1/2 GM BT1015 P NP E PITAXI AL P L ANAR T RANS ISTO R Description The GMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Package Dimensions SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55~+150 Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current IC -150 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO -50 - - V Test Conditions BVCEO -50 - - V IC=-1mA BVEBO -5 - - V IE=-10uA ICBO - - -100 nA VCB=-50V IEBO - - -100 nA VEB=-5V IC=-100uA VCE(sat) - - -300 mV IC=-100mA, IB=-10mA VBE(sat) - - -1.1 V IC=-100mA, IB=-10mA hFE1 120 - 700 hFE2 25 - - fT 80 - - MHz - - 7 pF Cob VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz,IE=0 *Pulse Test: Pulse width 380us ,Duty cycle Classification Of hFE1 Rank A4Y A4G A4B Range 120-140 200-400 350-700 2% 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165