GM2222A 1/2 NPN EPITAXIAL PLANAR TRANSISTOR Description The GM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 75 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 6.0 V Collector Current IC 600 mA Total Power Dissipation PD 1.2 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 75 - - V IC=10uA BVCEO 40 - - V IC=10mA BVEBO 6 - - V IE=10uA ICBO - - 10 nA VCB=60V ICEX - - 10 nA VCB=60V,VEB(off)=3V IEBO - - 50 nA VEB=3V VCE(sat)1 - - 300 mV IC=150mA, IB=15mA VCE(sat)2 - - 1 V IC=500mA, IB=50mA VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA V VBE(sat)2 Test Conditions - - 2 hFE1 35 - - VCE=10V, IC=100uA IC=500mA, IB=50mA hFE2 50 - - VCE=10V, IC=1mA hFE3 75 - - VCE=10V, IC=10mA hFE4 100 - 300 VCE=10V, IC=150mA hFE5 40 - - VCE=10V, IC=500mA hFE6 50 - - fT 300 - - VCE=1V, IC=150mA MHz VCE=20V, IC=20mA, f=100MHz 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165