1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 ∗This product is available only outside of Japan. zExternal dimensions (Units : mm) zApplication High-speed switching 1N4531 CATHODE BAND (BLACK) Type No. zFeatures 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. φ 0.5±0.1 C A 29±1 2.7±0.3 φ 1.8±0.2 29±1 ROHM : MSD EIAJ : − JEDEC : DO-34 zConstruction Silicon epitaxial planar 1N4148 / 1N4150 / 1N4448 CATHODE BAND (BLACK) Type No. φ 0.5±0.1 C A 29±1 3.8±0.2 φ 1.8±0.2 29±1 ROHM : GSD EIAJ : − JEDEC : DO-35 zAbsolute maximum ratings (Ta = 25°C) Type VRM (V) VR (V) IFM (mA) IO (mA) IF (mA) IFSM 1µs (A) P (mW) Tj (°C) Topr (°C) Tstg (°C) 1N4531 100 75 450 150 200 2 500 200 −65~+200 −65~+200 1N4148 100 75 450 150 200 2 500 200 −65~+200 −65~+200 1N4150 50 50 600 200 250 4 500 200 −65~+200 −65~+200 1N4448 100 75 450 150 200 2 500 200 −65~+200 −65~+200 zElectrical characteristics (Ta = 25°C) VF (V) Type @ @ 0.1mA 0.25mA BV (V) Min. @ @ @ @ @ @ @ 1mA 2mA 5mA 10mA 20mA 30mA 50mA @ @ @ 100mA 200mA 250mA 1N4531 @ 5µA 75 @ 100µA 100 1.0 1N4148 1.0 0.66 0.54 0.76 0.82 0.87 1N4150 0.74 0.62 0.86 0.92 0.62 1N4448 0.72 1.0 The upper figure is the minimum VF and the lower figure is the maximum VF value. 75 100 − 50 − 100 IR (µA) Max. @25°C VR (V) 0.025 20 5.0 75 0.025 20 5.0 75 0.1 50 0.025 20 5.0 75 trr (ns) VR=6V VR=0 IF=10mA VR (V) f=1MHz RL=100Ω Cr (pF) @150°C 50.0 20 4 4 50.0 20 4 4 100.0 50 2.5 4 50.0 20 4 4 1.0 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes zElectrical characteristic curves (Ta = 25°C) REVERSE CURRENT : IR (nA) 20 10 5 2 0.2 0 25°C Ta=75°C Ta=25°C Ta=−25 °C 1 0.5 100°C 3000 Ta=1 FORWARD CURRENT : IF (mA) 50 1000 70°C 300 50°C 100 30 Ta=25°C 10 3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 FORWARD VOLTAGE : VF (V) 40 60 80 100 120 Fig. 2 Reverse characteristics 3 100 SURGE CURRENT : Isurge (A) VR=6V Irr=1/10IR 2 1 PULSE Single pulse 50 20 10 5 2 0 0 10 20 1 0.1 30 FORWARD CURRENT : IF (mA) 10 5Ω 50Ω SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0.1IR 0 IR 1000 10000 Fig. 5 Surge current characteristics D.U.T. PULSE GENERATOR OUTPUT 50Ω 100 PULSE WIDTH : Tw (ms) Fig. 4 Reverse recovery time characteristics 0.01µF 1 Fig. 6 Reverse recovery time (trr) measurement circuit 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics REVERSE RECOVERY TIME : trr (ns) CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 Fig. 3 Capacitance between terminals characteristics