GM BT1815 1/2 NP N E PITAX I AL P L ANAR T RANS ISTO R Description The GMBT1815 is Designed for use Driver Stage of AF Amplifier and General Purpose Application. Package Dimensions REF A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Characteristics Symbol Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 60 50 5 150 250 Unit V V V mA mW at Ta = 25 Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V IC=100uA BVCEO 50 - - V IC=1mA BVEBO 5 - - V IE=10uA ICBO - - 100 nA VCB=60V IEBO - - 100 nA VEB=5V VCE(sat) - - 250 mV IC=100mA, IB=10mA V VBE(sat) - - 1.0 hFE1 120 - 700 hFE2 25 - - VCE=6V, IC=150mA hFE3 80 - - VCE=1V, IC=10mA fT 80 - - MHz - - 3.5 pF Cob Classification of Rank Range IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz hFE1 C4Y 120 - 240 C4G 200 - 400 C4B 350 - 700 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165