GTM GJ01L60

Pb Free Plating Product
ISSUED DATE :2005/08/19
REVISED DATE :
GJ01L60
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
600V
12
1A
Description
The GJ01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and
suited for AC/DC converters.
Features
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current, VGS@10V
ID @TC=25
1
A
Continuous Drain Current, VGS@10V
ID @TC=100
0.8
A
3
A
29
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy
0.232
2
W/
EAS
0.5
mJ
Avalanche Current
IAR
1
A
Repetitive Avalanche Energy
EAR
0.5
mJ
Tj, Tstg
-55 ~ +150
Symbol
Value
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-case
4.3
/W
Thermal Resistance Junction-ambient
Max.
Rthj-amb
110
/W
GJ01L60
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ISSUED DATE :2005/08/19
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
600
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.8
-
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V
VDS=VGS, ID=250uA
gfs
-
0.8
-
S
VDS=10V, ID=0.5A
IGSS
-
-
±100
nA
VGS= ±30V
-
-
10
uA
VDS=600V, VGS=0
-
-
100
uA
VDS=480V, VGS=0
RDS(ON)
-
-
12
Qg
-
4.0
-
Gate-Source Charge
Qgs
-
1.0
-
Gate-Drain (“Miller”) Change
Qgd
-
1.1
-
Td(on)
-
6.6
-
Tr
-
5.0
-
Td(off)
-
11.7
-
Tf
-
9.2
-
Input Capacitance
Ciss
-
170
-
Output Capacitance
Coss
-
30.7
-
Reverse Transfer Capacitance
Crss
-
5.1
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=1A, VGS=0V, Tj=25
IS
-
-
1
A
VD=VG=0V, VS=1.2V
ISM
-
-
5
A
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
3
Static Drain-Source On-Resistance
3
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
IDSS
V/
Test Conditions
VGS=0, ID=1mA
Reference to 25 , ID=1mA
VGS=10V, ID=0.5A
nC
ID=1A
VDS=480V
VGS=10V
ns
VDD=300V
ID=1A
VGS=10V
RG=3.3
RD=300
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
1
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1.0mH, RG=25 , IAS=1.0A.
3. Pulse width 300us, duty cycle 2%.
GJ01L60
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ISSUED DATE :2005/08/19
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GJ01L60
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ISSUED DATE :2005/08/19
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ01L60
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