VISHAY ST230S16P0VPBF

ST230SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 230 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
RoHS
• Hermetic metal case with ceramic insulator
COMPLIANT
(Also available with glass-metal seal up to 1200 V)
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
TO-209AB (TO-93)
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
• DC motor controls
IT(AV)
230 A
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
ITSM
I2 t
VALUES
UNITS
230
A
85
°C
360
A
50 Hz
5700
60 Hz
5970
50 Hz
163
60 Hz
149
VDRM/VRRM
400 to 1600
Typical
tq
TJ
A
kA2s
V
100
µs
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST230S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
16
1600
1700
Document Number: 94399
Revision: 11-Aug-08
VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM
PEAK VOLTAGE
AT TJ = TJ MAXIMUM
V
mA
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ST230SPbF Series
Phase Control Thyristors
(Stud Version), 230 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
I2√t
85
°C
t = 10 ms
5700
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
A
360
t = 10 ms
I2 t
UNITS
230
DC at 78 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
5970
Sinusoidal half wave,
initial TJ = TJ maximum
5000
163
148
115
100 % VRRM
reapplied
1630
Low level value of threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.92
VT(TO)2
(I > π x IT(AV)), TJ = TJ maximum
0.98
Low level value of on-state slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.88
High level value of on-state slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
0.81
Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.55
VTM
Maximum holding current
IH
Maximum (typical) latching current
IL
kA2s
105
t = 0.1 to 10 ms, no voltage reapplied
High level value of threshold voltage
Maximum on-state voltage
A
4800
600
TJ = 25 °C, anode supply 12 V resistive load
1000 (300)
kA2√s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
VALUES
UNITS
1000
A/µs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
µs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
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For technical questions, contact: [email protected]
Document Number: 94399
Revision: 11-Aug-08
ST230SPbF Series
Phase Control Thyristors
(Stud Version), 230 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp ≤ 5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp ≤ 5 ms
3.0
IGT
TJ = 125 °C
TJ = - 40 °C
DC gate voltage required to trigger
VGT
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
TJ = TJ maximum
A
V
5.0
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
TJ = 25 °C
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with rated
VDRM anode to cathode applied
UNITS
W
20
TJ = TJ maximum, tp ≤ 5 ms
TJ = - 40 °C
DC gate current required to trigger
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation
0.10
Mounting surface, smooth, flat and greased
0.04
Non-lubricated threads
31
(275)
Lubricated threads
24.5
(210)
°C
K/W
Mounting torque, ± 10 %
Approximate weight
280
Case style
See dimensions - link at the end of datasheet
N·m
(lbf ⋅ in)
g
TO-209AB (TO-93)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
0.027
60°
0.036
0.037
30°
0.060
0.060
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
Document Number: 94399
Revision: 11-Aug-08
For technical questions, contact: [email protected]
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ST230SPbF Series
Phase Control Thyristors
(Stud Version), 230 A
Vishay High Power Products
Maximum Allowable Case Temperature (°C)
130
ST230S Series
RthJC (DC) = 0.1 K/ W
120
110
Conduction Angle
100
90
60°
90°
120°
30°
180°
80
0
50
100
150
200
250
130
ST230SSeries
RthJC (DC) = 0.1 K/ W
120
110
Conduction Period
100
90
30°
80
60°
90°
120°
70
0
100
DC
180°
200
300
400
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
SA
08
0.
K/
W
=
W
K/
K/
W
ta
el
-D
0.3
K/
W
0.4
K/ W
0.5
K/ W
150
R
RMSLimit
0.
2
h
R t
200
0.
16
W
K/
250
180°
120°
90°
60°
30°
300
1
0.
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Conduction Angle
0.8
K/ W
1.2 K
/W
100
ST230S Series
TJ = 125°C
50
0
0
50
100
150
200
250
25
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
450
DC
180°
120°
90°
60°
30°
400
Conduction Period
150
100
ST230SSeries
TJ = 125°C
50
R
200 RMSLimit
K/
W
0.2
K/
W
0.3
K/ W
0.4
K/ W
0.5
K/ W
0.8 K/
W
ta
el
-D
250
W
K/
0.
16
th
SA
K/
W
08
0.
300
0.
1
=
350
R
Maximum Average On-state Pow er Loss (W)
Fig. 3 - On-State Power Loss Characteristics
1.2 K/ W
0
0
50 100 150 200 250 300 350 400
25
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: [email protected]
Document Number: 94399
Revision: 11-Aug-08
ST230SPbF Series
5500
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Phase Control Thyristors
(Stud Version), 230 A
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
5000
4500
4000
3500
3000
2500
ST230S Series
2000
1
10
100
Vishay High Power Products
6000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
5000
No Voltage Reapplied
Rated VRRM Reapplied
4500
5500
4000
3500
3000
2500
ST230SSeries
2000
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
1000
Tj = 25˚C
100
Tj = 125˚C
ST230S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
RthJC = 0.1 K/ W
(DC Operation)
0.1
0.01
ST230S Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Document Number: 94399
Revision: 11-Aug-08
For technical questions, contact: [email protected]
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5
ST230SPbF Series
Phase Control Thyristors
(Stud Version), 230 A
Vishay High Power Products
100
VGD
IGD
0.1
0.001
Tj=25 °C
1
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
= 4ms
= 2ms
= 1ms
= 0.66ms
(a)
(1)
Devic e: ST230SSeries
0.01
tp
tp
tp
tp
Tj=-40 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
10
tr<=1 µs
(b)
(2)
(3) (4)
Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
23
0
S
16
P
0
V
PbF
1
2
3
4
5
6
7
8
9
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
S = Compression bonding stud
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
P = Stud base 3/4"-16UNF2A threads
7
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
8
-
9
-
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
Lead (Pb)-free
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
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http://www.vishay.com/doc?95077
For technical questions, contact: [email protected]
Document Number: 94399
Revision: 11-Aug-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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