Pb Free Plating Product CORPORATION GC2307 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/06/20 REVISED DATE : BVDSS RDS(ON) ID -16V 60m -4.0A Description The GC2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2307 is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Fast Switching Package Dimensions D TO-92 E A S1 b1 REF. L S E A T IN G PLANE e1 e b A S1 b b1 C C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings -16 ±8 -4.0 -3.3 -12 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. 1/4 CORPORATION Electrical Characteristics (Tj = 25 Parameter ISSUED DATE :2005/06/20 REVISED DATE : unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -16 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.01 - Gate Threshold Voltage VGS(th) - - -1.0 V VDS=VGS, ID=-250uA gfs - 12 - S VDS=-5V, ID=-4A IGSS - - ±100 nA VGS= ±8V - - -1 uA VDS=-16V, VGS=0 - - -25 uA VDS=-12V, VGS=0 - - 60 - - 70 - - 90 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 IDSS RDS(ON) V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VGS=-4.5V, ID=-4A m VGS=-2.5V, ID=-3.0A VGS=-1.8V, ID=-2.0A Total Gate Charge Qg - 15 24 Gate-Source Charge Qgs - 1.3 - Gate-Drain (“Miller”) Change Qgd - 4 - Td(on) - 8 - Tr - 11 - Td(off) - 54 - Tf - 36 - Ciss - 985 1580 Output Capacitance Coss - 180 - Reverse Transfer Capacitance Crss - 160 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-1.2A, VGS=0V Reverse Recovery Time Trr - 39 - ns Reverse Recovery Charge Qrr - 26 - nC IS=-4A, VGS=0V dI/dt=100A/ s 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance nC ID=-4A VDS=-12V VGS=-4.5V ns VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2/4 CORPORATION ISSUED DATE :2005/06/20 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 CORPORATION Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform ISSUED DATE :2005/06/20 REVISED DATE : Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4