Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 600 V Tc= 80°C IC,nom. 50 A Tc= 25°C IC 75 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP= 1ms, Tc= 80°C ICRM 100 A Gesamt-Verlustleistung total power dissipation Tc= 25°C, Transistor Ptot 280 W VGES +/- 20V V IF 50 A IFRM 100 A I2t 450 A2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP= 1ms Grenzlastintegral der Diode 2 I t - value, Diode VR= 0V, tp= 10ms, Tvj= 125°C Isolations-Prüfspannung insulation test voltage RMS, f= 50Hz, t= 1min. Charakteristische Werte / Characteristic values min. typ. max. - 1,95 2,45 V - 2,20 - V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC= 50A, VGE= 15V, Tvj= 25°C IC= 50A, VGE= 15V, Tvj= 125°C VCE sat Gate-Schwellenspannung gate threshold voltage IC= 1,0mA, VCE= VGE, Tvj= 25°C Eingangskapazität input capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cies - 2,2 - nF Rückwirkungskapazität reverse transfer capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cres - 0,2 - nF - 1 500 µA - 1 - mA - - 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE= 600V, VGE= 0V, Tvj= 25°C VCE= 600V, VGE= 0V, Tvj= 125°C Gate-Emitter Reststrom gate-emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25°C prepared by: Andreas Vetter date of publication: 2000-04-26 approved by: Michael Hornkamp revision: 1 1 (8) ICES IGES BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Charakteristische Werte / Characteristic values min. typ. max. - 40 - ns - 42 - ns - 9 - ns - 10 - ns - 120 - ns - 130 - ns - 12 - ns - 21 - ns Eon - 0,5 - mJ Eoff - 1,0 - mJ ISC - 225 - A LσCE - 40 - nH RCC'+EE' - 1,2 - mΩ min. typ. max. - 1,25 1,6 V - 1,20 - V - 88 - A - 92 - A - 3,4 - µC - 5,6 - µC - - - mJ - 1,5 - mJ Transistor / Transistor IC= 50A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE= ±15V, RG= 2,7Ω, Tvj= 25°C td,on VGE= ±15V, RG= 2,7Ω, Tvj= 125°C IC= 50A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 2,7Ω, Tvj= 25°C tr VGE= ±15V, RG= 2,7Ω, Tvj= 125°C IC= 50A, VCC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE= ±15V, RG= 2,7Ω, Tvj= 25°C td,off VGE= ±15V, RG= 2,7Ω, Tvj= 125°C IC= 50A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 2,7Ω, Tvj= 25°C tf VGE= ±15V, RG= 2,7Ω, Tvj= 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data IC= 50A, VCC= 300V, VGE= 15V RG= 2,7Ω, Tvj= 125°C, Lσ = 35nH IC= 50A, VCC= 300V, VGE= 15V RG= 2,7Ω, Tvj= 125°C, Lσ = 35nH tP ≤ 10µsec, VGE ≤ 15V Tvj≤125°C, VCC=360V, VCEmax= VCES -LσCE ·di/dt Modulinduktivität stray inductance module Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip Tc= 25°C Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF= 50A, VGE= 0V, Tvj= 25°C IF= 50A, VGE= 0V, Tvj= 125°C VF IF= 50A, -diF/dt= 2900A/µsec Rückstromspitze peak reverse recovery current VR= 300V, VGE= -10V, Tvj= 25°C IRM VR= 300V, VGE= -10V, Tvj= 125°C IF= 50A, -diF/dt= 2900A/µsec Sperrverzögerungsladung recoverred charge VR= 300V, VGE= -10V, Tvj= 25°C Qr VR= 300V, VGE= -10V, Tvj= 125°C IF= 50A, -diF/dt= 2900A/µsec Abschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25°C VR= 300V, VGE= -10V, Tvj= 125°C 2 (8) Erec BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,44 K/W - - 0,80 K/W Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Diode / diode, DC RthJC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λPaste= 1W/m*K / λgrease= 1W/m*K RthCK - 0,03 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage insulation 15 mm Luftstrecke clearance 8,5 mm CTI comperative tracking index 275 Anzugsdrehmoment für mech. Befestigung mounting torque Schraube M6 screw M6 5 M1 -15 Gewicht weight G Nm +15 % 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C= f (VCE) VGE= 15V 100 90 Tvj = 25°C 80 Tvj = 125°C IC [A] 70 60 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C= f (VCE) Tvj= 125°C 100 90 VGE = 8V 80 VGE = 9V VGE = 10V IC [A] 70 VGE = 12V VGE = 15V 60 VGE = 20V 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Übertragungscharakteristik (typisch) Transfer characteristic (typical) I C= f (VGE) VCE= 20V 100 90 Tvj = 25°C 80 Tvj = 125°C IC [A] 70 60 50 40 30 20 10 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F= f (VF) 100 90 Tvj = 25°C Tvj = 125°C 80 IF [A] 70 60 50 40 30 20 10 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 VF [V] 5 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Schaltverluste (typisch) Switching losses (typical) E on= f (IC), Eoff= f (IC), Erec= f (IC) RG,on= 2,7Ω, Ω,= Ω , VCC= 300V, Tvj= 125°C Ω, =RG,off = 2,7Ω 2,5 Eon Eoff E [mJ] 2,0 Erec 1,5 1,0 0,5 0,0 0 20 40 60 80 100 IC [A] Schaltverluste (typisch) Switching losses (typical) E on= f (RG), Eoff= f (RG), Erec= f (RG) IC= 50A , VCC= 300V , Tvj = 125°C 2,5 E [mJ] 2,0 1,5 1,0 0,5 Eon Eoff Erec 0,0 0 5 10 15 20 RG [Ω Ω] 6 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Transienter Wärmewiderstand Transient thermal impedance Z thJC = f (t) 1 ZthJC [K / W] 0,1 Zth:IGBT Zth:Diode 0,01 0,001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] τi [sec] ri [K/kW] τi [sec] : IGBT 1 18,6 2 230,6 3 155,1 4 35,7 : IGBT 0,0018 0,0240 0,0651 0,6626 : Diode 281,9 270,4 169,8 77,9 : Diode 0,0487 0,0169 0,1069 0,9115 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE= +15V, R G,off = 2,7Ω, Ω, Tvj= 125°C 120 100 80 IC [A] 60 IC,Modul 40 IC,Chip 20 0 0 100 200 300 400 500 600 700 VCE [V] 7 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Gehäusemaße / Schaltbild Package outline / Circuit diagram 13 M5 10 6 1 17 7 3 23 23 6 6 2 2,8 x 0,5 80 94 17 5 4 6 7 1 3 5 2 4 8 (8) BSM 50 GB 60 DLC 2000-02-08 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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