Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : G L A2 N 7 0 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 675V 10 0.2A Description The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 675 V Gate-Source Voltage VGS 30 V Continuous Drain Current, VGS@5V ID @TC=25 0.2 A Continuous Drain Current, VGS@5V ID @TC=100 0.13 A 0.5 A 1.13 W Pulsed Drain Current 1 IDM PD @TC=25 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy 0.01 2 W/ EAS 0.5 mJ Avalanche Current IAR 1 A Repetitive Avalanche Energy EAR 0.5 mJ Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 110 Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient GLA2N70 Max. Unit /W Page: 1/5 ISSUED DATE :2005/09/14 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 675 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.52 - Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA gfs - 0.4 - S VDS=10V, ID=0.2A IGSS - - 100 nA VGS= - - 10 uA VDS=675V, VGS=0 - - 100 uA VDS=540V, VGS=0 - - 8.0 VGS=10V, ID=0.2A - - 10.0 VGS=5V, ID=0.2A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA 30V Total Gate Charge3 Qg - 5.5 - Gate-Source Charge Qgs - 1.9 - Gate-Drain (“Miller”) Change Qgd - 0.5 - Td(on) - 7.7 - Tr - 3.6 - Td(off) - 24 - Tf - 44 - Input Capacitance Ciss - 286 - Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 6 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=0.2A, VGS=0V, Tj=25 IS - - 0.2 A VD=VG=0V, VS=1.2V ISM - - 0.5 A Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time nC ID=0.2A VDS=540V VGS=10V ns VDD=300V ID=0.2A VGS=10V RG=3.3 RD=1500 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter 3 Forward On Voltage Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=1A. 3. Pulse width 300us, duty cycle 2%. GLA2N70 Page: 2/5 ISSUED DATE :2005/09/14 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation GLA2N70 Page: 3/5 ISSUED DATE :2005/09/14 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 11. Forward Characteristics of Reverse Diode GLA2N70 Fig 8. Effective Transient Thermal Impedance Fig 10. Typical Capacitance Characteristics Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2005/09/14 REVISED DATE : Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GLA2N70 Page: 5/5