CORPORATION G B AS16 ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A Description The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings at TA = 25 Parameter Symbol Ratings Junction Temperature Tj +150 Storage Temperature Tstg -65 ~ +150 Reverse Voltage Unit VR 85 V VRRM 85 V Forward Current IO 250 mA Repetitive Forward Current IFM 500 mA Forward Surge Current (1ms) IFSM 1000 mA PD 350 mW Repetitive Reverse Voltage Total Power Dissipation(Note1) Note 1.Device mounted on FR-4=1.6*1.6*0.06in Electrical Characteristics (at TA = 25 Characteristic Reverse Breakdown Voltage Forward Voltage Reverse Current Min. V(BR) 85 - V VF(1) - 715 mV VF(2) - 855 mV IF=10mA VF(3) - 1000 mV IF=50mA VF(4) - 1250 mV IF=150mA IR - 1 uA VR=85V 2 pF VR=0, f=1MHz 6 nS IF=IR=10mA, RL =100 Total Capacitance CT Reverse Recovery Time Trr GBAS16 unless otherwise noted) Symbol - Max. Unit Test Conditions IR=100uA IF=1mA measured at IR=1mA Page: 1/2 CORPORATION ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GBAS16 Page: 2/2