Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B GI01N60 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600V 8 1.6A Description The GI01N60 provide the designer with the best combination of fast switching. The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC converters. Features *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25 1.6 A Continuous Drain Current, VGS@10V ID @TC=100 1 A 6 A 39 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor Single Pulse Avalanche Energy 0.31 2 W/ EAS 13 mJ Avalanche Current IAR 1.6 A Repetitive Avalanche Energy EAR 0.5 mJ Tj, Tstg -55 ~ +150 Symbol Value Operating Junction and Storage Temperature Range Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 3.2 /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GI01N60 Page: 1/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 600 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.6 - Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA gfs - 0.8 - S VDS=50V, ID=0.8A IGSS - - ±100 nA VGS= ±20V - - 100 uA VDS=600V, VGS=0 - - 500 uA VDS=480V, VGS=0 RDS(ON) - 7.2 8.0 Total Gate Charge Qg - 7.7 - Gate-Source Charge Qgs - 1.5 - Gate-Drain (“Miller”) Change Qgd - 2.6 - Td(on) - 8 - Tr - 5 - Td(off) - 14 - Tf - 7 - Ciss - 286 - Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 5 - Symbol Min. Typ. Max. Unit VSD - - 1.5 V IS=1.6A, VGS=0V, Tj=25 IS - - 1.6 A VD=VG=0V, VS=1.5V ISM - - 6 A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance 3 3 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance IDSS V/ Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=0.8A nC ID=1.6A VDS=480V VGS=10V ns VDD=300V ID=1.6A VGS=10V RG=10 RD=187.5 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter 3 Forward On Voltage Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.6A. 3. Pulse width 300us, duty cycle 2%. GI01N60 Page: 2/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation GI01N60 Page: 3/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 11. Forward Characteristics of Reverse Diode GI01N60 Fig 8. Effective Transient Thermal Impedance Fig 10. Typical Capacitance Characteristics Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI01N60 Page: 5/5