GTM GTS9928E

Pb Free Plating Product
ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
GTS9928E
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
20V
22m
5A
Description
The GTS9928E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
Package Dimensions
REF.
Millimeter
Min.
Max.
-
1.20
0.05
0.15
b
c
0.19
0.30
0.09
D
2.90
A
A1
REF.
E
E1
Millimeter
Min.
Max.
6.20
6.60
4.30
4.50
0.20
e
L
0.45
0.75
3.10
S
0°
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
3
12
V
Drain Current , [email protected]
ID @Ta=25
5.0
A
3
ID @Ta=70
3.5
A
25
A
1
W
Drain Current , [email protected]
Pulsed Drain Current
1
IDM
PD @Ta=25
Power Dissipation
Linear Derating Factor
0.008
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Ratings
Rthj-a
125
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Unit
/W
1/6
ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.02
-
Gate Threshold Voltage
VGS(th)
0.5
-
-
V
VDS=VGS, ID=250uA
gfs
-
21
-
S
VDS=10V, ID=5A
IGSS
-
-
10
uA
VGS=
-
-
1
uA
VDS=20V, VGS=0
-
-
25
uA
VDS=20V, VGS=0
-
-
22
-
-
28
Qg
-
15.9
-
Gate-Source Charge
Qgs
-
1.5
-
Gate-Drain (“Miller”) Change
Qgd
-
7.4
-
Td(on)
-
6.2
-
Tr
-
9
-
Td(off)
-
30
-
Tf
-
11
-
Input Capacitance
Ciss
-
530
-
Output Capacitance
Coss
-
245
-
Reverse Transfer Capacitance
Crss
-
125
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=5A, VGS=0, Tj=25
IS
-
-
0.83
A
VD=VG=0V, VS=1.2V
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
12V
VGS=4.5V, ID=5A
VGS=2.5V, ID=2A,
nC
ID=5A
VDS=10V
VGS=4.5V
ns
VDS=10V
ID=1A
VGS=4.5V
RG=3.3
RD=10
pF
VGS=0V
VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208 /W when mounted on Min. copper pad.
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ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
Characteristics Curve
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ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
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ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
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ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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