Pb Free Plating Product ISSUED DATE :2005/08/10 REVISED DATE : N-CH BVDSS 20V N-CH RDS(ON) 60m N-CH ID 2.6A P-CH BVDSS -20V N-CH RDS(ON) 80m N-CH ID -2.3A GP2030S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Package Dimensions D E GAUGE PLANE Millimeter Min. Max. c A REF. SEATING PLANE b Z L Z SECTION Z - Z b e DIP-8 A A1 A2 b b1 b2 b3 c 0.381 2.921 0.356 0.356 1.143 0.762 0.203 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 3 ID @TA=25 Continuous Drain Current 3 ID @TA=70 Pulsed Drain Current 1 IDM PD @TA=25 Total Power Dissipation Linear Derating Factor 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 Ratings N-channel P-channel 20 -20 c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 Unit V 12 V 2.6 -2.3 A 2.1 -1.8 A 15 -10 A 12 2.0 0.016 Operating Junction and Storage Temperature Range REF. Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 62.5 W W/ Thermal Data Parameter Thermal Resistance Junction-ambient GP2030S 3 Max. Unit /W Page: 1/7 ISSUED DATE :2005/08/10 REVISED DATE : N-Channel Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.037 - Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA gfs - 3.6 - S VDS=5V, ID=2.6A IGSS - - 100 nA VGS= - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=16V, VGS=0 - - 60 - - 90 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA 12V VGS=4.5V, ID=2.6A VGS=2.5V, ID=1.8A Total Gate Charge2 Qg - 9 - Gate-Source Charge Qgs - 1 - Gate-Drain (“Miller”) Change Qgd - 4 - Td(on) - 6.5 - Tr - 14 - Td(off) - 20 - Tf - 15 - Input Capacitance Ciss - 300 - Output Capacitance Coss - 255 - Reverse Transfer Capacitance Crss - 115 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.7A, VGS=0V, Tj=25 IS - - 1.7 A VD=VG=0V, VS=1.2V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=2.6A VDS=10V VGS=4.5V ns VDS=10V ID=1A VGS=4.5V RG=6 RD=10 pF VGS=0V VDS=8V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current (Body Diode) Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Mounted on 1 in copper pad of FR4 board; 90 /W when mounted on Min. copper pad. GP2030S Page: 2/7 ISSUED DATE :2005/08/10 REVISED DATE : P-Channel Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.037 - Gate Threshold Voltage VGS(th) -0.5 - -1.0 V VDS=VGS, ID=-250uA gfs - 2.7 - S VDS=-5V, ID=-2.2A IGSS - - 100 nA VGS= - - -1 uA VDS=-20V, VGS=0 - - -25 uA VDS=-16V, VGS=0 - - 80 - - 135 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA 12V VGS=-4.5V, ID=-2.2A VGS=-2.5V, ID=-1.8A Total Gate Charge2 Qg - 11.5 - Gate-Source Charge Qgs - 3.2 - Gate-Drain (“Miller”) Change Qgd - 1.5 - Td(on) - 10 - Tr - 25 - Td(off) - 50 - Tf - 30 - Input Capacitance Ciss - 940 - Output Capacitance Coss - 440 - Reverse Transfer Capacitance Crss - 130 - Symbol Min. Typ. Max. Unit VSD - -0.75 -1.2 V IS=-1.8A, VGS=0V, Tj=25 IS - - -1.7 A VD=VG=0V, VS=-1.2V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=-2.2A VDS=-6V VGS=-4.5V ns VDS=-10V ID=-2.2A VGS=-4.5V RG=6 RD=4.5 pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current (Body Diode) Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Mounted on 1 in copper pad of FR4 board; 90 /W when mounted on Min. copper pad. GP2030S Page: 3/7 ISSUED DATE :2005/08/10 REVISED DATE : Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GP2030S Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2005/08/10 REVISED DATE : N-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform GP2030S Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2005/08/10 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GP2030S Page: 6/7 ISSUED DATE :2005/08/10 REVISED DATE : P-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GP2030S Page: 7/7