GTM GTC9926

Pb Free Plating Product
ISSUED DATE :2004/10/18
REVISED DATE :2006/07/27B
GTC9926
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
20V
28m
6A
Description
The GTC9926 provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
REF.
Millimeter
Min.
Max.
A
-
1.20
A1
b
c
0.05
0.15
0.19
0.30
0.09
D
2.90
REF.
Millimeter
Min.
Max.
E
6.20
6.60
4.30
4.50
0.20
E1
e
L
0.45
0.75
3.10
S
0°
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
3
Drain Current ,[email protected]
ID @Ta=25
6
A
3
ID @Ta=70
4.8
A
20
A
1
W
Drain Current ,[email protected]
Pulsed Drain Current
1,
IDM
Power Dissipation
PD @Ta=25
Operating Junction and Storage Temperature Range
Tj, Tstg
Linear Derating Factor
-55 ~ +150
0.008
W/
Symbol
Value
Unit
Rthj-a
125
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
/W
1/4
ISSUED DATE :2004/10/18
REVISED DATE :2006/07/27B
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.03
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V
VDS=VGS, ID=250uA
gfs
-
20
-
S
VDS=10V, ID=6A
IGSS
-
-
±100
nA
VGS= ±12V
-
-
1
uA
VDS=20V, VGS=0
-
-
25
uA
VDS=16V, VGS=0
-
-
28
-
-
38
Qg
-
23
-
Gate-Source Charge
Qgs
-
4.5
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
Td(on)
-
30
-
Tr
-
70
-
Td(off)
-
40
-
Tf
-
65
-
Input Capacitance
Ciss
-
1035
-
Output Capacitance
Coss
-
320
-
Reverse Transfer Capacitance
Crss
-
150
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=1.7A, VGS=0, Tj=25
IS
-
-
1.54
A
VD= VG=0V, VS=1.3V
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5.2A
nC
ID=6A
VDS=20V
VGS=5.0V
ns
VDS=10V
ID=1A
VGS=5V
RG=6
RD=10
pF
VGS=0V
VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208 /W when mounted on Min. copper pad.
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ISSUED DATE :2004/10/18
REVISED DATE :2006/07/27B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. RDSON v.s. Junction Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
ISSUED DATE :2004/10/18
REVISED DATE :2006/07/27B
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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