
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
Diode Wechselrichter / diode inverter
RthJC
RthJH
λ Paste = 1 W/m*K / λ grease = 1 W/m*K
Übergangs-Wärmewiderstand; DC
thermal resistance, case to heat sink; DC
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
RthCH
λ Paste = 1 W/m*K / λ grease = 1 W/m*K
Höchstzulässige Sperrschichttemp.
maximum junction temperature
Mechanische Eigenschaften / mechanical properties
Innere Isolation
internal insulation
Al2O3
CTI
comperative tracking index
225
Anpresskraft pro Feder
mounting force per clamp
F
20..50
N
Gewicht
weight
G
25
g
10,5
mm
5
mm
9
mm
5
mm
Kriechstrecke
creepage distance
Anschluss - Kühlkörper
terminal to heat sink
Anschluss - Anschluss
terminal to terminal
Luftstrecke
clearance distance
Anschluss - Kühlkörper
terminal to heat sink
Anschluss - Anschluss
terminal to terminal
3 (8)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FS10R06XL4
vorläufige Daten
preliminary data
Ausgangskennlinie (typisch)
output characteristic (typical)
IC= f(VCE)
VGE= 15V
Tvj = 25°C
20
Tvj = 125°C
IC [A]
15
10
5
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
VCE [V]
Ausgangskennlinienfeld (typisch)
output characteristic (typical)
IC= f(VCE)
Tvj= 125°C
VGE = 20V
20
VGE = 15V
VGE = 12V
VGE = 10V
15
VGE = 9V
IC [A]
VGE = 8V
10
5
0
0,0
0,5
1,0
1,5
2,0
2,5
VCE [V]
4 (8)
3,0
3,5
4,0
4,5
5,0
Technische Information / technical information
IGBT-Module
IGBT-Modules
FS10R06XL4
vorläufige Daten
preliminary data
Übertragungscharakteristik (typisch)
IC= f(VGE)
transfer characteristic (typical)
VCE= 20V
20
Tvj = 25°C
Tvj = 125°C
IC [A]
15
10
5
0
5
6
7
8
9
10
11
12
13
VGE [V]
Durchlasskennlinie der Inversdiode (typisch)
IF= f(VF)
forward characteristic of inverse diode (typical)
20
Tvj = 25°C
Tvj = 125°C
IF [A]
15
10
5
0
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
VF [V]
5 (8)
1,6
1,8
2,0
2,2
2,4
2,6
2,8
Technische Information / technical information
IGBT-Module
IGBT-Modules
FS10R06XL4
vorläufige Daten
preliminary data
Schaltverluste (typisch)
switching losses (typical)
Eon = f(IC), Eoff = f(IC), Erec = f(IC)
VGE= ±15V, RGon=RGoff= 27Ω, VCE= 300V, Tvj= 125°C
Eon
1
Eoff
Erec
E [mJ]
0,75
0,5
0,25
0
0
5
10
15
20
IC [A]
Schaltverluste (typisch)
switching losses (typical)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
VGE= ±15V, IC= 10A, VCE= 300V, Tvj= 125°C
Eon
1
Eoff
Erec
0,8
E [mJ]
0,6
0,4
0,2
0
0
25
50
75
100
125
150
RG [Ω]
6 (8)
175
200
225
250
275
Technische Information / technical information
IGBT-Module
IGBT-Modules
FS10R06XL4
vorläufige Daten
preliminary data
Transienter Wärmewiderstand
transient thermal impedance
ZthJH = f (t)
ZthJH(K/W)
10,00
1,00
Zth:IGBT
Zth:Diode
0,10
0,001
0,01
i
ri [K/kW]: IGBT
τi [s]: IGBT
ri [K/kW]: Diode
τi [s]: Diode
0,1
t (s)
1
270,0
0,000232
192,0
0,000307
1
10
2
3
4
900,0
2520,0
810,0
0,00215
0,09946
0,12318
640,0
1792,0
576,0
0,00484
0,10644
0,14203
Sicherer Arbeitsbereich (RBSOA)
reverse bias safe operation area (RBSOA)
VGE=15V, Tj=125°C, RG = 27 Ω
30
IC, Chip
IC, Modul
IC [A]
20
10
0
0
200
400
VCE [V]
7 (8)
600
Technische Information / technical information
IGBT-Module
IGBT-Modules
FS10R06XL4
vorläufige Daten
preliminary data
Schaltbild
circuit diagram
ϑ
Gehäusemaße
package outline
Bohrplan
drilling layout
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
8 (8)
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