GTM GSBAS40

CORPORATION
ISSUED DATE :2005/12/20
REVISED DATE :
G SB AS40 t h ru G SB AS40- 06
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
Description
These schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage
clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is
excellent for hand held and portable applications where space is limited.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BCS.
REF.
L1
L
b
c
e
Q1
Absolute Maximum Ratings at TA = 25
Parameter
Symbol
Ratings
Operating Junction Temperature
Unit
Tj
-55 ~ +125
Storage Temperature
Tstg
-55 ~ +150
Maximum Repetitive Peak Reverse Voltage
VRRM
40
Thermal Resistance Junction to Ambient Air
R
JA
445
/W
Peak Forward Surge Current at tp < 1.0s
V
IFSM
0.6
A
Maximum Average Forward Rectified Current
Io
0.2
A
Total Power Dissipation
PD
225
mW
Electrical Characteristics (at TA = 25
Parameter
unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
V(BR)R
40
-
-
V
Forward Voltage(tp < 300uS)
VF
-
-
380
-
-
1000
mV
Test Conditions
IR=10 A
IF1=1mA
IF2=40mA
Reverse Leakage Current
IR
-
200
nA
VR=30V
Total Capacitance
CT
-
-
5.0
pF
VR=0V, f=1MHz
Reverse Recover Time
Trr
-
-
5.0
ns
IF=IR=10mA, RL=100 , Irr=1mA
GSBAS40
Page: 1/2
CORPORATION
ISSUED DATE :2005/12/20
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSBAS40
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