SPECIFICATION Device Name : IGBT Module Type Name : 4MBI75T-060 Spec. No. : MS5F 5432 Fuji Electric Co.,Ltd. Matsumoto Factory Apr. 23 ’03 S.Ogawa Apr. 23 ’03 T.Miyasaka Apr. - 23 - ’03 K.Yamada T.Fujihira MS5F 5432 1 14 H04-004-07 a b c Revised Records Date Classification Apr. - 23- ’03 enactment Oct. - 16- ’03 Revision a Dec. - 10- ’03 Revision b Sep. - 07- ’04 Revision c Ind. Content Applied date Drawn T.Miyasaka K.Yamada Issued date Added thermistor (P3/14, 4/14, 12/14) Revised VCE(sat),VF (P4/14, 10/14, 12/14) Revised VF (P4/14, 12/14) Checked Approved T.Fujihira Y.Kobayashi T.Miyasaka K.Yamada Y.Seki Y.Kobayashi S.Miyashita K.Yamada Y.Seki Y.Kobayashi S.Miyashita K.Yamada Y.Seki MS5F 5432 2 14 H04-004-06 a b c 4MBI75T-060 1. Outline Drawing ( Unit : mm ) ( a ) shows reference dimension. 2. Equivalent circuit [Inverter] [Thermistor] 8 MS5F 5432 9 3 14 H04-004-03 a b c 3. Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ） Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current Ic Duty=100 % Ic pulse IF 1ms Duty=50 % 1ms 1 device Tj Tstg Storage temperature a Ic=1mA IF pulse Pc Collector Power Dissipation Junction temperature Maximum Ratings 600 Conditions Units V ±20 75 V 150 75 A 150 178 W 150 -40~ +125 °C °C 2500 V 3.5 Nm Isolation between terminal and copper base *1 Viso AC : 1min. voltage between thermistor and others *2 Screw Mounting *3 Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : Mounting 2.5~3.5 N m (M5) 4. Electrical characteristics ( at Tj= 25°Cunless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Input capacitance Output capacitance Thermistor Symbols Conditions min. typ. Max. Units ICES VGE 0 V, VCE = 600 V - - 1.0 mA I GES VCE 0 V, VGE = ±20 V - - 200 nA 6.2 6.7 7.7 V 2.3 2.6 - V VGE(th) VCE VCE(sat) 20 V, Ic = VGE Ic = 15 75 0 10 V A V V 75 mA Chip Terminal - b b b b 2.0 2.3 5500 1000 Cies Coes VGE = Cres ton f= 1 MHz Vcc = 300 V - 850 0.4 1.2 tr tr(i) Ic = 75 A VGE ±15 V - 0.25 0.1 0.6 - Turn-off time toff tf RG = 51 Ω - 0.4 0.04 1.2 0.45 Forward on voltage VF Reverse recovery time trr Reverse transfer capacitance Turn-on time Allowabe avalanche energy during short circuit cutting off (Non-repetitive) a Characteristics PAV Resistance R B value B VCE IF = IF = pF μs Chip - c 2.1 c 2.5 Terminal - c 2.4 - c 2.8 0.3 μs mJ 75 A 75 A Ic > 150A ,Tj = 125°C 30 - - T = 25°C - 5000 - T =100°C 465 3305 495 3375 520 3450 T = 25/50°C V Ω K 5. Thermal resistance characteristics Items Thermal resistance (1 device) Contact Thermal resistance (1 device) Symbols Conditions IGBT FWD Rth(c-f) With thermal compound * Rth(j-c) Characteristics Units min. typ. Max. - 0.05 0.70 1.66 °C/W - * This is the value which is defined mounting on the additional cooling fin with thermal compound. MS5F 5432 4 14 H04-004-03 a b c 6. Indication on module 4MBI75 T -060 75A 600V P lace of m anufuc turing Lot No. 7. Applicable category This specification is applied to IGBT Module named 4MBI75T-060 8. Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35Ｃ and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when tranporting. ～ ～ 9. Definitions of switching time 90% 0V 0V V GE L trr Irr Ic 90% 10% 10% ～ ～ 0V 0A V CE Ic 90% Vcc RG ～ ～ VCE 10% VCE tr(i) V GE Ic tr tf toff ton MS5F 5432 5 14 H04-004-03 a b c 10. Definition of the allowable avalance energy during short circuit cutting off -VCEP PAV= IC 1 2 ×VCEP×ICP×tf(SC) -ICP VCE tf(SC) 11. UL recognition This products is recognized by Underwriters Laboratories Inc., the file No. is E82988. 12. Packing and Labeling Packing box Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box Display * Each modules are packed with electrical protection. MS5F 5432 6 14 H04-004-03 a b c 13. Reliability test results Reliability Test Items Test categories Test items Test methods and conditions (Aug.-2001 edition) Mechanical Tests 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time Test Method 401 MethodⅠ Test Method 402 methodⅡ 5 (1:0) 5 (1:0) 3 Vibration Test Method 403 Reference 1 Condition code B 5 (1:0) 4 Test Method 404 Condition code B 5 (1:0) Test Method 303 Condition code A 5 (1:0) Test Method 302 Condition code A 5 (1:0) Test Method 201 5 (1:0) Test Method 202 5 (1:0) Test Method 103 Test code C 5 (1:0) Test Method 103 Test code E 5 (1:0) Test Method 105 5 (1:0) Test Method 307 method Ⅰ Condition code A 5 (1:0) 5 6 1 2 3 4 Environment Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 : : : : 20N 10±1 sec. 2.5 ~ 3.5 N･m (M5) 10±1 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Shock Maximum acceleration: 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solderabitlity Solder temp. : 235±5 ℃ Immersion time : 5±0.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Resistance to Solder temp. : 260±5 ℃ Soldering Heat Immersion time : 10±1sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. High Temperature Storage temp. : 125±5 ℃ Storage Test duration : 1000hr. Low Temperature Storage temp. : -40±5 ℃ Storage Test duration : 1000hr. Temperature Storage temp. : 85±2 ℃ Humidity Relative humidity : 85±5% Storage Test duration : 1000hr. Unsaturated Test temp. : 120±2 ℃ Pressure Cooker Atmospheric pressure: 1.7 × 105 Pa Test humidity : 85±5% Test duration : 96hr. Temperature Cycle Test temp. : Low temp. -40±5 ℃ High temp. 125 ±5 ℃ Number of cycles RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 +5 -0 ℃ Low temp. 0 ℃ Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F 5432 7 14 H04-004-03 a b c Reliability Test Items Test categories Test items Test methods and conditions (Aug.-2001 edition) 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Endurance Endurance Tests Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number Test duration 2 High temperature Bias (for gate) Test temp. Test duration : Ta = 125±5 ℃ (Tj ≦ 150 ℃) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 5 (1:0) Test Method 101 5 (1:0) Test Method 102 Condition code C 5 (1:0) Test Method 106 5 (1:0) : Ta = 125±5 ℃ (Tj ≦ 150 ℃) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. 85±2 oC 85±5% VC = 0.8×VCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=100±5 deg Tj ≦ 150 ℃, Ta=25±5 ℃ 15000 cycles Failure Criteria Item Electrical characteristic Characteristic Leakage current Symbol - USL×2 USL×2 mA A Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA Saturation voltage VCE(sat) - USL×1.2 V - USL×1.2 USL×1.2 V mV - USL×1.2 mV resistance VF VGE or FWD Isolation voltage inspection Unit ICES ±IGES Forward voltage Thermal IGBT Visual Failure criteria Lower limit Upper limit Note VCE VF Viso Broken insulation - - The visual sample - Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F 5432 8 14 H04-004-03 a b c Reliability Test Results Mechanical Tests Test categorie s Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 5 0 5 0 MethodⅠ Test Method 402 methodⅡ 3 Vibration Test Method 403 5 0 4 Shock Condition code B Test Method 404 5 0 5 0 Condition code B 5 Solderabitlity Test Method 303 Environment Tests Condition code A 6 Resistance to Soldering Heat Test Method 302 5 0 1 High Temperature Storage Condition code A Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle Test Method 103 5 0 5 0 Test Method 105 5 0 6 Thermal Shock Test Method 307 5 0 1 High temperature Reverse Bias Test Method 101 5 0 Test Method 101 5 0 Test Method 102 5 0 5 0 Test code C Test Method 103 Test code E method Ⅰ Endurance Endurance Tests Tests Condition code A 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias Condition code C 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 106 MS5F 5432 9 14 H04-004-03 a b c b 200 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) b 200 VGE= 20V 15V 12V VGE= 20V 15V 12V 150 Collector current : Ic [ A ] Collector current : Ic [ A ] 150 10V 100 50 10V 100 50 8V 8V 0 0 0 b 200 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 12 10 Collector current : Ic [ A ] Collector - Emitter voltage : VCE [ V ] Tj= 25C 150 Tj= 125C 100 50 0 8 6 4 Ic=150A 2 Ic=75A Ic=37.5A 0 0 1 2 3 4 5 5 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25C 500 25 Cies 5000 1000 Coes 400 20 300 15 200 10 100 5 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 10000 Cres 200 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 100 200 300 0 400 Gate charge : Qg [ nC ] MS5F 5432 10 14 H04-004-03 a b c [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=51ohm, Tj= 25C 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg= 51ohm, Tj= 125C 1000 ton toff tr Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] ton toff tr 100 tf 100 tf 10 10 0 50 100 150 0 50 [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=+-15V, Tj= 25C 150 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=51ohm 8 ton toff 1000 tr 100 tf Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 5000 100 Collector current : Ic [ A ] Collector current : Ic [ A ] Eon(125C) 6 Eon(25C) 4 Eoff(125C) Eoff(25C) 2 Err(125C) Err(25C) 10 0 10 100 200 0 50 Gate resistance : Rg [ ohm ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=+-15V, Tj= 125C 150 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=51ohm, Tj<=125C 200 Eon 15 150 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 100 Collector current : Ic [ A ] 10 Eoff 5 100 50 Err 0 50 100 Gate resistance : Rg [ ohm ] 500 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] MS5F 5432 11 14 H04-004-03 a b c 300 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 150 Tj=125C Forward current : IF [ A ] [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=51ohm [ Inverter ] Forward current vs. Forward on voltage (typ.) c 100 Tj=25C 50 0 trr(125C) 100 trr(25C) Irr(125C) Irr(25C) 10 0 1 2 3 4 0 50 Forward on voltage : VF [ V ] 100 150 Forward current : IF [ A ] a Transient thermal resistance [ Th e r mi s t or ] Temperature characteristic (typ.) 100 3 1 IGBT Resistance : R [ kΩ ] Thermal resistanse : Rth(j-c) [ C/W ] FWD 0.1 0.02 0.001 10 1 0.1 0.01 0.1 Pulse width : Pw [ sec ] 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T emperat ure [°C ] MS5F 5432 12 14 H04-004-03 a b c Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。 絶対最大定格を超えて使用すると、素子が破壊する場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ 又はブレーカーを必ず付けて２次破壊を防いでください。 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。 製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は 致しかねます。 - Use this product within the power cycle curve (Technical Rep.No. : MT6M3947) 本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT6M3947) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合 があります。 - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 冷却フィンはネジ取り付け位置間で平坦度を100mm で100um 以下、表面の粗さは10um 以下にして下さい。 誤った取り扱 いをすると絶縁破壊を起こし、重大事故に発展する場合があります。 - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。 RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。 - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。 取り扱い時は静電気対策を実施して下さい。 - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。 端子構造が破壊する可能性があります。 - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) 逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。 誤点弧を起こさない為に-VGEは十分な値で設定して下さい。 （推奨値 : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。 誤点弧を起こさない為の最適なドライブ条件（+VGE, -VGE, RG等）でご使用下さい。 MS5F 5432 13 14 H04-004-03 a b c Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、 誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災 等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計 など安全確保のための手段を講じて下さい。 - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書 によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine ralaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを 目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力 制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に 満足することをご確認の上、ご利用下さい。 If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd. MS5F 5432 14 14 H04-004-03 a b c