GTM GS1333

Pb Free Plating Product
ISSUED DATE :2005/03/10
REVISED DATE :
GS1333
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
800m
-550mA
Description
The GS1333 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*Fast Switching Speed
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
1,2
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Unit
V
V
mA
mA
A
W
W/
Tj, Tstg
Ratings
-20
12
-550
-440
2.5
0.35
0.003
-55 ~ +150
Symbol
Rthj-a
Ratings
360
Unit
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
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ISSUED DATE :2005/03/10
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.01
-
Gate Threshold Voltage
VGS(th)
-0.5
-
-1.2
V
VDS=VGS, ID=-250uA
gfs
-
1
-
S
VDS=-5V, ID=-550mA
IGSS
-
-
100
nA
VGS=
-
-
-1
uA
VDS=-20V, VGS=0
-
-
-10
uA
VDS=-16V, VGS=0
-
-
600
-
-
800
-
-
1000
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
V/
m
-
1.7
2.7
Gate-Source Charge
Qgs
-
0.3
-
Gate-Drain (“Miller”) Change
Qgd
-
0.4
-
Td(on)
-
5
-
Tr
-
8
-
Td(off)
-
10
-
Tf
-
2
-
Input Capacitance
Ciss
-
66
105.6
Output Capacitance
Coss
-
25
-
Reverse Transfer Capacitance
Crss
-
20
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.2
V
Turn-off Delay Time
Fall Time
Reference to 25 , ID=-1mA
12V
VGS=-4.5V, ID=-500mA
VGS=-2.5V, ID=-300mA
Qg
Rise Time
VGS=0, ID=-250uA
VGS=-10V, ID=-550mA
Total Gate Charge2
Turn-on Delay Time2
Test Conditions
nC
ID=-500mA
VDS=-16V
VGS=-4.5V
ns
VDS=-10V
ID=-500mA
VGS=-5V
RG=3.3
RD=20
pF
VGS=0V
VDS=-10V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Test Conditions
IS=-300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
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ISSUED DATE :2005/03/10
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/03/10
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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