GTM GI405

Pb Free Plating Product
ISSUED DATE :2006/12/06
REVISED DATE :
GI405
BVDSS
RDS(ON)
ID
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
-30V
32m
-18A
Description
The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate
resistance.
The through-hole version (TO-251) is available for low-profile applications and suited for high current load
applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25
-18
A
Continuous Drain Current, VGS@10V
ID @TC=100
-14
A
-40
A
60
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy
0.4
2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
W/
EAS
61
mJ
IAS
-35
A
Tj, Tstg
-55 ~ +175
Symbol
Value
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
2.5
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
50
/W
GI405
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ISSUED DATE :2006/12/06
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th)
-1.2
-
-2.4
V
VDS=VGS, ID=-250uA
gfs
-
17
-
S
VDS=-5V, ID=-18A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
-1
uA
VDS=-30V, VGS=0
-
-
-5
uA
VDS=-24V, VGS=0
-
-
32
-
-
60
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
Static Drain-Source On-Resistance3
IDSS
RDS(ON)
m
Test Conditions
VGS=-10V, ID=-18A
VGS=-4.5V, ID=-10A
Total Gate Charge3
Qg
-
18.7
23
Gate-Source Charge
Qgs
-
2.54
-
Gate-Drain (“Miller”) Change
Qgd
-
5.4
-
Td(on)
-
9
13
Tr
-
25
-
Td(off)
-
20
-
Tf
-
12
-
Input Capacitance
Ciss
-
920
1100
Output Capacitance
Coss
-
190
-
Reverse Transfer Capacitance
Crss
-
122
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.0
V
IS=-1A, VGS=0V
IS
-
-
-18
A
VD= VG=0V, VS=-1.0V
Reverse Recovery Time
Trr
-
21.4
-
ns
Reverse Recovery Charge
Qrr
-
13
-
nC
IS=-18A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=-18A
VDS=-15V
VGS=-10V
ns
VDS=-15V
VGS=-10V
RG=3
RL=0.82
pF
VGS=0V
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
3
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=25V, L=0.1mH, RG=25 .
3. Pulse width 300us, duty cycle 2%.
GI405
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ISSUED DATE :2006/12/06
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
10
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
GI405
Fig 6. Body Diode Characteristics
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ISSUED DATE :2006/12/06
REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
Fig 9. Gate Charge Characteristics
0.00001
0.0001
0.001
0.01
Fig 10. Typical Capacitance Characteristics
0.1
1
10
100
1000
Fig 11. Normalized Maximum Transient Thermal Impedance
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI405
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