Pb Free Plating Product ISSUED DATE :2005/12/16 REVISED DATE : GM2501 BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 200m -2.6A Description The GM2501 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage and battery power applications. Features *Simple Drive Requirement *Surface Mount Device Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Symbol Ratings Unit VDS -20 V VGS ±12 V Continuous Drain Current 3 ID @TA=25 -2.6 A Continuous Drain Current 3 ID @TA=70 -2.1 A -10 A 1.5 W Pulsed Drain Current 1,2 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.012 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 83.3 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GM2501 Max. Unit /W Page: 1/4 ISSUED DATE :2005/12/16 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.1 - Gate Threshold Voltage VGS(th) -0.5 - - V VDS=VGS, ID=-250uA gfs - 4.4 - S VDS=-5V, ID=-2.6A IGSS - - ±100 nA VGS= ±12V - - -1 uA VDS=-20V, VGS=0 - - -10 uA VDS=-16V, VGS=0 - - 200 - - 250 - - 300 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) 2 Static Drain-Source On-Resistance IDSS RDS(ON) V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VGS=-10V, ID=-2.6A m VGS=-4.5V, ID=-2.0A VGS=-2.5V, ID=-1.0A Total Gate Charge2 Qg - 5.2 10 Gate-Source Charge Qgs - 1.36 - Gate-Drain (“Miller”) Change Qgd - 0.6 - Td(on) - 5.2 - Tr - 9.7 - Td(off) - 19 - Tf - 29 - Input Capacitance Ciss - 295 - Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss - 65 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-1.6A, VGS=0V, Tj=25 IS - - -1 A VD=VG=0V, VS=-1.2V ISM - - -10 A Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=-2.8A VDS=-6V VGS=-5V ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 pF VGS=0V VDS=-6V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t GM2501 10sec. Page: 2/4 ISSUED DATE :2005/12/16 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics GM2501 Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/12/16 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GM2501 Page: 4/4