Pb Free Plating Product ISSUED DATE :2006/02/06 REVISED DATE : GS152B P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 300m -0.7A Description The GS152B provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GS152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Low On-State Resistance:0.3 (max) *Ultra High Speed Switching Applications *Notebook PCs *Cellular and portable phones *On-board power supplies *Li-ion battery System Package Dimensions REF. A A1 A2 D E HE Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 IDM PD @TA=25 Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Unit V V A A W W/ Tj, Tstg Ratings -20 ±12 -0.7 -2.8 0.35 0.0028 -55 ~ +150 Symbol Rthj-a Value 360 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. GS152B Page: 1/4 ISSUED DATE :2006/02/06 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.1 - Gate Threshold Voltage VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-1mA gfs - 1.5 - S VDS=-10V, ID=-0.4A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V Drain-Source Leakage Current(Tj=25 ) IDSS - - -10 uA VDS=-20V, VGS=0 - - 300 - - 500 Forward Transconductance Static Drain-Source On-Resistance 2 RDS(ON) V/ m Total Gate Charge Qg - 3.2 - Gate-Source Charge Qgs - 0.7 - Gate-Drain (“Miller”) Change Qgd - 0.8 - Td(on) - 9.8 - Tr - 10.8 - Td(off) - 79.1 - Tf - 41.3 - Ciss - 290 - Output Capacitance Coss - 60 - Reverse Transfer Capacitance Crss - 45 - Symbol Min. Typ. Max. Unit VSD - - -1.1 V 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VGS=-4.5V, ID=-0.4A VGS=-2.5V, ID=-0.4A nC ID=-0.7A VDS=-10V VGS=-4.5V ns VDS=-10V ID=-0.4A VGS=-4.5V RG=6 Pf VGS=0V VDS=-20V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions IS=-0.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t GS152B 10sec. Page: 2/4 ISSUED DATE :2006/02/06 REVISED DATE : Characteristics Curve Fig 1. Drain Current v.s. Drain-Source Voltage Fig 2. Drain Current v.s. Gate-Source Voltage Fig 3. Drain-Source On-State Resistance v.s. Gate-Source Voltage Fig 4. Drain-Source On-State Resistance v.s. Drain Current Fig 5. Drain-Source On-State Resistance v.s. Ambient Temperature Fig 6. Gate-Source Cut-off Voltage Variance v.s. Ambient Temperature GS152B Page: 3/4 ISSUED DATE :2006/02/06 REVISED DATE : Fig 7. Capacitance v.s. Drain-Source Voltage Fig 8. Gate-Source Voltage v.s. Gate Charge Fig 9. Reverse Drain-Current v.s. Source-Drain Voltage Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GS152B Page: 4/4