Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Single Supply Enhancement Mode Technology [1] • Very low noise figure The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range. Surface Mount Package SOT-343 • 400 micron gate width • Low cost surface mount small plastic package SOT-343 (4 lead SC-70) • Tape-and-Reel packaging option available Specifications 2 GHz; 2.7V, 10 mA (Typ.) Pin Connections and Package Marking DRAIN SOURCE 5Fx Description Agilent Technologies’s ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. • Excellent uniformity in product specifications • 24.2 dBm output 3rd order intercept SOURCE GATE • 14.4 dBm output power at 1 dB gain compression • 0.6 dB noise figure • 17.7 dB associated gain Note: Top View. Package marking provides orientation and identification “5F” = Device Code “x” = Date code character identifies month of manufacture. Applications • Low noise amplifier for cellular/ PCS handsets • LNA for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-PHEMT for other ultra low noise applications Note: 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. 1 ATF-55143 Absolute Maximum Rating s [1] Symbol Parameter Units Absolute Maximum VDS Drain-Source Voltage[2] V 5 VGS Gate-Source Voltage[2] V -5 to 1 VGD Gate Drain Voltage[2] V 5 IDS Drain Current [2] mA 100 IGS Gate Current [5] mA 1 Pdiss Total Power Dissipation[3] mW 270 Pin max. RF Input Power[5] dBm 7 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 θjc Thermal Resistance [4] °C/W 235 ESD (Human Body Model) V 200 ESD (Machine Model) V 25 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25°C. Derate 4.3 mW/ °C for TL > 87 °C. 4. Thermal resistance measured using 150°C Liquid Crystal Measurement method. 5. Device can safely handle +3 dBm RF Input Power as long asIGS is limited to 1 mA. IGS at P1dB drive level is bias circuit dependent. See applications section for additional information. 70 0.7 V 60 IDS (mA) 50 40 0.6 V 30 0.5 V 20 10 0.4 V 0.3V 0 0 1 2 3 4 VDS (V) 5 6 7 Figure 1. Typical I-V Curves. (V GS = 0.1 V per step) Product Consistency Distribution Charts [6, 7] 300 Cpk = 2.02 Stdev = 0.36 250 200 240 Cpk = 1.023 Stdev = 0.28 Cpk = 3.64 Stdev = 0.031 200 160 200 160 120 -3 Std -3 Std 150 +3 Std +3 Std 120 80 100 80 40 50 0 40 0 22 23 24 OIP3 (dBm) Figure 2. OIP3 @ 2.7 V, 10 mA. LSL = 22.0, Nominal = 24.2 25 26 15 16 17 GAIN (dB) 18 Figure 3. Gain @ 2.7 V, 10 mA. USL = 18.5, LSL = 15.5, Nominal = 17.7 19 0 0.43 0.53 0.63 0.73 0.83 0.93 NF (dB) Figure 4. NF @ 2.7 V, 10 mA. USL = 0.9, Nominal = 0.6 Notes: 6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device Units Min. Typ.[2] Max. Vds = 2.7V, Ids = 10 mA V 0.3 0.47 0.65 Threshold Voltage Vds = 2.7V, Ids = 2 mA V 0.18 0.37 0.53 Idss Saturated Drain Current Vds = 2.7V, Vgs = 0V µA — 0.1 3 Gm Transconductance Vds = 2.7V, gm = ∆Idss/ ∆Vgs; ∆Vgs = 0.75 – 0.7 = 0.05V mmho 110 220 285 Igss Gate Leakage Current Vgd = Vgs = -2.7V µA — — 95 NF Noise Figure [1] f = 2 GHz f = 900 MHz Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA dB dB — — 0.6 0.3 0.9 — Ga Associated Gain [1] f = 2 GHz f = 900 MHz Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA dB dB 15.5 — 17.7 21.6 18.5 — OIP3 Output 3rd Order Intercept Point [1] f = 2 GHz f = 900 MHz Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA dBm dBm 22.0 — 24.2 22.3 — — P1dB 1dB Compressed Output Power [1] f = 2 GHz f = 900 MHz Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA dBm dBm — — 14.4 14.2 — — Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Notes: 1. Measurements obtained using production test board described in Figure 5. 2. Typical values determined from a sample size of 500 parts from 6 wafers. Input 50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss) Input Matching Circuit Γ_mag = 0.4 Γ_ang = 83° (0.3 dB loss) DUT Output Matching Circuit Γ_mag = 0.5 Γ_ang = -26° (1.2 dB loss) 50 Ohm Transmission Line Including Drain Bias T (0.3 dB loss) Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements. 3 ATF-55143 Typical Performance Curves 20 Fmin (dB) GAIN (dB) 25 15 1.2 27 1.0 25 0.8 23 OIP3 (dBm) 30 0.6 0.4 10 19 0.2 2V, 10 mA 2.7V, 10 mA 5 17 2V, 10 mA 2.7V, 10 mA 1 2 3 4 5 6 2V, 10 mA 2.7V, 10 mA 15 0 0 21 0 1 FREQUENCY (GHz) 2 3 4 5 6 0 1 FREQUENCY (GHz) Figure 6. Gain vs. Bias over Frequency.[1] 16 10 14 3 4 5 6 Figure 8. OIP3 vs. Bias over Frequency.[1] Figure 7. Fmin vs. Frequency and Bias. 15 2 FREQUENCY (GHz) 21 5 19 GAIN (dB) P1dB (dBm) IIP3 (dBm) 20 12 18 17 10 0 2V, 10 mA 2.7V, 10 mA 8 -5 0 1 2 3 4 5 6 15 0 1 FREQUENCY (GHz) 3 4 5 6 0 16 33 14 0.50 31 12 0.45 29 10 0.40 0.35 0.30 10 15 20 25 30 27 25 Ids (mA) Figure 12. Fmin vs. Ids and Vds at 2 GHz. Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz were made using a double 19 20 25 30 35 8 4 2V 2.7V 3V 21 35 15 6 23 2V 2.7V 3V 0.25 IIP3 (dBm) 35 0.55 5 10 Figure 11. Gain vs. Ids and Vds at 2 GHz.[1] 0.60 0 5 Ids (mA) Figure 10. P1dB vs. Bias over Frequency.[1,2] OIP3 (dBm) Fmin (dB) 2 FREQUENCY (GHz) Figure 9. IIP3 vs. Bias over Frequency.[1] 0.20 2V 2.7V 3V 16 2V, 10 mA 2.7V, 10 mA 0 5 10 15 20 25 30 35 Ids (mA) Figure 13. OIP3 vs. Ids and Vds at 2 GHz.[1] stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias 4 2V 2.7V 3V 2 0 0 5 10 15 20 25 30 35 Ids (mA) Figure 14. IIP3 vs. Ids and Vds at 2 GHz.[1] point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15mA as a P1dB of +14.5 dBm is approached. ATF-55143 Typical Performance Curves, continued 17 25 16 24 15 23 0.35 14 13 12 22 21 2V 2.7V 3V 0 5 10 15 20 25 30 2V 2.7V 3V 19 0.20 0.10 18 35 0 5 10 15 20 25 30 35 0 40 Ids (mA) Figure 15. P1dB vs. Idsq and Vds at 2 GHz.[1,2] Figure 16. Gain vs. Ids and Vds at 900 MHz. [1] 17 30 6 16 28 5 15 IIP3 (dBm) 3 2 1 20 2V 2.7V 3V 18 16 P1dB (dBm) 4 22 0 5 10 15 20 25 30 2V 2.7V 3V -1 Ids (mA) Figure 18. OIP3 vs. Ids and Vds at 900 MHz. [1] Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz were made using a double -2 15 20 25 0 5 10 15 20 35 13 12 25 30 2V 2.7V 3V 10 35 Ids (mA) Figure 19. IIP3 vs. Ids and Vds at 900 MHz. [1] stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias 5 30 14 11 0 35 10 Figure 17. Fmin vs. Ids and Vds at 900 MHz. 7 24 5 Ids (mA) 32 26 2V 2.7V 3V 0.15 Idsq (mA) OIP3 (dBm) 0.25 20 11 10 Fmin (dB) GAIN (dB) P1dB (dBm) 0.30 9 0 5 10 15 20 25 30 35 Idsq (mA) Figure 20. P1dB vs. Idsq and Vds at 900 MHz. [1,2] point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached. ATF-55143 Typical Performance Curves, continued 28 2.0 25°C -40°C 85°C 24 18 OIP3 (dBm) 1.5 Fmin (dB) 23 GAIN (dB) 25 25°C -40°C 85°C 1.0 23 22 21 13 25°C -40°C 85°C 0.5 20 8 0 0 1 2 3 4 5 6 19 0 1 FREQUENCY (GHz) 2 3 4 5 6 FREQUENCY (GHz) Figure 21. Gain vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1] 1 2 3 4 5 6 FREQUENCY (GHz) Figure 22. Fmin vs. Frequency and Temperature at 2.7V, 10 mA. 16 0 Figure 23. OIP3 vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1] 16 14 15 12 8 P1dB (dBm) IIP3 (dBm) 10 6 4 2 14 13 12 25°C -40°C 85°C 0 -2 25°C -40°C 85°C 11 -4 -6 10 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 24. IIP3 vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1] Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz were made using a double 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 25. P1dB vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1,2] stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias 6 point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached. ATF-55143 Typical Scattering Parameters, VDS = 2V, IDS = 10 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. Mag. S12 Ang. Mag. S22 Ang. MSG/MAG dB 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 0.998 0.963 0.894 0.879 0.793 0.731 0.718 0.657 0.611 0.561 0.558 0.566 0.583 0.601 0.636 0.708 0.76 0.794 0.819 0.839 0.862 0.853 0.868 -6.5 -31.7 -54.7 -60.1 -84.1 -100.8 -104.7 -123.7 -141.8 -177.5 149.4 122.5 99.7 77.7 57.5 38.3 21.8 7.6 -7.8 -23.6 -37.9 -51.0 -60.1 20.78 20.37 19.57 19.32 18.07 17.11 16.86 15.79 14.80 13.10 11.52 10.06 8.78 7.62 6.63 5.66 4.45 3.32 2.29 1.27 -0.19 -1.83 -3.25 10.941 10.434 9.516 9.252 8.009 7.166 6.970 6.159 5.494 4.517 3.768 3.183 2.748 2.404 2.147 1.919 1.670 1.465 1.302 1.157 0.978 0.810 0.688 174.9 154.8 137.1 133.0 115.2 102.8 100.1 86.6 74.2 51.0 29.3 9.4 -9.2 -27.4 -45.3 -64.6 -83.1 -100.2 -117.9 -136.7 -155.2 -171.8 173.9 0.006 0.029 0.048 0.051 0.066 0.075 0.077 0.084 0.090 0.098 0.102 0.104 0.106 0.105 0.110 0.117 0.119 0.121 0.121 0.122 0.115 0.109 0.107 86.1 70.2 56.9 54 41.5 33.6 31.8 23.7 16.5 3.6 -8.3 -18.4 -28.5 -38.4 -44.7 -56.6 -68.2 -79.3 -91.4 -104.4 -117.7 -129.4 -139.9 0.796 0.762 0.711 0.693 0.622 0.570 0.559 0.503 0.446 0.343 0.269 0.224 0.189 0.140 0.084 0.08 0.151 0.217 0.262 0.327 0.431 0.522 0.588 -4.2 -20.4 -34.4 -37.3 -49.6 -57.1 -58.7 -66.3 -73 -87.6 -104.4 -120.4 -137.3 -149.3 -170 109.3 64.5 40.8 20.8 0.5 -16.4 -28.6 -41.6 32.61 25.56 22.97 22.59 20.84 19.80 19.57 18.65 17.86 16.64 15.68 10.94 9.33 8.14 7.72 8.03 7.90 7.66 7.36 7.05 6.52 5.22 4.90 18.0 0.911 -70.3 -4.44 0.601 158.5 0.102 -153.2 0.641 -55.8 5.94 Typical Noise Parameters, VDS = 2V, IDS = 10 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 0.21 0.26 0.27 0.42 0.43 0.50 0.59 0.73 0.92 1.04 1.06 1.22 1.42 1.57 1.71 0.65 0.60 0.55 0.55 0.54 0.45 0.40 0.26 0.21 0.24 0.23 0.28 0.33 0.43 0.54 17.5 22.6 27.0 49.4 51.7 61.5 78.1 111.9 172.5 -151.5 -144.5 -107.1 -75.5 -51.5 -33.3 0.13 0.12 0.12 0.11 0.11 0.10 0.09 0.07 0.06 0.07 0.08 0.14 0.24 0.38 0.57 24.84 22.86 22.39 18.77 18.42 17.14 15.50 13.62 12.05 11.28 11.12 10.45 9.84 9.10 8.03 35 30 MSG/MAG and |S 21 | 2 (dB) Freq GHz 25 20 MSG 15 10 |S 21 | 5 2 0 -5 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 26. MSG/MAG and |S 21| 2 vs. Frequency at 2V, 10 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference planeis at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 7 ATF-55143 Typical Scattering Parameters, VDS = 2V, IDS = 15 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. Mag. S12 Ang. Mag. S22 Ang. MSG/MAG dB 0.1 0.5 0.997 0.953 -7.1 -34.5 22.33 21.82 13.074 12.333 174.4 153.0 0.006 0.027 85.7 69.4 0.752 0.712 -4.6 -22.1 33.38 26.60 0.9 1.0 0.873 0.856 -58.8 -64.6 20.86 20.58 11.042 10.693 134.4 130.3 0.044 0.047 56.3 53.3 0.654 0.636 -36.7 -39.6 24.00 23.57 1.5 1.9 0.759 0.695 -89.3 -106.2 19.14 18.06 9.059 7.998 112.2 100.0 0.060 0.068 41.6 34.4 0.560 0.509 -51.8 -59.0 21.79 20.70 2.0 2.5 0.681 0.621 -110.2 -129.3 17.8 16.62 7.762 6.773 97.2 83.9 0.070 0.076 32.8 25.6 0.498 0.443 -60.5 -67.5 20.45 19.50 3.0 4.0 0.578 0.536 -147.4 177.3 15.54 13.71 5.985 4.850 71.8 49.4 0.082 0.091 19.4 7.9 0.390 0.295 -73.6 -87.3 18.63 17.27 5.0 6.0 0.541 0.554 145.1 119.1 12.09 10.59 4.020 3.384 28.4 9.0 0.096 0.101 -3.0 -12.7 0.225 0.183 -104.3 -120.8 16.22 10.47 7.0 8.0 0.574 0.594 97.0 75.5 9.3 8.13 2.917 2.549 -9.1 -27.0 0.105 0.106 -23.0 -33.1 0.150 0.101 -138.4 -149.7 9.34 8.32 9.0 10.0 0.63 0.703 55.9 37.3 7.12 6.14 2.271 2.028 -44.6 -63.5 0.113 0.121 -40.4 -53.2 0.047 0.078 -175.2 82.0 7.99 8.33 11.0 12.0 0.757 0.793 21.1 7.1 4.92 3.79 1.762 1.547 -81.7 -98.5 0.123 0.125 -65.3 -76.9 0.162 0.231 51.1 31.3 8.19 7.98 13.0 14.0 0.818 0.841 -8.2 -23.8 2.77 1.76 1.376 1.225 -115.9 -134.3 0.125 0.125 -89.5 -102.7 0.275 0.339 12.8 -5.5 7.68 7.43 15.0 16.0 17.0 18.0 0.863 0.856 0.871 0.913 -38.1 -51.2 -60.2 -70.4 0.32 -1.29 -2.66 -3.8 1.038 0.862 0.736 0.646 -152.5 -168.8 177.0 161.7 0.118 0.111 0.109 0.105 -116.3 -128.0 -138.6 -151.9 0.438 0.524 0.586 0.636 -21.0 -32.0 -44.4 -58.1 6.85 5.58 5.27 6.28 Typical Noise Parameters, VDS = 2V, IDS = 15 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.21 0.627 18.7 0.1 25.41 0.9 1.0 1.9 0.25 0.26 0.4 0.56 0.53 0.51 23.6 27.3 49.7 0.1 0.1 0.09 23.47 23.02 19.44 2.0 0.41 0.5 52.6 0.09 19.09 2.4 3.0 3.9 0.48 0.57 0.7 0.41 0.35 0.22 62.3 80.4 118.4 0.09 0.08 0.06 17.81 16.17 14.25 5.0 0.86 0.2 -176.5 0.06 12.6 5.8 6.0 7.0 0.99 1.03 1.16 0.23 0.23 0.29 -140.5 -134.6 -99.3 0.08 0.08 0.14 11.77 11.6 10.86 8.0 9.0 10.0 1.35 1.49 1.62 0.35 0.43 0.54 -69.3 -47.9 -30.8 0.25 0.39 0.57 10.22 9.48 8.47 40 35 MSG/MAG and |S 21 | 2 (dB) Freq GHz 30 25 MSG 20 15 10 |S 21 | 2 5 0 -5 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 27. MSG/MAG and |S 21| 2 vs. Frequency at 2V, 15 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 8 ATF-55143 Typical Scattering Parameters, VDS = 2V, IDS = 20 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. Mag. S12 Ang. Mag. S22 Ang. MSG/MAG dB 0.1 0.997 -7.5 23.23 14.512 174.2 0.006 85.5 0.722 -4.8 33.38 0.5 0.9 0.947 0.858 -36.2 -61.3 22.66 21.59 13.582 12.011 151.8 132.8 0.026 0.041 69 56 0.679 0.618 -22.9 -37.7 26.60 24.00 1.0 0.839 -67.2 21.29 11.602 128.6 0.044 53.2 0.599 -40.6 23.57 1.5 0.738 -92.4 19.74 9.703 110.4 0.056 42.1 0.523 -52.5 21.79 1.9 2.0 0.673 0.659 -109.4 -113.5 18.59 18.32 8.5 8.238 98.3 95.5 0.063 0.065 35.5 34 0.474 0.463 -59.3 -60.7 20.70 20.45 2.5 0.599 -132.6 17.07 7.135 82.4 0.071 27.5 0.411 -67.1 19.50 3.0 4.0 0.558 0.521 -150.6 174.4 15.95 14.06 6.272 5.047 70.5 48.5 0.077 0.086 21.8 11.1 0.361 0.272 -72.7 -85.6 18.63 17.27 5.0 0.531 142.8 12.40 4.171 28 0.093 0.7 0.205 -102.3 16.22 6.0 7.0 0.546 0.568 117.4 95.6 10.89 9.60 3.505 3.021 8.9 -9 0.099 0.104 -9 -19.4 0.166 0.134 -118.7 -136.5 10.47 9.34 8.0 0.588 74.4 8.42 2.637 -26.7 0.106 -29.8 0.086 -146.2 8.32 9.0 10.0 11.0 0.625 0.699 0.754 55.2 36.8 20.9 7.41 6.43 5.21 2.348 2.097 1.823 -44.1 -62.9 -80.9 0.115 0.123 0.125 -37.5 -50.7 -63.2 0.032 0.077 0.165 -171.2 71.3 46 7.99 8.33 8.19 12.0 13.0 14.0 0.791 0.818 0.839 6.9 -8.2 -23.8 4.08 3.07 2.07 1.60 1.424 1.269 -97.5 -114.7 -133.1 0.127 0.128 0.127 -75.1 -87.8 -101.4 0.235 0.278 0.340 27.6 9.8 -8.1 7.98 7.68 7.43 15.0 16.0 0.864 0.858 -38.1 -51.1 0.65 -0.95 1.078 0.896 -151 -167.3 0.12 0.113 -114.9 -126.8 0.440 0.523 -22.8 -33.4 6.85 5.58 17.0 0.873 -60.2 -2.30 0.768 178.6 0.111 -137.5 0.583 -45.6 5.27 18.0 0.917 -70.4 -3.41 0.675 163.4 0.106 -150.9 0.632 -59 6.28 Typical Noise Parameters, VDS = 2V, IDS = 20 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 0.21 0.25 0.26 0.39 0.4 0.48 0.56 0.69 0.85 0.98 1.02 1.16 1.34 1.49 0.63 0.54 0.53 0.49 0.47 0.38 0.32 0.2 0.2 0.24 0.24 0.3 0.36 0.45 18.4 24.4 28.8 50.6 52.8 63.6 82 125.1 -167.2 -133.4 -128.4 -94.8 -66.4 -45.7 0.1 0.09 0.09 0.09 0.09 0.08 0.07 0.06 0.06 0.08 0.09 0.15 0.25 0.4 25.67 23.78 23.34 19.84 19.5 18.24 16.61 14.67 12.97 12.09 10.89 11.12 10.45 9.73 10.0 1.62 0.55 -28.6 0.6 8.8 40 35 MSG/MAG and |S 21 | 2 (dB) Freq GHz 30 25 20 MSG 15 10 5 |S 21 | 2 0 -5 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 28. MSG/MAG and |S 21| 2 vs. Frequency at 2V, 20 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 9 ATF-55143 Typical Scattering Parameters, VDS = 2.7V, IDS = 10 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. S12 Ang. Mag. S22 Ang. Mag. MSG/MAG dB Ang. 0.1 0.998 -6.4 20.86 11.044 174.9 0.006 86.2 0.819 -3.9 32.65 0.5 0.963 -31.2 20.46 10.549 155 0.026 70.4 0.786 -19.1 26.08 0.9 1.0 0.896 0.881 -53.8 -59.2 19.68 19.44 9.641 9.376 137.5 133.4 0.043 0.047 57.3 54.4 0.737 0.72 -32 -34.7 23.51 23.00 1.5 0.794 -83 18.21 8.133 115.6 0.06 42.2 0.651 -46 21.32 1.9 0.732 -99.5 17.25 7.284 103.3 0.068 34.4 0.602 -52.9 20.30 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.718 0.655 0.608 0.553 0.548 0.556 0.573 0.590 0.625 0.699 0.752 0.789 0.815 0.838 0.862 0.856 0.872 0.915 -103.4 -122.3 -140.2 -175.9 150.9 123.9 100.9 78.6 58.4 39.2 22.7 8.4 -7 -22.8 -37.2 -50.5 -59.7 -70 17.01 15.94 14.96 13.28 11.74 10.30 9.04 7.89 6.94 6.03 4.89 3.78 2.78 1.81 0.37 -1.27 -2.73 -3.96 7.087 6.267 5.599 4.615 3.862 3.272 2.83 2.481 2.224 2.002 1.755 1.546 1.378 1.231 1.044 0.864 0.730 0.634 100.6 87.1 74.8 51.7 30.2 10.3 -8.3 -26.5 -44.3 -63.6 -82.3 -99.8 -117.8 -137 -155.9 -173.3 171.9 156 0.07 0.076 0.082 0.089 0.092 0.094 0.096 0.096 0.102 0.112 0.115 0.12 0.122 0.124 0.119 0.113 0.111 0.107 32.6 24.8 17.9 5.6 -5.4 -14.6 -23.9 -32.8 -38 -49.7 -61.1 -72.4 -84.7 -98.3 -111.8 -124.4 -135.6 -149.4 0.592 0.538 0.485 0.39 0.321 0.280 0.247 0.204 0.152 0.098 0.112 0.167 0.211 0.274 0.387 0.491 0.568 0.628 -54.5 -61.3 -67.3 -80.1 -94.7 -109 -124.1 -134.3 -146.7 166.8 100 62.3 37 12.6 -7.6 -21.5 -35.9 -51.2 20.05 19.16 18.34 17.15 16.23 10.63 9.27 8.16 7.82 8.34 8.24 8.17 7.93 7.71 7.14 5.78 5.49 6.84 Typical Noise Parameters, VDS = 2.7V, IDS = 10 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 0.2 0.26 0.27 0.39 0.4 0.48 0.57 0.72 0.88 1.02 1.04 1.19 1.39 1.54 1.65 0.64 0.59 0.54 0.54 0.54 0.45 0.39 0.26 0.2 0.22 0.21 0.26 0.32 0.41 0.53 19 22.7 26 48.3 49.9 59.8 75.6 108.7 167.5 -154.8 -147.8 -107.9 -75 -51.6 -33.6 0.12 0.12 0.12 0.11 0.11 0.1 0.09 0.07 0.06 0.07 0.08 0.13 0.23 0.36 0.54 25.29 23.24 22.76 19.01 18.66 17.35 15.69 13.79 12.26 11.52 11.37 10.76 10.2 9.48 8.38 35 30 MSG/MAG and |S 21 | 2 (dB) Freq GHz 25 20 MSG 15 10 5 |S 21 | 2 0 -5 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 29. MSG/MAG and |S 21| 2 vs. Frequency at 2.7V, 10 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 10 ATF-55143 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. Mag. S12 Ang. Mag. S22 Ang. MSG/MAG dB 0.1 0.5 0.9 1.0 1.5 0.997 0.947 0.860 0.840 0.739 -7.4 -35.8 -60.8 -66.6 -91.7 23.29 22.72 21.67 21.37 19.83 14.603 13.682 12.116 11.705 9.802 174.2 152 133 128.8 110.6 0.005 0.024 0.038 0.041 0.051 85.8 69.2 56.2 53.4 42.4 0.755 0.713 0.652 0.633 0.56 -4.4 -21.1 -34.6 -37.3 -48 34.65 27.56 25.04 24.56 22.84 1.9 2.0 2.5 3.0 4.0 5.0 6.0 0.672 0.658 0.597 0.554 0.515 0.523 0.538 -108.6 -112.7 -131.7 -149.7 175.4 143.7 118.2 18.68 18.41 17.16 16.04 14.17 12.55 11.06 8.587 8.323 7.21 6.341 5.114 4.239 3.572 98.5 95.8 82.7 70.9 49.1 28.6 9.6 0.057 0.059 0.065 0.069 0.078 0.084 0.09 36 34.5 28.4 23 13.3 3.7 -5 0.513 0.503 0.455 0.409 0.328 0.267 0.232 -54 -55.3 -60.9 -65.7 -76.7 -90.7 -104.8 21.78 21.49 20.45 19.63 18.17 17.03 10.28 7.0 8.0 0.559 0.579 96.4 75.2 9.78 8.62 3.084 2.699 -8.4 -25.9 0.095 0.098 -14.7 -24.2 0.201 0.162 -119.6 -127.4 9.37 8.50 9.0 10.0 11.0 12.0 13.0 14.0 15.0 0.615 0.690 0.748 0.787 0.816 0.841 0.867 56 37.7 21.7 7.9 -7.3 -22.9 -37.3 7.65 6.73 5.57 4.48 3.5 2.55 1.15 2.413 2.171 1.9 1.675 1.496 1.341 1.142 -43.3 -62.1 -80.3 -97.3 -114.9 -133.5 -152.1 0.107 0.117 0.122 0.126 0.128 0.13 0.124 -31 -44 -56.4 -68.5 -81.4 -95.1 -109.2 0.113 0.055 0.096 0.164 0.210 0.277 0.386 -136.5 160.9 75.9 45.5 23.7 3 -14.3 8.31 8.81 8.85 8.75 8.62 8.48 7.84 16.0 17.0 0.862 0.877 -50.5 -59.7 -0.44 -1.83 0.95 0.81 -169 176.3 0.118 0.116 -121.9 -133.3 0.483 0.555 -26.3 -39.5 6.39 6.08 18.0 0.921 -70 -2.99 0.709 160.6 0.111 -147.1 0.612 -53.9 7.60 Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.9 1.0 0.20 0.25 0.26 0.65 0.55 0.53 17.6 23.6 28.3 0.1 0.1 0.1 25.79 23.9 23.45 1.9 2.0 0.39 0.4 0.49 0.48 49 51.5 0.09 0.09 19.94 19.6 2.4 3.0 3.9 5.0 5.8 6.0 7.0 0.47 0.56 0.69 0.85 0.98 1.01 1.15 0.38 0.32 0.19 0.18 0.22 0.22 0.29 62 79.6 120 -168.8 -135.4 -128.7 -94.6 0.08 0.07 0.06 0.06 0.08 0.09 0.15 18.34 16.71 14.8 13.14 12.3 12.12 11.38 8.0 9.0 1.32 1.47 0.35 0.44 -66.7 -45.7 0.25 0.38 10.74 10.04 10.0 1.58 0.54 -28.6 0.57 9.1 40 35 MSG/MAG and |S21 | 2 (dB) Freq GHz 30 25 20 MSG 15 10 5 |S 21 | 2 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 30. MSG/MAG and |S 21 | 2 vs. Frequency at 2.7V, 20 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 11 ATF-55143 Typical Scattering Parameters, VDS = 3V, IDS = 20 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. Mag. S12 Ang. Mag. S22 Ang. MSG/MAG dB 0.1 0.5 0.998 0.947 -7.4 -35.9 23.34 22.77 14.697 13.762 174.2 151.9 0.005 0.023 85.1 69.2 0.763 0.721 -4.3 -20.6 34.68 27.77 0.9 1.0 1.5 1.9 2.0 0.859 0.839 0.738 0.671 0.657 -60.9 -66.7 -91.8 -108.7 -112.7 21.71 21.41 19.86 18.71 18.44 12.178 11.764 9.844 8.621 8.354 132.9 128.7 110.5 98.5 95.7 0.037 0.039 0.050 0.055 0.057 56.2 53.5 42.5 36.2 34.8 0.661 0.642 0.570 0.524 0.514 -33.8 -36.3 -46.7 -52.5 -53.7 25.17 24.79 22.94 21.95 21.66 2.5 3.0 4.0 5.0 0.595 0.552 0.513 0.521 -131.7 -149.8 175.4 143.8 17.19 16.07 14.2 12.58 7.233 6.36 5.13 4.256 82.7 70.9 49.1 28.7 0.062 0.067 0.075 0.081 28.7 23.5 14.2 4.9 0.468 0.423 0.345 0.287 -59.1 -63.8 -74.3 -87.7 20.67 19.77 18.35 11.97 6.0 7.0 8.0 9.0 0.536 0.557 0.577 0.613 118.3 96.5 75.3 56.2 11.1 9.83 8.67 7.71 3.588 3.1 2.715 2.43 9.7 -8.2 -25.8 -43.1 0.087 0.092 0.095 0.105 -3.5 -12.9 -22.1 -28.7 0.254 0.224 0.187 0.140 -101.6 -116.1 -124.3 -133.5 10.25 9.37 8.51 8.39 10.0 11.0 12.0 13.0 0.687 0.746 0.787 0.816 38 22 8.1 -7 6.81 5.67 4.59 3.62 2.192 1.922 1.697 1.516 -61.8 -80.2 -97.2 -114.9 0.116 0.121 0.126 0.128 -41.7 -54 -66.1 -79.1 0.075 0.084 0.145 0.191 -178.8 94 54.4 30 8.96 9.02 9.06 8.93 14.0 15.0 16.0 0.842 -22.6 2.67 0.869 0.863 -37 -50.2 1.3 -0.29 1.36 1.161 0.967 -133.6 -152.3 -169.6 0.131 0.126 0.1200 -93 -107.2 -120.2 0.256 0.369 0.471 8 -10.9 -23.5 8.92 8.24 6.61 17.0 0.879 -59.6 -1.7 0.822 175.6 0.118 -131.9 0.548 -37.3 6.30 18.0 0.924 -69.8 -2.87 0.719 159.7 0.113 -145.9 0.608 -52.2 8.42 Typical Noise Parameters, VDS = 3V, IDS = 20 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.9 1.0 0.18 0.24 0.25 0.63 0.54 0.53 17.6 23.4 27.9 0.1 0.1 0.1 25.89 23.98 23.53 1.9 0.39 0.48 48.4 0.09 20 2.0 2.4 3.0 0.4 0.47 0.56 0.47 0.39 0.32 51.6 61.9 78.7 0.09 0.08 0.07 19.66 18.4 16.77 3.9 5.0 5.8 0.68 0.85 0.97 0.19 0.19 0.22 119.8 -170.4 -135.1 0.06 0.06 0.08 14.85 13.21 12.37 6.0 7.0 1.01 1.14 0.22 0.28 -128.4 -94.7 0.09 0.14 12.2 11.47 8.0 9.0 1.31 1.47 0.35 0.44 -66.8 -45.6 0.25 0.38 10.84 10.15 10.0 1.59 0.54 -28.9 0.57 9.22 40 35 MSG/MAG and |S 21 | 2 (dB) Freq GHz 30 25 MSG 20 15 10 |S 21 | 2 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 31. MSG/MAG and |S 21 | 2 vs. Frequency at 3V, 20 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 12 ATF-55143 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. Mag. S12 Ang. Mag. S22 Ang. MSG/MAG dB 0.1 0.5 0.996 0.937 -7.9 -38.1 24.3 23.64 16.407 15.205 173.9 150.4 0.005 0.021 85.6 68.8 0.729 0.683 -4.5 -21.2 35.16 28.60 0.9 1.0 1.5 0.840 0.819 0.712 -64.1 -70.1 -95.7 22.44 22.11 20.43 13.246 12.753 10.507 130.9 126.6 108.4 0.034 0.036 0.046 56.1 53.5 43.4 0.620 0.601 0.531 -34.3 -36.8 -46.5 25.91 25.49 23.59 1.9 2.0 2.5 0.646 0.631 0.571 -112.8 -116.8 -135.8 19.2 18.91 17.59 9.117 8.823 7.578 96.4 93.7 80.9 0.051 0.052 0.057 37.7 36.6 31.3 0.488 0.479 0.437 -51.8 -52.9 -57.7 22.52 22.30 21.24 3.0 4.0 5.0 6.0 0.531 0.499 0.512 0.529 -153.9 171.8 140.9 116 16.42 14.49 12.84 11.35 6.625 5.303 4.386 3.693 69.4 48.1 28.1 9.4 0.062 0.071 0.078 0.085 26.6 18.1 9.2 0.7 0.398 0.328 0.273 0.242 -61.8 -71.6 -84.7 -98.5 20.29 18.73 11.26 10.12 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 0.552 0.573 0.609 0.684 0.744 0.786 0.816 0.842 0.870 0.866 0.882 94.7 73.9 55.1 37.3 21.6 7.9 -7.2 -22.8 -37.1 -50.3 -59.7 10.07 8.91 7.94 7.05 5.91 4.83 3.86 2.93 1.56 -0.01 -1.4 3.188 2.79 2.496 2.251 1.975 1.744 1.56 1.401 1.197 0.998 0.851 -8.3 -25.6 -42.7 -61.3 -79.5 -96.4 -113.9 -132.6 -151.1 -168.2 177 0.092 0.096 0.107 0.118 0.123 0.128 0.131 0.133 0.128 0.122 0.12 -9 -18.6 -25.8 -39.2 -51.9 -64.3 -77.5 -91.7 -106 -119.1 -130.8 0.214 0.179 0.134 0.064 0.075 0.141 0.187 0.250 0.367 0.467 0.543 -112.9 -120.5 -128.4 -173.3 87.5 49.7 26.4 5.1 -12.6 -24.8 -38.2 9.45 8.67 8.60 9.20 9.28 9.36 9.40 9.38 8.55 6.86 6.56 18.0 0.927 -69.9 -2.55 0.746 161.2 0.115 -144.8 0.602 -52.8 8.12 Typical Noise Parameters, VDS = 3V, IDS = 30 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.19 0.59 18.4 0.09 26.27 0.9 1.0 0.25 0.26 0.5 0.52 25.5 30.7 0.09 0.09 24.41 23.98 1.9 0.41 0.44 50.6 0.08 20.51 2.0 0.42 0.43 54.5 0.08 20.18 2.4 3.0 3.9 0.49 0.59 0.72 0.34 0.27 0.17 65.1 84.7 132.6 0.08 0.07 0.06 18.92 17.28 15.33 5.0 5.8 6.0 0.88 1.02 1.06 0.19 0.24 0.25 -156.2 -125.3 -118.8 0.06 0.09 0.1 13.61 12.71 12.52 7.0 8.0 9.0 1.2 1.37 1.53 0.32 0.39 0.47 -88.8 -62.7 -43.1 0.17 0.28 0.43 11.73 11.08 10.41 10.0 1.66 0.57 -27 0.65 9.58 40 35 MSG/MAG and |S 21 | 2 (dB) Freq GHz 30 25 20 MSG 15 10 |S 21 | 2 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 32. MSG/MAG and |S 21 | 2 vs. Frequency at 3V, 30 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 13 ATF-55143 Applications Information C4 C1 INPUT Q1 Zo L1 L4 L2 Introduction Agilent Technologies’s ATF-55143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz frequency range. As opposed to a typical depletion mode PHEMT where the gate must be made negative with respect to the source for proper operation, an enhancement mode PHEMT requires that the gate be made more positive than the source for normal operation. Therefore a negative power supply voltage is not required for an enhancement mode device. Biasing an enhancement mode PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7V base to emitter voltage, the ATF-55143 enhancement mode PHEMT requires about a 0.47V potential between the gate and source for a nominal drain current of 10 mA. Matching Networks The techniques for im pedance matching an enhancement mode device are very similar to those for matching a depletion mode device. The only difference is in the method of supplying gate bias. S and Noise Parameters for various bias conditions are listed in this data sheet. The circuit shown in Figure 1 shows a typical LNA circuit normally used for 900 and 1900 MHz applications (Consult the Agilent Technologies website for application notes covering specific applications). High pass impedance matching networks consisting of L1/C1 and L4/C4 pr ovide the appropriate match for noise figure, gain, S11 and S22. The high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving out-of-band rejection. R4 OUTPUT Zo L3 C2 C5 R3 R5 R1 C3 C6 R2 Vdd Figure 1. Typical ATF-55143 LNA with Passive Biasing. Capacitors C2 and C5 pr ovide a low impedance in-band RF bypass for the matching networks. Resistors R3 and R4 provide a very important low frequency termination for the device. The resistive termination improves low frequency stability. Capacitors C3 and C6 provide the low frequency RF bypass for resistors R3 and R4. Their value should be chosen carefully as C3 and C6 also provide a termination for low frequency mixing products. These mixing products are as a result of two or more inband signals mixing and producing third order in-band distortion products. The low frequency or difference mixing products are terminated by C3 and C6. For best suppression of third order distortion products based on the CDMA 1.25 MHz signal spacing, C3 and C6 should be 0.1 µF in value. Smaller values of capacitance will not suppress the generation of the 1.25 MHz difference signal and as a result will show up as poorer two tone IP3 results. Bias Networks One of the major advantages of the enhancement mode technology is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain cur rent Id. 14 Whereas a depletion mode PHEMT pulls maximum drain current when Vgs = 0V, an enhancement mode PHEMT pulls only a small amount of leakage current when Vgs =0 V. Only when Vgs is increased above Vth , the device threshold voltage, will drain cur rent star t to flow. At a Vds of 2.7V and a nominal Vgs of 0.47V, the drain cur rent Id will be approximately 10 mA. The data sheet suggests a minimum and maximum Vgs over which the desired amount of drain current will be achieved. It is also important to note that if the gate terminal is lef t open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differential between the gate and source terminals. Passive Biasing Passive biasing of the ATF-55143 is accomplished by the use of a voltage divider consisting of R1 and R2. The voltage for the divider is deriv ed from the drain voltage which provides a form of voltage feedback through the use of R3 to help keep drain current constant. Resistor R5 (approximately 10 kΩ) is added to limit the gate current of enhancement mode devices such as the ATF-55143. This is especially important when the device is driven to P1dB or PSAT. Resistor R3 is calculated based on desired Vds , Ids and available power supply voltage. R3 = VDD – Vds Ids + IBB (1) p VDD is the power supply voltage. Vds is the device drain to source voltage. Ids is the desired drain current. IBB is the current flowing through the R1/R2 resistor voltage divider network. The values of resistors R1 and R2 are calculated with the following formulas C4 C1 INPUT Zo L1 Vgs IBB R5 (2) L3 C2 R1 = C5 R4 p IBB C3 R6 R2 = (Vds – Vgs) R1 Vgs (3) Example Circuit VDD = 3V Vds = 2.7V Ids = 10 mA Vgs = 0.47V Choose IBB to be at least 10X the normal expected gate leakage current. IBB was conservatively chosen to be 0.5 mA for this example. Using equations (1), (2), and (3) the resistors are calculated as follows R1 = 940Ω R2 = 4460 Ω R3 = 28.6 Ω Active Biasing Active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in de vice dc performance. The advantage of the active biasing of an enhancement mode PHEMT versus a depletion mode PHEMT is that a negative power source is not required. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor. C7 Vdd R7 R3 R2 R1 Figure 2. Typical ATF-55143 LNA with ActiveBiasing. An active bias scheme is shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated VDD supply are present across resistor R3. Constant voltage across R3 provides a constant current supply for the drain current. Resistors R1 and R2 are used to set the desired Vds. The combined series value of these resistors also sets the amount of extra current consumed by the bias network. The equations that describe the circuit’s operation are as follows. VE = Vds + (Ids • R4) (1) VDD – VE Ids (2) R3 = p VB = VE – VBE (3) R1 V R1 + R2 DD (4) VDD = IBB (R1 + R2) (5) VB = p Rearranging equation (4) provides the following formula R2 = VDD V – VB 1 + DD VB ( 9 ) (5A) p C6 Q2 p and rearranging equation (5) provides the following formula L4 L2 R1 = OUTPUT Q1 Zo R1 (VDD – VB) VB 15 (4A) p Example Circuit VDD = 3V IBB = 0.5 mA Vds = 2.7V Ids = 10 mA R4 = 10Ω V BE = 0.7V Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds and Ids through resistor R4 to be 2.8V. Equation (2) calculates the value of resistor R3 which determines the drain current Ids. In the example R3 =20Ω. Equation (3) calculates the voltage required at the junction of resistors R1 and R2. This voltage plus the step-up of the base emitter junction determines the regulated Vds . Equations (4) and (5) are solved simultaneously to determine the value of resistors R1 and R2. In the example R1=4200 Ω and R2 =180 0Ω. R7 is chosen to be 1kΩ. This resistor keeps a small amount of current flowing through Q2 to help maint ain bias stability. R6 is chosen to be 10kΩ. This value of resistance is necessary to limit Q1 gate current in the presence of high RF drive levels (especially when Q1 is driven to the P1dB gain compression point). C7 provides a low frequency bypass to keep noise from Q2 effecting the operation of Q1. C7 is typically 0.1 µF. ATF-55143 Die Model Advanced_Curtice2_Model MESFETM1 NFET=yes Rf= PFET=no Gscap=2 Vto=0.3 Cgs=0.6193 pF Beta=0.444 Cgd=0.1435 pF Lambda=72e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.5 Ohm Tnom=16.85 Rd=2.025 Ohm Idstc= Rg=1.7 Ohm Ucrit=-0.72 Vgexp=1.91 Rs=0.675 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.094 nH Betatce= Ls= Rgs=0.5 Ohm Cds=0.100 pF Rc=390 Ohm Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.95 Vbr= Vjr= Is= Ir= Imax= Xti= Eg= N= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= ATF-55143 ADS Package Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.143 pF GATE Port G Num=1 TLINP TL4 Z=Z1 Ohm L=15 mil K=1 TLINP TL3 Z=Z2 Ohm L=25 mil K=K TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K L L6 L=0.205 nH R=0.001 L L1 L=0.621 nH R=0.001 SOURCE Port S1 Num=2 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K C C2 C=0.115 pF GaAsFET FET1 Mode1=MESFETM1 Mode=Nonlinear L L4 L=0.238 nH R=0.001 TLINP TL7 Z=Z2/2 Ohm L=5.0 mil K=K MSub L L7 L=0.778 nH R=0.001 MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil 16 TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K TLINP TL8 Z=Z1 Ohm L=15.0 mil K=1 SOURCE Port S2 Num=4 DRAIN TLINP TL6 Z=Z1 Ohm L=15.0 mil K=1 Port D Num=3 Designing with S and Noise Parameters and the Non-Linear Model The non-linear model describing the ATF-55143 includes both the die and associat ed package model. The package model includes the effect of the pins but does not include the ef fect of the additional source inductance associated with grounding the source leads through the printed circuit board. The device S and Noise Parameters do include the effect of 0.020 inch thickness printed circuit board vias. When comparing simulation results between the measured S param- VIA2 V1 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil For Further Information The information presented here is an introduction to the use of the ATF-55143 enhancement mode PHEMT. More detailed application circuit information is a vailable from Agilent Technologies. Consult the web page or your local Agilent Technologies sales represent ative. DRAIN SOURCE VIA2 V3 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil ATF-55143 SOURCE VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil eters and the simulated nonlinear model, be sure to include the effect of the printed circuit board to get an accurate comparison. This is shown schematically in Figure 3. GATE VIA2 V4 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil Figure 3. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters. 17 Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measurements while t he Fmins below 2 GHz ha ve been extrapolated. The Fmin values are based on a set of 16 noise f igure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented wit h an impedance matching network that transforms the source impedance, typically 50Ω, to an impedance represented by the reflection coefficient Γo. The designer must design a matching network that will present Γo to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise f igure of the device plus the losses of the matching netw ork preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with Γo. If the ref lection coefficient of the matching network is other than Γo, then the noise figure of the device will be g reater than Fmin based on t he following equation. |Γs – Γo | 2 NF = Fmin + 4 Rn Zo (|1 + Γo| 2) (1 - |Γs| 2) Where Rn /Zo is the normalized noise resistance, Γo is the optimum reflection coefficient required to produce Fmin and Γs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. Γo is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower Γo as compared to narrower gate width devices. 18 Typically for FETs, the higher Γo usually infers that an impedance much higher than 50Ω is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using multilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Technologies Application 1085. Ordering Information Part Number No. of Devices Container ATF-55143-TR1 3000 7” Reel ATF-55143-TR2 10000 13” Reel ATF-55143-BLK 100 antistatic bag Package Dimensions Outline 43 SOT-343 (SC70 4-lead) 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E 1.30 (.051) E1 0.85 (.033) 0.55 (.021) TYP 1.15 (.045) BSC e 1.15 (.045) REF D h A b TYP A1 L θ DIMENSIONS SYMBOL A A1 b C D E e h E1 L θ MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) 19 C TYP Device Orientation REEL TOP VIEW END VIEW 4 mm CARRIER TAPE 8 mm USER FEED DIRECTION COVER TAPE Tape Dimensions For Outline 4T P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.255 ± 0.013 0.315 ± 0.012 0.010 ± 0.0005 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5988-3190EN July 18, 2001 5988-3587EN 5° MAX. 20 当社半導体部品のご使用にあたって 仕様及び仕様書に関して ・本仕様は製品改善および技術改良等により予告なく変更する場合があります。ご使用の際には最 新の仕様を問い合わせの上、用途のご確認をお願いいたします。 ・本仕様記載内容を無断で転載または複写することは禁じられております。 ・本仕様内でご紹介している応用例（アプリケーション）は当社製品がご使用できる代表的なもの です。ご使用において第三者の知的財産権などの保証または実施権の許諾に対して問題が発生し た場合、当社はその責任を負いかねます。 ・仕様書はメーカとユーザ間で交わされる製品に関する使用条件や誤使用防止事項を言及するもの です。仕様書の条件外で保存、使用された場合に動作不良、機械不良が発生しても当社は責任を 負いかねます。ただし、当社は納品後 1 年以内に当社の責任に帰すべき理由で、不良或いは故障 が発生した場合、無償で製品を交換いたします。 ・仕様書の製品が製造上および政策上の理由で満足できない場合には変更の権利を当社が有し、そ の交渉は当社の要求によりすみやかに行われることとさせて頂きます。なお、基本的に変更は3ヶ 月前、廃止は 1 年前にご連絡致しますが、例外もございますので予めご了承ください。 ご使用用途に関して ・当社の製品は、一般的な電子機器（コンピュータ、OA 機器、通信機器、AV 機器、家電製品、ア ミューズメント機器、計測機器、一般産業機器など）の一部に組み込まれて使用されるものです。 極めて高い信頼性と安全性が要求される用途（輸送機器、航空・宇宙機器、海底中継器、原子力 制御システム、生命維持のための医療機器などの財産・環境もしくは生命に悪影響を及ぼす可能 性を持つ用途）を意図し、設計も製造もされているものではありません。それゆえ、本製品の安 全性、品質および性能に関しては、仕様書（又は、カタログ）に記載してあること以外は明示的 にも黙示的にも一切の保証をするものではありません。 回路設計上のお願い ・当社は品質、信頼性の向上に努力しておりますが、一般的に半導体製品の誤動作や、故障の発生 は避けられません。本製品の使用に附随し、或いはこれに関連する誤動作、故障、寿命により、 他人の生命又は財産に被害や悪影響を及ぼし、或いは本製品を取り付けまたは使用した設備、施 設または機械器具に故障が生じ一般公衆に被害を起こしても、当社はその内容、程度を問わず、 一切の責任を負いかねます。 お客様の責任において、装置の安全設計をお願いいたします。 21