Agilent HCPL-181 Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Description The HCPL-181 contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin mini-flat SMD package with a 2.0 mm profile. The small dimension of this product allows significant space saving. The package volume is 30% smaller than that of conventional DIP type. Input-output isolation voltage is 3750 Vrms. Response time, tr, is typically 4 µs and minimum CTR is 50% at input current of 5 mA. Ordering Information Specify part number followed by Option Number (if desired). HCPL-181-XXXE Lead Free Option Number 000 = No Options 060 = IEC/EN/DIN EN 60747-5-2 Option 00A = Rank Mark A 00B = Rank Mark B 00C = Rank Mark C 00D = Rank Mark D Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 4 Schematic 3 ANODE 1 IF IC 4 + COLLECTOR Features • Current Transfer Ratio (CTR: min. 50% at IF = 5 mA, VCE = 5 V) • High input-output isolation voltage (Viso = 3750 Vrms) • High collector-emitter voltage (VCEO = 80 V) • Response time (tr: typ., 4 µs at VCE = 2 V, IC = 2 mA, RL = 100 Ω) • Mini-flat package (2.0 mm profile) in tape and reel package • UL approved • CSA approved • IEC/EN/DIN EN 60747-5-2 approved • Options available: – IEC/EN/DIN EN 60747-5-2 approvals (060) Applications • I/O interfaces for computers • System appliances, measuring instruments • Signal transmission between circuits of different potentials and impedances • Feedback circuit in power supply VF CATHODE 1 1. ANODE 2. CATHODE – 2 3 EMITTER 2 3. EMITTER 4. COLLECTOR CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Package Outline Drawings HCPL-181-000E 2.54 ± 0.25 3.60 ± 0.3 181 Y WW LEAD FREE 5.30 ± 0.3 DATE CODE *1 0.2 ± 0.05 2.00 ± 0.2 4.40 ± 0.2 0.10 ± 0.1 0.40 ± 0.1 7.00 + 0.2 – 0.7 RANK *2 DIMENSIONS IN MILLIMETERS. HCPL-181-060E 2.54 ± 0.25 3.60 ± 0.3 181 V Y WW LEAD FREE 5.30 ± 0.3 DATE CODE *1 0.2 ± 0.05 2.00 ± 0.2 4.40 ± 0.2 + 0.2 7.00 – 0.7 0.10 ± 0.1 0.40 ± 0.1 RANK *2 DIMENSIONS IN MILLIMETERS. 2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of (1) above. 2 30 seconds 250°C Temperature (°C) Solder Reflow Temperature Profile 1) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 260°C (Peak Temperature) 217°C 200°C 150°C 60 sec 25°C 60 ~ 150 sec 90 sec Time (sec) 60 sec Absolute Maximum Ratings (TA = 25˚C) Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector Power Dissipation Total Power Dissipation Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) –55˚C to +155˚C –55˚C to +100˚C 260˚C for 10 s Rank Mark A B C D 50 mA 6V 70 mW 50 mA 80 V 6V 150 mW 170 mW 3750 Vrms CTR (%) 80 ~ 160 130 ~ 260 200 ~ 400 300 ~ 600 Conditions IF = 5 mA, VCE = 5 V, TA = 25˚C Electrical Specifications (TA = 25˚C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Isolation Resistance Symbol VF IR Ct ICEO BVCEO BVECO IC CTR VCE(sat) tr tf Riso Min. – – – – 80 6 2.5 50 – – – 5 x 1010 Typ. 1.2 – 30 – – – – – – 4 3 1 x 1011 Max. 1.4 10 250 100 – – 30 600 0.2 18 18 – Units V µA pF nA V V mA % V µs µs Ω Floating Capacitance Cf – 0.6 1.0 pF 50 40 30 20 10 0 25 50 75 100 125 TA – AMBIENT TEMPERATURE – °C Figure 1. Forward current vs. temperature. 3 6 200 VCE(SAT.) – COLLECTOR-EMITTER SATURATION VOLTAGE – V IF – FORWARD CURRENT – mA 60 0 -55 IF = 20 mA, IC = 1 mA VCC = 2 V, IC = 2 mA RL = 100 Ω DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz IC x 100% IF PC – COLLECTOR POWER DISSIPATION – mW * CTR = Test Conditions IF = 20 mA VR = 4 V V = 0, f = 1 KHz VCE = 20 V IC = 0.1 mA, IF = 0 IE = 10 µA, IF = 0 IF = 5 mA, VCE = 5 V 150 100 50 0 -55 TA = 25°C 5 25 50 75 100 125 TA – AMBIENT TEMPERATURE – °C Figure 2. Collector power dissipation vs. temperature. IC = 1 mA 4 IC = 3 mA 3 IC = 5 mA IC = 7 mA 2 1 0 0 IC = 0.5 mA 0 5 10 15 IF – FORWARD CURRENT – mA Figure 3. Collector-emitter saturation voltage vs. forward current. TA = 0°C TA = 25°C 100 TA = -25°C 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE = 5 V TA = 25°C 180 160 140 120 100 80 60 40 20 0 0 VCE(SAT.) – COLLECTOR-EMITTER SATURATION VOLTAGE – V RELATIVE CURRENT TRANSFER RATIO – % 100 50 0 20 40 60 80 0.04 0.02 60 80 Figure 8. Collector-emitter saturation voltage vs. temperature. VCE = 2 V IC = 2 mA TA = 25°C VOLTAGE GAIN AV – dB VCE = 2 V IC = 2 mA TA = 25°C 50 tr 20 10 tf 5 td 2 1 ts 100 TA – AMBIENT TEMPERATURE – °C Figure 7. Relative current transfer ratio vs. temperature. RESPONSE TIME – µs 40 0.5 0 10 RL = 10 kΩ RL = 1 kΩ RL = 100 Ω 20 0.05 0.1 0.2 0.5 1 2 5 10 RL – LOAD RESISTANCE – kΩ Figure 10. Response time vs. load resistance. 0.5 1 2 5 10 20 50 100 200 500 f – FREQUENCY – kHz Figure 11. Frequency response. IF = 15 mA 20 IF = 10 mA 10 IF = 5 mA 1 0 2 3 4 5 7 6 8 9 10000 0.06 0 20 PC (MAX.) IF = 20 mA 30 Figure 6. Collector current vs. collectoremitter voltage. 0.08 100 TA = 25°C VCE – COLLECTOR-EMITTER VOLTAGE – V IF = 20 mA IC = 1 mA TA – AMBIENT TEMPERATURE – °C 4 50 0.10 IF = 5 mA VCE = 2 V 0.2 0.1 20 Figure 5. Current transfer ratio vs. forward current. 150 200 100 10 IF – FORWARD CURRENT – mA Figure 4. Forward current vs. forward voltage. 500 5 2 VF – FORWARD VOLTAGE – V IF = 30 mA IF = 25 mA 40 0 ICEO – COLLECTOR DARK CURRENT – nA TA = 50°C 200 50 200 IC – COLLECTOR CURRENT – mA TA = 75°C CTR – CURRENT TRANSFER RATIO – % IF – FORWARD CURRENT – mA 500 VCE = 20 V 1000 100 10 1 20 40 60 80 100 TA – AMBIENT TEMPERATURE – °C Figure 9. Collector dark current vs. temperature. Test Circuit for Response Time Test Circuit for Frequency Response VCC VCC RL RD RD INPUT OUTPUT OUTPUT ~ INPUT 10% OUTPUT 90% td ts tr 5 tf RL www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/International), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5989-0306EN October 27, 2004 5989-1738EN