Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Source (Thermal/RF Gnd) Description Agilent Technologies’s ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC [3]) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. Pin Connections and Package Marking Note: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin 2 (Gate) • Small package size: 2.0 x 2.0 x 0.75 mm Pin 3 • Point MTTF > 300 years [2] Pin 4 (Source) • MSL-1 and lead-free Pin 1 (Source) • Tape-and-reel packaging option available Bottom View Pin 8 Pin 1 (Source) The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested. • Excellent uniformity in product specifications Pin 2 (Gate) Pin 3 3Px Pin 4 (Source) Pin 7 (Drain) Specifications 2 GHz; 4V, 135 mA (Typ.) Pin 6 • 38 dBm output IP3 Pin 5 • 0.6 dB noise figure Top View Note: Package marking provides orientation and identification: “3P” = Device Code “x” = Date code indicates the month of manufacture. • 20 dB gain • 10.7 dB LFOM [4] • 24.5 dBm output power at 1 dB gain compression Applications • Front-end LNA Q1 and Q2 driver or pre-driver amplifier for Cellular/ PCS and WCDMA wireless infrastructure • Driver amplifier for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-pHEMT for other high linearity applications ATF-531P8 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum VDS Drain–Source Voltage[2] V 7 VGS Gate–Source Voltage[2] V -5 to 1 VGD Gate Drain Voltage[2] V -5 to 1 IDS Drain Current[2] mA 300 IGS Gate Current mA 20 Pdiss Total Power Dissipation[3] W 1 Pin max. RF Input Power dBm +24 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 θch_b Thermal Resistance[4] °C/W 63 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25°C. Derate 16 mW/°C for TB > 87°C. 4. Thermal resistance measured using 150°C Liquid Crystal Measurement method. 5. Device can safely handle +24 dBm RF Input Power provided IGS is limited to 20mA. IGS at P1dB drive level is bias circuit dependent. Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA [5,6] 160 180 400 0.9 V Cpk = 1.2 Stdev = 0.71 Cpk = 1.0 Stdev = 0.14 150 120 300 IDS (mA) 0.8 V 200 0.7 V 100 0.6 V 120 +3 Std -3 Std 90 +3 Std -3 Std 80 60 40 30 0.5 V 0 0 0 1 2 3 4 5 6 7 0 0 1.2 300 250 Stdev = 0.12 200 200 160 +3 Std -3 Std 120 100 80 50 40 19.5 20.5 21.5 0 24.2 24.4 GAIN (dB) Figure 4. Small Signal Gain LSL = 18.5, Nominal = 20.2 dB, USL = 21.5. +3 Std -3 Std 24.6 24.8 25 25.2 P1dB (dBm) Figure 5. P1dB Nominal = 24.6. Notes: 5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements. 2 36 37 38 Figure 3. OIP3 LSL = 35.5, Nominal = 38.1. 240 Cpk = 2.0 Stdev = 0.21 35 OIP3 (dBm) Figure 2. NF Nominal = 0.6, USL = 1.0. Figure 1. Typical I-V Curves (Vgs = 0.1 per step). 0 18.5 0.9 NF (dB) VDS (V) 150 0.6 0.3 39 40 41 ATF-531P8 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4V, Ids = 135 mA V — 0.68 — Vth Threshold Voltage Vds = 4V, Ids = 8 mA V — 0.3 — Idss Saturated Drain Current Vds = 4V, Vgs = 0V µA — 3.7 — Gm Transconductance Vds = 4.5V, Gm = ∆Idss/∆Vgs; ?Vgs = Vgs1 - Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V mmho — 650 — Igss Gate Leakage Current Vds = 0V, Vgs = -4V µA -10 -0.34 — NF Noise Figure[1] f = 2 GHz f = 900 MHz dB dB — — 0.6 0.6 1 — G Gain[1] f = 2 GHz f = 900 MHz dB dB 18.5 — 20 25 21.5 — OIP3 Output 3rd Order Intercept Point[1,2] f = 2 GHz f = 900 MHz dBm dBm 35.5 — 38 37 — — P1dB Output 1dB Compressed[1] f = 2 GHz f = 900 MHz dBm dBm — — 24.5 23 — — PAE Power Added Efficiency f = 2 GHz f = 900 MHz % % — — 57 45 — — ACLR Adjacent Channel Leakage Power Ratio[1,3] Offset BW = 5 MHz Offset BW = 10 MHz dBc dBc — — -68 -64 — — Notes: 1. Measurements obtained using production test board described in Figure 6. 2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) – Test Model 1 – Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) – Freq = 2140 MHz – Pin = -5 dBm – Chan Integ Bw = 3.84 MHz Input 50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss) Input Matching Circuit Γ_mag = 0.66 Γ_ang = -165° (1.8 dB loss) DUT Output Matching Circuit Γ_mag = 0.09 Γ_ang = 118° (1.1 dB loss) 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements. 3 2.2 pF 50 Ohm .02 λ 3.3 pF RF Input 110 Ohm .03 λ 110 Ohm .03 λ 50 Ohm .02 λ 4.7 pF RF Output DUT 22 nH 12 nH 15 Ohm 2.2 µF Drain DC Supply 100 pF Gate DC Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 Tuning Conditions The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA quiesent bias. The gamma load and source over frequency are shown in the table below: Freq (GHz) Gamma Source Mag Ang Gamma Load Mag Ang OIP3 (dBm) Gain (dB) P1dB (dBm) PAE (%) 0.9 0.616 -37.1 0.249 130.0 40.3 16.5 23.4 43.2 2.0 0.310 34.5 0.285 168.3 41.5 13.4 24.8 51.9 3.9 0.421 167.5 0.437 -161.6 41.5 10.5 24.7 42.8 5.8 0.402 -162.8 0.418 -134.1 41.0 7.9 24.7 36.6 4 45 45 40 40 40 35 30 3V 4V 5V 25 OIP3 (dBm) 45 OIP3 (dBm) OIP3 (dBm) ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 35 30 3V 4V 5V 25 75 90 105 120 135 150 90 105 135 150 165 180 75 17 12 16 16 10 15 15 13 12 14 13 3V 4V 5V 3V 4V 5V 11 10 120 135 150 165 180 90 105 120 135 150 165 180 Figure 12. Small Signal Gain vs. Ids and Vds at 2 GHz. 25 25 P1dB (dBM) 25 P1dB (dBM) 30 20 15 3V 4V 5V 105 120 135 105 150 165 180 Idq (mA) Figure 14. P1dB vs. Idq and Vds at 900 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. 75 90 105 120 135 120 135 150 165 180 150 20 15 3V 4V 5V 10 10 90 90 Figure 13. Small Signal Gain vs. Ids and Vds at 3.9 GHz. 30 75 75 Ids (mA) 30 15 180 3V 4V 5V Ids (mA) 20 165 6 0 75 Ids (mA) Figure 11. Small Signal Gain vs. Ids and Vds at 900 MHz. 150 2 10 105 135 4 12 11 120 8 GAIN (dB) 14 90 105 Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz. 17 75 90 Ids (mA) Figure 9. OIP3 vs. Ids and Vds at 2 GHz. GAIN (dB) GAIN (dB) Figure 8. OIP3 vs. Ids and Vds at 900 MHz. P1dB (dBM) 120 Ids (mA) Ids (mA) 5 3V 4V 5V 20 75 165 180 30 25 20 20 35 165 180 Idq (mA) Figure 15. P1dB vs. Idq and Vds at 2 GHz. 3V 4V 5V 10 75 90 105 120 135 150 165 180 Idq (mA) Figure 16. P1dB vs. Idq and Vds at 3.9 GHz. 60 60 50 50 50 40 40 40 30 20 30 20 3V 4V 5V 10 0 PAE (%) 60 PAE (%) PAE (%) ATF-531P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal OIP3 75 90 105 120 135 20 3V 4V 5V 10 150 165 0 180 75 90 105 Idq (mA) 165 0 180 30 3V 4V 5V 105 120 135 150 165 180 Ids (mA) 60 50 40 30 20 3V 4V 5V 10 90 105 120 135 105 150 165 180 Idq (mA) Figure 23. PAE vs. Idq and Vds at 5.8 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. 120 135 150 165 180 Figure 19. PAE vs. Idq and Vds at 3.9 GHz. 10 25 8 6 20 4 0 15 3V 4V 5V 75 90 105 120 135 150 165 180 Ids (mA) Figure 20. OIP3 vs. Ids and Vds at 5.8 GHz. 75 90 30 2 20 90 75 Idq (mA) P1dB (dBm) SMALL SIGNAL GAIN (dB) OIP3 (dBm) 35 25 PAE (%) 150 12 40 6 135 Figure 18. PAE vs. Idq and Vds at 2 GHz. 45 0 120 3V 4V 5V 10 Idq (mA) Figure 17. PAE vs. Idq and Vds at 900 MHz. 75 30 Figure 21. Small Signal Gain vs. Ids and Vds at 5.8 GHz. 10 3V 4V 5V 75 90 105 120 135 150 165 180 Idq (mA) Figure 22. P1dB vs. Idq and Vds at 5.8 GHz. ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3, continued GAIN (dB) OIP3 (dBm) 40 35 30 20 0.5 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) 80 70 60 PAE (%) 50 40 30 20 -40°C 25°C 85°C 10 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 27. PAE vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. 7 15 25 10 0 0.5 1.5 2.5 3.5 4.5 20 15 -40°C 25°C 85°C 5.5 FREQUENCY (GHz) Figure 24. OIP3 vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) 0 0.5 30 5 -40°C 25°C 85°C 25 20 P1dB (dBm) 45 Figure 25. Small Signal Gain vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) 10 0.5 -40°C 25°C 85°C 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 26. P1dB vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) ATF-531P8 Typical Scattering Parameters at 25°C, VDS = 4V, IDS = 180 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.626 0.704 0.761 0.794 0.815 0.824 0.834 0.840 0.845 0.848 0.854 0.857 0.853 0.853 0.855 0.858 0.864 0.871 0.869 0.880 0.883 0.884 0.874 0.874 0.877 0.884 0.894 0.896 0.898 0.918 -59.4 -97.4 -119.4 -133.8 -142.5 -149.6 -155.1 -159.7 -163.3 -166.4 -177.7 175.9 174.4 168.9 161.6 150.8 140.7 131.7 123.5 115.2 106.8 95.7 85.1 74.1 63.3 57.9 46.8 43.3 31.9 20.8 33.20 31.41 29.53 27.78 26.32 24.99 23.82 22.76 21.83 20.96 17.59 15.60 15.36 13.79 11.83 9.27 7.20 5.48 4.04 2.73 1.77 0.70 -0.34 -1.39 -2.52 -3.64 -4.81 -5.66 -7.25 -8.61 45.702 37.192 29.950 24.477 20.693 17.760 15.516 13.742 12.346 11.164 7.579 6.024 5.863 4.894 3.902 2.906 2.292 1.879 1.593 1.370 1.226 1.084 0.962 0.852 0.748 0.658 0.575 0.521 0.434 0.371 154.5 135.8 123.5 114.8 108.9 103.9 99.9 96.6 93.6 91.0 80.6 73.9 72.6 66.5 57.9 44.6 31.6 19.4 7.5 -4.3 -16.1 -29.0 -41.6 -52.8 -64.5 -74.6 -85.4 -93.6 -102.6 -110.5 -40.00 -35.92 -34.42 -33.56 -32.77 -32.77 -32.40 -32.40 -32.04 -32.04 -31.37 -30.75 -30.46 -29.90 -29.12 -27.74 -26.56 -25.35 -24.29 -23.35 -22.27 -21.41 -20.63 -19.91 -19.49 -19.02 -18.71 -18.49 -18.49 -18.94 0.010 0.016 0.019 0.021 0.023 0.023 0.024 0.024 0.025 0.025 0.027 0.029 0.030 0.032 0.035 0.041 0.047 0.054 0.061 0.068 0.077 0.085 0.093 0.101 0.106 0.112 0.116 0.119 0.119 0.113 62.6 48.8 39.1 33.7 30.0 27.4 25.8 24.6 24.2 23.8 23.5 24.4 24.9 25.8 26.6 26.5 24.3 21.2 17.4 12.6 7.0 -0.8 -8.8 -16.6 -24.6 -31.9 -39.8 -47.8 -55.1 -62.6 0.410 0.384 0.370 0.360 0.355 0.351 0.349 0.349 0.349 0.347 0.344 0.344 0.335 0.339 0.337 0.356 0.378 0.402 0.427 0.449 0.465 0.489 0.505 0.544 0.596 0.638 0.662 0.699 0.748 0.718 36.60 33.66 31.98 30.67 29.54 28.88 28.11 27.58 26.94 26.50 24.48 23.17 22.91 21.85 19.60 16.23 14.19 12.69 11.18 10.39 9.70 8.70 7.20 6.30 5.46 4.95 4.29 4.06 2.82 1.75 -44.4 -79.2 -101.8 -117.6 -127.1 -135.5 -141.9 -146.9 -151.1 -154.3 -165.8 -171.2 -171.8 -176.8 177.0 168.5 160.6 152.4 144.6 136.1 127.4 116.6 106.0 97.2 85.9 74.7 65.9 56.1 47.7 39.3 Typical Noise Parameters at 25°C, VDS = 4V, IDS = 180 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.50 0.59 0.60 0.72 0.81 0.90 1.01 1.10 1.13 1.34 1.48 1.58 1.68 1.89 2.15 2.34 0.20 0.25 0.35 0.40 0.57 0.61 0.63 0.67 0.70 0.72 0.75 0.76 0.80 0.84 0.82 0.85 166.00 169.00 171.00 173.00 -173.50 -167.70 -163.50 -158.20 -153.90 -142.70 -135.40 -133.30 -125.00 -116.10 -106.90 -95.10 0.041 0.044 0.036 0.039 0.029 0.033 0.041 0.054 0.068 0.139 0.229 0.278 0.470 0.860 1.170 2.010 Ga dB 28.26 24.27 24.15 21.14 20.07 18.73 16.91 15.86 15.12 13.08 12.04 11.82 10.69 9.97 8.96 8.09 40 MSG/MAG & |S21|2 (dB) Freq GHz 30 MSG 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 28. MSG/MAG & |S21|2 (dB) @ 4V, 180 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 8 ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 135 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.812 0.820 0.834 0.842 0.846 0.849 0.853 0.853 0.855 0.857 0.857 0.857 0.853 0.852 0.853 0.857 0.861 0.866 0.867 0.875 0.877 0.884 0.889 0.872 0.878 0.886 0.902 0.902 0.895 0.932 -56.4 -94.6 -117.3 -132.4 -141.4 -148.7 -154.4 -159.0 -162.7 -166.0 -177.3 176.2 174.7 169.2 161.7 150.8 140.9 131.6 123.5 115.1 106.9 95.6 85.3 73.9 63.6 57.6 47.2 43.7 32.1 20.6 34.07 31.95 29.87 27.99 26.46 25.08 23.88 22.80 21.85 20.97 17.58 15.57 15.34 13.77 11.80 9.24 7.18 5.45 4.02 2.72 1.76 0.71 -0.34 -1.33 -2.48 -3.57 -4.66 -5.56 -6.99 -8.75 50.547 39.582 31.147 25.104 21.036 17.954 15.628 13.809 12.376 11.186 7.568 6.007 5.847 4.879 3.889 2.896 2.285 1.873 1.589 1.367 1.224 1.085 0.962 0.858 0.752 0.663 0.585 0.527 0.447 0.365 151.8 132.2 120.2 111.8 106.3 101.6 97.9 94.8 92.0 89.6 79.7 73.3 72.0 66.0 57.6 44.6 31.8 19.7 7.9 -3.8 -15.3 -28.2 -41.0 -51.7 -64.0 -73.7 -84.8 -91.3 -101.9 -109.6 -38.42 -34.89 -33.15 -32.40 -32.04 -31.70 -31.70 -31.37 -31.37 -31.37 -30.75 -30.17 -29.90 -29.37 -28.64 -27.54 -26.38 -25.19 -24.29 -23.22 -22.16 -21.31 -20.63 -19.91 -19.58 -19.02 -18.79 -18.49 -18.49 -18.94 0.012 0.018 0.022 0.024 0.025 0.026 0.026 0.027 0.027 0.027 0.029 0.031 0.032 0.034 0.037 0.042 0.048 0.055 0.061 0.069 0.078 0.086 0.093 0.101 0.105 0.112 0.115 0.119 0.119 0.113 62.6 45.8 36.5 30.5 27.0 24.8 23.2 22.4 21.7 21.2 21.4 21.7 22.5 23.0 24.1 23.9 22.2 18.6 15.1 10.4 4.8 -2.6 -10.7 -18.3 -26.2 -33.3 -42.0 -49.2 -56.7 -63.9 0.449 0.425 0.397 0.385 0.379 0.375 0.372 0.372 0.371 0.369 0.366 0.366 0.347 0.351 0.358 0.375 0.396 0.417 0.440 0.459 0.474 0.496 0.511 0.548 0.600 0.640 0.663 0.698 0.746 0.716 36.25 33.42 31.51 30.20 29.25 28.39 27.79 27.09 26.61 26.17 24.17 22.87 22.62 21.57 20.22 16.28 14.11 12.50 11.10 10.16 9.40 8.69 7.93 6.24 5.55 5.05 4.93 4.37 2.93 2.36 -49.1 -85.0 -108.1 -123.7 -132.5 -140.4 -146.4 -151.0 -154.9 -157.9 -168.7 -174.2 -174.8 -179.7 174.2 165.7 157.8 149.6 141.8 133.4 124.8 114.1 103.7 95.1 84.0 73.1 64.4 54.7 46.5 38.2 Typical Noise Parameters, VDS = 4V, IDS = 135 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.18 0.26 0.35 0.40 0.51 0.56 0.60 0.73 0.83 1.03 1.15 1.20 1.34 1.57 1.78 1.83 0.20 0.25 0.35 0.40 0.47 0.51 0.56 0.60 0.66 0.68 0.72 0.72 0.78 0.83 0.82 0.85 166.00 169.00 171.00 173.00 177.20 -174.50 -169.30 -162.90 -157.60 -145.50 -137.10 -135.20 -126.70 -117.00 -107.90 -95.70 0.014 0.018 0.021 0.021 0.022 0.022 0.023 0.030 0.040 0.085 0.140 0.160 0.300 0.630 0.880 1.460 Ga dB 28.57 24.42 24.32 21.25 19.35 17.66 16.37 15.09 14.82 12.76 11.55 11.31 10.55 9.81 8.86 8.17 40 MSG/MAG & |S21|2 (dB) Freq GHz 30 MSG 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 29. MSG/MAG & |S21|2 (dB) @ 4V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 9 ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 75 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.930 0.889 0.876 0.867 0.862 0.858 0.857 0.856 0.854 0.857 0.853 0.853 0.848 0.846 0.848 0.850 0.853 0.861 0.861 0.868 0.873 0.875 0.881 0.871 0.873 0.885 0.891 0.912 0.895 0.933 -51.3 -88.3 -111.6 -127.3 -137.0 -144.7 -151.0 -156.0 -160.0 -163.5 -175.7 177.6 176.2 170.3 162.4 151.6 141.4 132.3 123.8 115.6 107.1 95.8 85.6 74.2 63.7 57.0 47.0 43.7 32.2 21.2 33.70 31.65 29.58 27.71 26.18 24.81 23.62 22.54 21.59 20.72 17.33 15.33 15.09 13.52 11.55 8.98 6.93 5.22 3.78 2.50 1.51 0.50 -0.57 -1.56 -2.65 -3.80 -4.72 -5.76 -7.15 -8.66 48.399 38.230 30.121 24.294 20.379 17.405 15.165 13.404 12.005 10.859 7.351 5.839 5.681 4.742 3.780 2.813 2.220 1.824 1.546 1.334 1.190 1.059 0.937 0.836 0.737 0.646 0.581 0.515 0.439 0.369 152.3 132.6 120.6 112.2 106.6 101.9 98.2 95.0 92.2 89.8 79.8 73.3 72.0 66.0 57.5 44.3 31.5 19.4 7.5 -4.3 -15.9 -28.8 -41.2 -52.5 -63.9 -74.0 -85.2 -93.5 -102.3 -110.5 -37.08 -32.77 -31.37 -30.75 -30.46 -30.17 -29.90 -29.90 -29.63 -29.63 -29.12 -28.87 -28.64 -28.18 -27.74 -26.94 -25.85 -25.04 -24.01 -23.22 -22.16 -21.41 -20.63 -20.00 -19.66 -19.17 -18.79 -18.56 -18.49 -19.02 0.014 0.023 0.027 0.029 0.030 0.031 0.032 0.032 0.033 0.033 0.035 0.036 0.037 0.039 0.041 0.045 0.051 0.056 0.063 0.069 0.078 0.085 0.093 0.100 0.104 0.110 0.115 0.118 0.119 0.112 63.6 46.8 36.1 29.5 25.9 23.1 21.1 19.9 18.3 18.2 16.3 16.5 16.7 17.0 17.0 16.7 15.4 12.9 9.8 5.5 0.4 -6.6 -13.8 -21.4 -28.8 -36.3 -43.7 -51.7 -58.5 -65.8 0.524 0.467 0.436 0.415 0.405 0.397 0.392 0.390 0.387 0.384 0.380 0.379 0.360 0.363 0.369 0.385 0.405 0.426 0.447 0.467 0.481 0.501 0.515 0.553 0.604 0.644 0.666 0.700 0.748 0.718 35.39 32.21 30.48 29.23 28.32 27.49 26.76 26.22 25.61 25.17 23.22 22.10 21.86 20.85 19.65 16.29 13.90 12.31 10.85 9.85 9.15 8.19 7.40 6.12 5.28 4.89 4.38 5.43 2.90 2.74 -45.7 -80.7 -103.2 -119.1 -128.4 -136.8 -143.2 -148.2 -152.3 -155.6 -167.2 -173.2 -173.8 -179.0 174.6 165.7 157.5 149.2 141.3 132.8 124.1 113.3 102.9 94.5 83.4 72.5 63.7 54.2 46.0 37.8 Typical Noise Parameters, VDS = 4V, IDS = 75 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.15 0.20 0.22 0.30 0.36 0.44 0.50 0.55 0.63 0.80 0.90 0.91 1.14 1.24 1.49 1.61 0.10 0.15 0.20 0.30 0.35 0.43 0.47 0.58 0.60 0.67 0.72 0.72 0.71 0.74 0.74 0.76 130.00 135.00 143.00 148.00 154.10 168.70 179.30 -170.80 -164.80 -150.90 -140.80 -139.50 -129.10 -119.90 -109.70 -97.30 0.016 0.019 0.019 0.022 0.024 0.022 0.022 0.019 0.024 0.050 0.095 0.100 0.180 0.285 0.460 0.720 Ga dB 27.97 23.50 23.02 20.07 17.85 16.35 15.29 14.11 14.01 11.92 11.00 10.56 9.80 9.31 8.41 7.73 40 MSG/MAG & |S21|2 (dB) Freq GHz 30 MSG 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 30. MSG/MAG & |S21|2 (dB) @ 4V, 75 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 10 ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.805 0.815 0.831 0.839 0.844 0.846 0.850 0.852 0.855 0.854 0.855 0.857 0.851 0.851 0.852 0.857 0.859 0.870 0.867 0.877 0.881 0.885 0.892 0.875 0.883 0.886 0.913 0.908 0.891 0.928 -56.0 -94.0 -116.9 -131.7 -140.9 -148.3 -154.0 -158.7 -162.5 -165.6 -177.1 176.3 174.9 169.4 161.8 151.1 141.0 131.8 123.6 115.6 106.7 95.6 85.2 74.2 63.8 57.9 47.4 43.1 32.2 20.6 34.11 32.03 29.97 28.10 26.58 25.20 24.00 22.93 21.98 21.10 17.71 15.71 15.46 13.89 11.92 9.35 7.30 5.57 4.11 2.80 1.82 0.75 -0.30 -1.33 -2.49 -3.58 -4.78 -5.81 -6.99 -8.64 50.734 39.967 31.517 25.418 21.322 18.207 15.852 14.014 12.559 11.351 7.681 6.099 5.931 4.946 3.943 2.935 2.318 1.899 1.605 1.381 1.233 1.090 0.966 0.858 0.751 0.662 0.577 0.512 0.447 0.370 152.1 132.6 120.5 112.1 106.4 101.8 98.0 94.8 92.0 89.6 79.5 73.0 71.7 65.6 57.1 43.9 30.9 18.5 6.5 -5.2 -17.0 -30.1 -42.9 -54.3 -65.9 -76.4 -86.8 -94.4 -105.1 -112.1 -39.17 -34.89 -33.56 -32.77 -32.40 -32.04 -31.70 -31.70 -31.70 -31.37 -31.06 -30.46 -30.17 -29.63 -29.12 -27.74 -26.56 -25.51 -24.44 -23.48 -22.38 -21.41 -20.72 -20.00 -19.66 -19.09 -18.71 -18.56 -18.49 -18.86 0.011 0.018 0.021 0.023 0.024 0.025 0.026 0.026 0.026 0.027 0.028 0.030 0.031 0.033 0.035 0.041 0.047 0.053 0.060 0.067 0.076 0.085 0.092 0.100 0.104 0.111 0.116 0.118 0.119 0.114 62.6 46.6 36.3 30.7 27.2 24.9 23.3 22.3 21.6 20.9 21.1 22.3 22.3 23.3 24.3 24.4 22.8 19.7 16.3 11.8 6.1 -1.3 -9.1 -17.0 -24.8 -31.8 -40.3 -47.8 -54.9 -62.6 0.468 0.419 0.387 0.364 0.354 0.346 0.342 0.339 0.337 0.335 0.331 0.331 0.336 0.315 0.323 0.343 0.367 0.391 0.417 0.440 0.458 0.482 0.500 0.540 0.593 0.636 0.660 0.699 0.747 0.717 36.64 33.46 31.76 30.43 29.49 28.62 27.85 27.32 26.84 26.24 24.38 23.08 22.82 21.76 19.82 16.43 14.19 12.82 11.24 10.41 9.75 8.94 8.31 6.52 5.87 5.23 6.01 4.78 2.98 2.41 -45.2 -79.7 -102.0 -117.9 -127.0 -135.4 -141.6 -146.5 -150.5 -153.9 -165.0 -170.4 -170.9 -175.8 178.2 169.9 162.1 154.0 146.2 137.7 129.1 118.1 107.5 98.6 87.1 75.8 66.8 57.0 48.4 39.9 Typical Noise Parameters, VDS = 5V, IDS = 135 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.45 0.48 0.50 0.55 0.65 0.70 0.77 0.84 0.90 1.06 1.20 1.19 1.40 1.52 1.75 1.88 0.20 0.32 0.35 0.40 0.46 0.49 0.55 0.58 0.62 0.66 0.69 0.69 0.77 0.81 0.82 0.85 154.00 160.00 166.00 170.00 177.40 -175.10 -168.90 -162.60 -158.20 -145.80 -137.30 -135.40 -126.50 -117.90 -107.50 -95.60 0.037 0.032 0.030 0.030 0.030 0.032 0.031 0.037 0.043 0.085 0.140 0.150 0.320 0.550 0.890 1.530 Ga dB 28.85 25.13 24.43 21.26 19.38 17.90 16.33 15.23 14.60 12.66 11.60 11.38 10.55 9.84 9.05 8.29 40 MSG/MAG & |S21|2 (dB) Freq GHz 30 MSG 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) 2 Figure 31. MSG/MAG & |S21| (dB) @ 5V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 11 ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS = 135 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.823 0.826 0.842 0.846 0.851 0.850 0.855 0.856 0.859 0.857 0.857 0.858 0.855 0.855 0.854 0.858 0.860 0.868 0.866 0.877 0.876 0.880 0.883 0.874 0.878 0.884 0.906 0.907 0.893 0.925 -57.1 -95.6 -118.2 -133.1 -142.0 -149.2 -154.9 -159.5 -163.2 -166.3 -177.7 175.8 174.4 168.8 161.4 150.7 140.4 131.4 123.2 114.8 106.3 95.1 84.7 73.6 62.9 56.9 46.7 42.9 32.2 20.7 33.96 31.82 29.66 27.75 26.21 24.83 23.62 22.55 21.59 20.71 17.32 15.31 15.08 13.51 11.54 8.98 6.92 5.21 3.79 2.52 1.57 0.56 -0.46 -1.51 -2.56 -3.54 -4.70 -5.61 -6.80 -8.38 49.888 38.989 30.415 24.416 20.452 17.443 15.178 13.405 12.012 10.853 7.342 5.828 5.676 4.738 3.774 2.812 2.219 1.821 1.547 1.337 1.198 1.066 0.948 0.840 0.745 0.665 0.582 0.524 0.457 0.381 151.3 131.6 119.6 111.4 105.9 101.4 97.7 94.7 92.0 89.6 79.9 73.6 72.3 66.4 58.2 45.3 32.8 21.0 9.4 -2.0 -13.7 -26.0 -38.2 -49.6 -61.1 -71.0 -80.8 -88.0 -99.8 -107.2 -37.72 -33.98 -32.77 -32.04 -31.70 -31.37 -31.37 -31.06 -31.06 -30.75 -30.46 -29.90 -29.37 -29.12 -28.40 -27.13 -26.02 -24.88 -23.88 -22.85 -21.83 -21.11 -20.35 -19.83 -19.41 -18.94 -18.71 -18.49 -18.42 -18.86 0.013 0.020 0.023 0.025 0.026 0.027 0.027 0.028 0.028 0.029 0.030 0.032 0.034 0.035 0.038 0.044 0.050 0.057 0.064 0.072 0.081 0.088 0.096 0.102 0.107 0.113 0.116 0.119 0.120 0.114 62.6 45.7 36.0 30.1 26.8 24.4 22.9 22.1 21.4 21.1 21.0 21.6 22.1 22.6 22.8 22.7 20.7 17.2 13.4 8.5 2.6 -5.0 -12.9 -20.7 -28.5 -35.9 -43.9 -51.4 -58.7 -66.3 0.427 0.418 0.421 0.420 0.419 0.419 0.419 0.420 0.421 0.419 0.418 0.418 0.410 0.403 0.409 0.423 0.440 0.457 0.475 0.490 0.502 0.519 0.530 0.566 0.613 0.652 0.670 0.704 0.747 0.717 35.84 32.90 31.21 29.90 28.96 28.10 27.50 26.80 26.32 25.73 23.89 22.60 22.23 21.32 19.97 16.15 13.82 12.31 10.81 10.00 9.09 8.20 7.31 6.06 5.32 4.87 4.76 4.29 2.90 2.20 -55.1 -92.8 -115.9 -130.7 -139.0 -146.4 -151.9 -156.1 -159.7 -162.6 -172.9 -178.2 -179.1 176.0 169.8 161.0 152.8 144.4 136.6 128.0 119.3 108.7 98.4 90.7 79.7 69.3 60.8 51.6 43.7 35.8 Typical Noise Parameters, VDS = 3V, IDS = 135 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.25 0.30 0.30 0.36 0.45 0.52 0.66 0.70 0.87 1.02 1.13 1.24 1.34 1.58 1.78 1.88 0.20 0.25 0.35 0.40 0.46 0.52 0.56 0.62 0.65 0.67 0.71 0.73 0.82 0.83 0.81 0.83 166.00 169.00 171.00 173.00 176.80 -174.70 -169.80 -162.80 -157.90 -145.70 -136.80 -135.10 -126.20 -116.90 -107.50 -95.40 0.020 0.022 0.018 0.019 0.020 0.021 0.025 0.028 0.042 0.082 0.140 0.175 0.380 0.645 0.870 1.350 28.47 24.36 24.24 21.17 19.30 18.08 16.26 15.33 14.62 12.52 11.53 11.40 10.57 9.67 8.59 7.76 40 MSG/MAG & |S21|2 (dB) Freq GHz 30 MSG 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 32. MSG/MAG & |S21|2 (dB) @ 3V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 12 Device Models Refer to Agilent’s Web Site www.agilent.com/view/rf Ordering Information Part Number No. of Devices Container ATF-531P8-TR1 3000 7” Reel ATF-531P8-TR2 10000 13”Reel ATF-531P8-BLK 100 antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 D pin1 P pin1 8 1 2 e E1 3 R 3PX 4 5 Top View Bottom View A1 A A2 End View Side View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN. 0.70 0 0.225 1.9 0.65 1.9 1.45 0.20 0.35 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC 0.25 0.40 DIMENSIONS ARE IN MILLIMETERS 13 E 6 b L A 7 MAX. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 0.30 0.45 PCB Land Pattern and Stencil Design 2.72 (107.09) 2.80 (110.24) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 φ0.20 (7.87) 0.50 (19.68) 0.50 (19.68) Solder mask RF transmission line 0.32 (12.79) PIN 1 1.54 (60.61) 1.60 (62.99) 0.28 (10.83) + 0.60 (23.62) 0.25 (9.74) 0.63 (24.80) 0.72 (28.35) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) Stencil Layout (top view) PCB Land Pattern (top view) Device Orientation 4 mm REEL 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 14 3PX 3PX 3PX 3PX Tape Dimensions P0 P D P2 E F W + + D1 Tt t1 K0 10° Max 10° Max A0 DESCRIPTION CAVITY PERFORATION CARRIER TAPE COVER TAPE DISTANCE 15 B0 SYMBOL SIZE (mm) SIZE (inches) LENGTH A0 2.30 ± 0.05 0.091 ± 0.004 WIDTH B0 2.30 ± 0.05 0.091 ± 0.004 DEPTH K0 1.00 ± 0.05 0.039 ± 0.002 PITCH P 4.00 ± 0.10 0.157 ± 0.004 BOTTOM HOLE DIAMETER D1 1.00 + 0.25 0.039 + 0.002 DIAMETER D 1.50 ± 0.10 0.060 ± 0.004 PITCH P0 4.00 ± 0.10 0.157 ± 0.004 POSITION E 1.75 ± 0.10 0.069 ± 0.004 WIDTH W THICKNESS t1 8.00 + 0.30 8.00 – 0.10 0.254 ± 0.02 0.315 ± 0.012 0.315 ± 0.004 0.010 ± 0.0008 WIDTH C 5.4 ± 0.10 0.205 ± 0.004 TAPE THICKNESS Tt 0.062 ± 0.001 0.0025 ± 0.0004 CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788 6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright © 2002 Agilent Technologies, Inc. Obsoletes 5988-8407EN (12/02) July 31, 2003 5988-9990EN