1/2 GM BT5089 NP N E PITAXI AL P L ANAR T RANS ISTO R Description The GMBT5089 is designed for low noise, high gain, general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 30 Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 4.5 V V Collector Current IC 50 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit 30 - - V IC=100uA BVCEO 25 - - V IC=1mA BVEBO 4.5 - - V IE=10uA - - 50 nA VCB=15V BVCBO ICBO Test Conditions IEBO - - 100 nA VEB=4.5V *VCE(sat) - - 500 mV IC=10mA, IB=1mA mV IC=10mA, IB=1mA *VBE(sat) - - 800 hFE1 400 - 1200 hFE2 450 - hFE3 400 - fT 50 Cob - - VCE=5V, IC=0.1mA VCE=5V, IC=1mA - VCE=5V, IC=10mA - MHz 4 pF VCE=5V, IC=0.5mA, f=20MHz VCB=5V, f=1MHz *Pulse Test:Pulse Width <=380us, Duty Cycle <=2% 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165