ISSUED DATE :2005/07/14 REVISED DATE : G B AV 1 5 1 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A Description The GBAV151 is designed for ultra high speed switching application. Package Dimensions Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. A B C D E F Absolute Maximum Ratings (At TA = 25 Parameter REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 unless otherwise specified) Symbol Ratings Unit Max. Peak Reverse Voltage VRM 40 V Max. Reverse Voltage VR 40 V Max. Average Forward Rectified Current Io 100 mA Non-Repetitive Peak Forward surge Current @Tp =1.0us @Tp =1.0s IFSM Power Dissipation PD 225 225 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Electrical Characteristics (At TA = 25 Characteristics Reverse Breakdown Voltage Forward Voltage mA 500 mW unless otherwise noted) Symbol Min. Max. Unit V(BR)R VF Test Conditions 40 - V IR=100 A - 1.2 V IF=100mA Reverse Voltage Leakage Current IR - 100 nA VR=35V Diode Capacitance CD - 2.0 pF VR=0V, f=1.0MHz Reverse Recovery Time (Figure 1) trr - 3.0 ns IF=10mA, VR=6V, RL=100 , Irr=0.1IR 1/2 ISSUED DATE :2005/07/14 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2