500 mW EPITAXIAL PLANAR DIODES 1N4448 Data Sheet Mechanical Dimensions Description JEDEC D0-35 .120 .200 .060 .090 Features 1.00 Min. .018 .022 n PLANAR PROCESS n INDUSTRY STANDARD DO-35 PACKAGE n 500 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) 1N4448 Units 1N4448 100 75 Volts Volts Average Forward Rectified Current...IO ............................................. 215 ............................................... mAmps Non-Repetitive Peak Forward Surge Current...IFSM ............................................. 500 ............................................... mAmps ............................................. 500 ............................................... mW ......................................... -25 to 85 .......................................... °C °C ......................................... -65 to 150 .......................................... Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 100 mA Maximum DC Reverse Current...IR @ VR = 75v Maximum Frequency...f Maximum Diode Capacitance...CD Maximum Reverse Recovery Time...tRR ............................................. 1.0 ............................................... ............................................. ............................................. ............................................. ............................................. Device Under TTest est .01 uF 50 Ohms RG = 50 Ohms Page 8-6 ............................................... ............................................... ............................................... ............................................... Output Trr IF 5K Ohms 5.0 100 2.0 4.0 IR 0.1 IR Volts µAmps MHz pF ns