GL2222A 1/2 NPN EPITAXIAL PLANAR T RANSISTOR Description The GL2222A is designed for General Purpose Amplifier and High-Speed Switching, Medium-Power Switching Applications. Package Dimensions REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Characteristics Symbol Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 75 40 6 600 2 Unit V V V mA W at Ta = 25 Min. Typ. Max. Unit BVCBO 75 - - V IC=100uA , IE=0 Test Conditions BVCEO 40 - - V IC=10mA,IB=0 BVEBO 6 - - V IE=10uA ,IC=0 ICBO - - 10 nA VCB=60V, IE=0 ICEX - - 10 nA VCE=60V ,VEB(OFF)=3V IEBO - - 10 nA VEB=3V VCE(sat)1 - - 500 mV IC=380mA, IB=10mA VCE(sat)2 - - 1.0 V IC=500mA, IB=50mA VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA V VBE(sat)2 - - 2.0 hFE1 35 - - VCE=10V, IC=100uA hFE2 50 - - VCE=10V, IC=1mA hFE3 75 - - VCE=10V, IC=10mA hFE4 100 - 300 VCE=10V, IC=150mA Hfe5 40 - - VCE=10V, IC=500mA fT 300 - - MHz IC=500mA, IB=50mA VCB=20V, IC=20mA, f=100MHz 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165