GTM G3314

Pb Free Plating Product
CORPORATION
G3314
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/03/04
REVISED DATE :
BVDSS
RDS(ON)
ID
-30V
240m
-1.9A
Description
The G3314 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Low On-resistance
*Ultrahigh-speed switching
*4V drive
Package Dimensions
REF.
A
B
C
D
E
F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
3
Continuous Drain Current
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient Max.
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
-30
20
-1.9
-1.5
-10
1.38
0.01
-55 ~ +150
Symbol
Rthj-a
Ratings
90
Unit
/W
1/4
CORPORATION
Electrical Characteristics(Tj = 25
Parameter
ISSUED DATE :2005/03/04
REVISED DATE :
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
-0.1
-
Gate Threshold Voltage
VGS(th)
-1.0
-
-
V
VDS=VGS, ID=-250uA
gfs
-
2
-
S
VDS=-10V, ID=-1.7A
IGSS
-
-
100
nA
VGS=
-
-
-1
uA
VDS=-30V, VGS=0
-
-
-10
uA
VDS=-30V, VGS=0
-
-
240
-
-
270
-
-
460
-
-
500
Qg
-
6.2
-
Gate-Source Charge
Qgs
-
1.4
-
Gate-Drain (“Miller”) Change
Qgd
-
0.3
-
Td(on)
-
7.6
-
Tr
-
8.2
-
Td(off)
-
17.5
-
Tf
-
9
-
Input Capacitance
Ciss
-
230
-
Output Capacitance
Coss
-
130.4
-
Reverse Transfer Capacitance
Crss
-
40
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=-1.25A, VGS=0V
IS
-
-
-1
A
VD= VG=0V, VS=-1.2V
ISM
-
-
-6.4
A
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
2
Static Drain-Source On-Resistance
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
IDSS
RDS(ON)
V/
Test Conditions
VGS=0, ID=-250uA
Reference to 25 , ID=-1mA
20V
VGS=-10V, ID=-1.7A
m
VGS=-10V, ID=-0.8A
VGS=-4.5V, ID=-1.3A
VGS=-4V, ID=-0.4A
nC
ID=-1.7A
VDS=-15V
VGS=-10V
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
pF
VGS=0V
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
1
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /W when mounted on min. copper pad.
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CORPORATION
ISSUED DATE :2005/03/04
REVISED DATE :
Characteristics Curve
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CORPORATION
ISSUED DATE :2005/03/04
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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