ROHM 1N4148T-72

1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
Switching diode
1N4531 / 1N4148 / 1N4150 / 1N4448
∗This product is available only outside of Japan.
zExternal dimensions (Units : mm)
zApplication
High-speed switching
1N4531
CATHODE BAND (BLACK)
Type No.
zFeatures
1) Glass sealed envelope. (MSD, GSD)
2) High speed.
3) High reliability.
φ 0.5±0.1
C
A
29±1
2.7±0.3
φ 1.8±0.2
29±1
ROHM : MSD
EIAJ : −
JEDEC : DO-34
zConstruction
Silicon epitaxial planar
1N4148 / 1N4150 / 1N4448
CATHODE BAND (BLACK)
Type No.
φ 0.5±0.1
C
A
29±1
3.8±0.2
φ 1.8±0.2
29±1
ROHM : GSD
EIAJ : −
JEDEC : DO-35
zAbsolute maximum ratings (Ta = 25°C)
Type
VRM
(V)
VR
(V)
IFM
(mA)
IO
(mA)
IF
(mA)
IFSM
1µs
(A)
P
(mW)
Tj
(°C)
Topr
(°C)
Tstg
(°C)
1N4531
100
75
450
150
200
2
500
200
−65~+200
−65~+200
1N4148
100
75
450
150
200
2
500
200
−65~+200
−65~+200
1N4150
50
50
600
200
250
4
500
200
−65~+200
−65~+200
1N4448
100
75
450
150
200
2
500
200
−65~+200
−65~+200
zElectrical characteristics (Ta = 25°C)
VF (V)
Type
@
@
0.1mA 0.25mA
BV (V) Min.
@
@
@
@
@
@
@
1mA
2mA
5mA
10mA
20mA
30mA
50mA
@
@
@
100mA 200mA 250mA
1N4531
@
5µA
75
@
100µA
100
1.0
1N4148
1.0
0.66
0.54
0.76
0.82
0.87
1N4150
0.74
0.62
0.86
0.92
0.62
1N4448
0.72
1.0
The upper figure is the minimum VF and the lower figure is the maximum VF value.
75
100
−
50
−
100
IR (µA) Max.
@25°C
VR (V)
0.025
20
5.0
75
0.025
20
5.0
75
0.1
50
0.025
20
5.0
75
trr (ns)
VR=6V
VR=0
IF=10mA
VR (V) f=1MHz RL=100Ω
Cr (pF)
@150°C
50.0
20
4
4
50.0
20
4
4
100.0
50
2.5
4
50.0
20
4
4
1.0
1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
zElectrical characteristic curves (Ta = 25°C)
REVERSE CURRENT : IR (nA)
20
10
5
2
0.2
0
25°C
Ta=75°C
Ta=25°C
Ta=−25
°C
1
0.5
100°C
3000
Ta=1
FORWARD CURRENT : IF (mA)
50
1000
70°C
300
50°C
100
30
Ta=25°C
10
3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
FORWARD VOLTAGE : VF (V)
40
60
80
100 120
Fig. 2 Reverse characteristics
3
100
SURGE CURRENT : Isurge (A)
VR=6V
Irr=1/10IR
2
1
PULSE
Single pulse
50
20
10
5
2
0
0
10
20
1
0.1
30
FORWARD CURRENT : IF (mA)
10
5Ω
50Ω
SAMPLING
OSCILLOSCOPE
INPUT
100ns
OUTPUT
trr
0.1IR
0
IR
1000
10000
Fig. 5 Surge current characteristics
D.U.T.
PULSE GENERATOR
OUTPUT 50Ω
100
PULSE WIDTH : Tw (ms)
Fig. 4 Reverse recovery time
characteristics
0.01µF
1
Fig. 6 Reverse recovery time (trr) measurement circuit
3.0
f=1MHz
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
REVERSE RECOVERY TIME : trr (ns)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
100
Fig. 3 Capacitance between
terminals characteristics