1N4148/1N4448 F ORMOSA MS High-speed switching diode Features 1. High reliability 2. High speed (t rr= 4 ns) Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1µ s Repetitive peak forward voltage Forward current Type Symbol Value Unit VRRM 100 V VR 75 V IFSM 2 A IFRM 500 mA IF 300 mA Average forward current VR =0 IFAV 150 mA Power dissipation I=4mm TL= 25? PV 500 mW Tj 175 ? Tstg -65~+175 ? Junction temperature Storage temperature range Maximum Thermal Resistance Tj=25? Parameter Junction ambient Test Conditions I=4mm TL=constant FORMOSA MS Symbol Value Unit RthJA 350 K/W 1 1N4148/1N4448 F ORMOSA MS Electrical Characteristics Tj=25? Parameter Forward voltage Reverse current Test Conditions Type Symbol Min IF =5mA 1N4448 VF 0.62 IF =10mA 1N4148 VF IF =100mA 1N4448 VF Typ Max Unit 0.72 V 0.86 1 V 0.93 1 V VR =20V IR 25 nA VR =20V, Tj=150? IR 50 µ A VR =75V IR 5 µ A Breakdown current IR =100µ A,tp/T=0.01,tp=0.3ms V(BR) Diode capacitance VR =0, f=1MHz, VHF =50mV CD Rectification efficiency VHF =2V, f=100MHz ? Reverse recovery time IF = IR =10mA, iR =1mA trr 8 ns IF =10mA, VR =6V, iR =0.1× IR , trr 4 ns R 100 V 4 pF 45 % RL=100O Characteristics (Tj=25? unless otherwise specified) 1N4148 1N4448 FORMOSA MS 2 1N4148/1N4448 F ORMOSA MS Dimensions in mm Standard Glass Case JEDEC DO 35 FORMOSA MS 3