CB112-13 (1300V / 1.0A ) Outline drawings, mm Fast Recovery Diode (FRD) Type name, Voltage class, Lot No. 25min 5.0±0.2 φ0.56 φ3.0±0.2 Cathode Mark 25min Molding resin : Epoxy resin UL:V-0 Features High voltage Marking High speed switching High reliability by planer design 112 Cathode mark Applications Type name High speed switching Lot No. (Month) 種07. 機 定 h 20 Lot No. (Year) Voltage class Maximum ratings and characteristics Marking color : Silver Absolute maximum ratings Item Symbol Conditions rc a 予 止 on m VRRM Non-repetitive peak reverse voltage VRSM Average output current IFAV Resistive load Ta=40°C Surge current IFSM Sine wave 10ms, 1shot T Storage temperature NTo 1300 V 1300 V 保uled befor new 月sched mend 3 年 is com t 7 c 00 odu t re 2 his pr Unit ete ign. 廃 l o 守 obs des Repetitive peak reverse voltage Operating junction temperature Rating j Tstg 1.0 A 30 A -40 to +150 °C -40 to +150 °C Max. Unit Electrical characteristics (at Ta=25°C unless otherwise specified ) Item Symbol Conditions Forward voltage drop VFM IFM=1.0A Reverse current IRRM VR=VRRM Reverse recovery time trr IF=0.1A,IR=0.1A,Irec=0.01A 1.3 50 1.5 V μA μs Mechanical characteristics Approximate mass http://www.fujielectric.co.jp/fdt/scd/ 0.3 g CB112-13 (1.0A) (1300V / 1.0A ) Characteristics Reverse Characteristic (typ.) Forward Characteristic (typ.) 2 10 o Tj=100 C 10 o Tj=100 C 1 IR Reverse Current μA 10 o IF Forward Current (A) Tj=25 C 1 0.1 0.6 0 10 o Tj= 25 C -1 10 -2 0.8 1.0 1.2 1.4 10 1.6 0 600 800 100 0.8 10 保uled befor new 0.4 0.2 月sched mend 3 年 is com t 7 c 00 odu t re 1 0 20 40 60 2 his pr 80 100 Ta Ambient Temperature T 1200 rc a 予 止 on m ete ign. 廃 l o 守 obs des 0.6 0.0 1000 1400 種07. 機 定 h 20 1.0 Cj Junction Capacitance (pF) (A) Average Forward Current 400 Junction Capacitance Characteristic (typ.) Current Derating (IFAV-Ta) 1.2 IFAV 200 VR Reverse Voltage (V) VF Forward Voltage (V) 120 (°C) No 140 1 10 VR Reverse Voltage (V)