GTM G3401

Pb Free Plating Product
CORPORATION
G3401
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2006/08/31
REVISED DATE :
BVDSS
RDS(ON)
ID
-30V
50m
-4.2A
Description
The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The G3401 is universally used for all commercial-industrial applications.
Features
*Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0°
10°
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
-30
±12
-4.2
-3.5
-30
1.38
0.01
-55 ~ +150
Symbol
Rthj-a
Ratings
90
Unit
/W
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient Max.
G3401
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CORPORATION
Electrical Characteristics (Tj = 25
Parameter
ISSUED DATE :2006/08/31
REVISED DATE :
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th)
-0.7
-
-1.3
V
VDS=VGS, ID=-250uA
gfs
-
11
-
S
VDS=-5V, ID=-5A
IGSS
-
-
±100
nA
VGS= ±12V
-
-
-1
uA
VDS=-24V, VGS=0
-
-
-5
uA
VDS=-24V, VGS=0
-
-
50
-
-
65
-
-
120
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
Static Drain-Source On-Resistance
2
IDSS
RDS(ON)
Test Conditions
VGS=-10V, ID=-4.2A
m
VGS=-4.5V, ID=-4.0A
VGS=-2.5V, ID=-1.0A
Total Gate Charge
Qg
-
9.4
-
Gate-Source Charge
Qgs
-
2
-
Gate-Drain (“Miller”) Change
Qgd
-
3
-
Td(on)
-
6.3
-
Tr
-
3.2
-
Td(off)
-
38.2
-
Tf
-
12
-
Input Capacitance
Ciss
-
954
-
Output Capacitance
Coss
-
115
-
Reverse Transfer Capacitance
Crss
-
77
-
Rg
-
6
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.0
V
IS=-1.0A, VGS=0V
Reverse Recovery Time
Trr
-
20.2
-
ns
Reverse Recovery Charge
Qrr
-
11.2
-
nC
IS=-4A, VGS=0V
dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
-2.2
A
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
ID=-4A
VDS=-15V
VGS=-4.5V
ns
VDS=-15V
VGS=-10V
RG=6
RL=3.6
pF
VGS=0V
VDS=-15V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
VD=VG=0V, VS=-1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad.
G3401
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CORPORATION
ISSUED DATE :2006/08/31
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
10
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
G3401
Fig 6. Body Diode Characteristics
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CORPORATION
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
ISSUED DATE :2006/08/31
REVISED DATE :
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
v.s. Junction Temperature
Fig 10. Typical Capacitance Characteristics
Fig 11. Normalized Maximum Transient Thermal Impedance
Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G3401
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