ST180CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 350 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) RoHS COMPLIANT • Lead (Pb)-free TO-200AB (A-PUK) • Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY • DC motor controls IT(AV) 350 A • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths VALUES UNITS 350 A 55 °C 660 A 25 °C 50 Hz 5000 60 Hz 5230 50 Hz 125 60 Hz 114 A ITSM I2 t VDRM/VRRM Typical tq TJ kA2s 400 to 2000 V 100 µs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST180C..C VOLTAGE CODE VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 Document Number: 94396 Revision: 11-Aug-08 For technical questions, contact: [email protected] 30 www.vishay.com 1 ST180CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 350 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled I2√t 55 (85) °C t = 10 ms 5000 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing A 660 t = 10 ms I2 t UNITS DC at 25 °C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 350 (140) No voltage reapplied 100 % VRRM reapplied No voltage reapplied 5230 Sinusoidal half wave, initial TJ = TJ maximum 4400 125 114 88 100 % VRRM reapplied 1250 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.08 VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.14 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.18 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 1.14 Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 VTM Maximum holding current IH Maximum (typical) latching current IL kA2s 81 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 4200 600 TJ = 25 °C, anode supply 12 V resistive load 1000 (300) kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94396 Revision: 11-Aug-08 ST180CPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 350 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp ≤ 5 ms 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp ≤ 5 ms TJ = 25 °C 20 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD A V 5.0 IGT TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 3.0 TJ = - 40 °C DC gate current required to trigger MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TJ - 40 to 125 TStg - 40 to 150 DC operation single side cooled RthJ-hs Maximum thermal resistance, case to heatsink TEST CONDITIONS RthC-hs 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Approximate weight Case style 0.17 DC operation double side cooled Mounting force, ± 10 % See dimensions - link at the end of datasheet °C K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.015 0.015 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94396 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 ST180CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 350 A 130 ST180C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 Ø 90 Conduction angle 80 70 30° 180° 60 60° 50 90° 120° 90 80 Ø Conduction period 70 60 50 40 90° 30° 60° 180° DC 120° 100 50 150 200 250 0 100 200 300 400 500 600 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 700 1000 ST180C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 110 100 90 Ø 80 Conduction period 70 60 50 30° 40 30 20 0 100 DC 90° 60° 180° 800 700 RMS limit 600 500 400 Ø 300 Conduction angle 200 ST180C..C Series TJ = 125 °C 100 120° 0 200 400 300 0 100 150 200 250 300 350 400 450 50 Average On-State Current (A) Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics ST180C..C Series (Double side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 Ø Conduction angle 80 70 60 30° 180° 50 40 60° 30 90° 120° 20 50 100 150 200 250 300 350 400 450 Maximum Average On-State Power Loss (W) 130 0 180° 120° 90° 60° 30° 900 Maximum Average On-State Power Loss (W) 120 Maximum Allowable Heatsink Temperature (°C) 100 20 0 Maximum Allowable Heatsink Temperature (°C) 110 30 40 www.vishay.com 4 ST180C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 DC 180° 120° 90° 60° 30° RMS limit Ø Conduction period ST180C..C Series TJ = 125 °C 0 100 200 300 400 500 600 700 Average On-State Current (A) Average On-State Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics For technical questions, contact: [email protected] Document Number: 94396 Revision: 11-Aug-08 ST180CPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 350 A 5000 4500 Maximum non repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No Voltage Reapplied Rated VRRM Reapplied 4500 Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) At any rated load condition and with rated VRRM applied following surge 3500 3000 2500 4000 3500 3000 2500 ST180C..C Series ST180C..C Series 2000 1 10 2000 0.01 100 Instantaneous On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10 000 TJ = 25 °C TJ = 125 °C 1000 ST180C..C Series 100 1 2 3 4 5 6 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics ZthJ-hs - Transient Thermal Impedance (K/W) 1 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST180C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94396 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 ST180CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 350 A 10 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs (b) IGD TJ = 40 °C VGD 0.1 0.001 TJ = 25 °C 1 tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms (a) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) 0.1 (3) (4) Frequency limited by PG(AV) Device: ST180C..C Series 0.01 (2) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 18 0 C 20 C 1 - PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (A-PUK) 7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) 9 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95074 For technical questions, contact: [email protected] Document Number: 94396 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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