GTM GP9962

Pb Free Plating Product
ISSUED DATE :2005/08/08
REVISED DATE :
GP9962
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
40V
28m
7A
Description
The GP9962 provides the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low On-Resistance
*Single Drive Requirement
Package Dimensions
D
E
GAUGE PLANE
c
A
REF.
SEATING PLANE
b
Z
L
Z
SECTION Z - Z
b
e
DIP-8
A
A1
A2
b
b1
b2
b3
c
Millimeter
Min.
Max.
0.381
2.921
0.356
0.356
1.143
0.762
0.203
0.5334
4.953
0.559
0.508
1.778
1.143
0.356
REF.
c1
D
E
E1
e
HE
L
Millimeter
Min.
Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
10.92
2.921
3.810
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
Unit
VDS
40
V
VGS
3
3
Continuous Drain Current ,VGS@10V
Continuous Drain Current ,VGS@10V
Pulsed Drain Current
Symbol
1,2
20
V
ID @TA=25
7
A
ID @TA=70
5.5
A
20
A
2
W
IDM
PD @TA=25
Total Power Dissipation
Linear Derating Factor
0.016
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
62.5
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Unit
/W
1/4
ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
40
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.1
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
11
-
S
VDS=10V, ID=7A
IGSS
-
-
100
nA
VGS=
-
-
1
uA
VDS=40V, VGS=0
-
-
25
uA
VDS=32V, VGS=0
-
-
28
-
-
40
Qg
-
13
20
Gate-Source Charge
Qgs
-
4
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
Td(on)
-
10
-
Tr
-
8
-
Td(off)
-
26
-
Tf
-
9
-
Input Capacitance
Ciss
-
1170
1870
Output Capacitance
Coss
-
180
-
Reverse Transfer Capacitance
Crss
-
116
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=1.7A, VGS=0V
Reverse Recovery Time2
Trr
-
24
-
ns
Reverse Recovery Charge
Qrr
-
18
-
nC
IS=7A, VGS=0V
dI/dt=100A/ s
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
20V
VGS=10V, ID=7A
VGS=4.5V, ID=5A
nC
ID=7A
VDS=32V
VGS=4.5V
ns
VDS=20V
ID=1A
VGS=10V
RG=3.3
RD=20
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Mounted on 1 in copper pad of FR4 board; 90 /W when mounted on Min. copper pad.
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ISSUED DATE :2005/08/08
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/08/08
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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