Pb Free Plating Product CORPORATION G3314 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/03/04 REVISED DATE : BVDSS RDS(ON) ID -30V 240m -1.9A Description The G3314 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features *Low On-resistance *Ultrahigh-speed switching *4V drive Package Dimensions REF. A B C D E F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Unit V V A A A W W/ Tj, Tstg Ratings -30 20 -1.9 -1.5 -10 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter ISSUED DATE :2005/03/04 REVISED DATE : Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.1 - Gate Threshold Voltage VGS(th) -1.0 - - V VDS=VGS, ID=-250uA gfs - 2 - S VDS=-10V, ID=-1.7A IGSS - - 100 nA VGS= - - -1 uA VDS=-30V, VGS=0 - - -10 uA VDS=-30V, VGS=0 - - 240 - - 270 - - 460 - - 500 Qg - 6.2 - Gate-Source Charge Qgs - 1.4 - Gate-Drain (“Miller”) Change Qgd - 0.3 - Td(on) - 7.6 - Tr - 8.2 - Td(off) - 17.5 - Tf - 9 - Input Capacitance Ciss - 230 - Output Capacitance Coss - 130.4 - Reverse Transfer Capacitance Crss - 40 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=-1.25A, VGS=0V IS - - -1 A VD= VG=0V, VS=-1.2V ISM - - -6.4 A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) 2 Static Drain-Source On-Resistance 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time IDSS RDS(ON) V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA 20V VGS=-10V, ID=-1.7A m VGS=-10V, ID=-0.8A VGS=-4.5V, ID=-1.3A VGS=-4V, ID=-0.4A nC ID=-1.7A VDS=-15V VGS=-10V ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270 /W when mounted on min. copper pad. 2/4 CORPORATION ISSUED DATE :2005/03/04 REVISED DATE : Characteristics Curve 3/4 CORPORATION ISSUED DATE :2005/03/04 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4