FBAV19...21 Series 500 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions Description JEDEC D0-35 .120 .200 1.00 Min. .060 .090 Features .018 .022 n PLANAR PROCESS n INDUSTRY STANDARD DO-35 PACKAGE n 500 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 FBAV19...21 Series Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 100 mA Maximum DC Reverse Current...IR @ Rated VR Dynamic Forward Resistance...RF Maximum Diode Capacitance...CD Typical Thermal Resistance...RθJA Maximum Reverse Recovery Time...tRR Units FBAV19 FBAV20 FBAV21 120 100 200 150 250 200 Volts Volts ............................................. 250 ............................................... mAmps ............................................. 500 ............................................... mAmps ............................................. 500 ............................................... mW ......................................... -25 to 85 .......................................... °C ......................................... -65 to 200 .......................................... °C ............................................. 1.0 ............................................... ............................................. ............................................. ............................................. ............................................. ............................................. 0.1 5.0 5.0 .35 50 Volts ............................................... µAmps ............................................... Ω ............................................... pF ............................................... K / mW ............................................... ns Device Under TTest est 2V VO 6D Ohms 2nF 5K Ohms Page 8-3