1/2 GM BT8550 P N P E PI TA XI A L T RA N SI STO R Description The GMBT8550 is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO -25 V Collector to Emitter Voltage VCEO -20 V Emitter to Base Voltage VEBO -5 V Collector Current IC -700 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO -25 - - V BVCEO -20 - - V IC=-1mA BVEBO -5 - - V IE=-10uA ICBO - - -1 uA VCB=-20V IEBO - - -100 nA VEB=-6V VCE(sat) - - -500 mV IC=-500mA, IB=-50mA VBE(on) - - -1 V VCE=-1V, IC=-150mA hFE 100 - 500 fT 150 - - MHz - - 10 pF Cob Test Conditions IC=-10uA VCE=-1V, IC=-150mA Classification Of hFE Rank B9C B9D B9E hFE 100 - 200 150 - 300 250 - 500 VCE=-10V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165