Pb Free Plating Product ISSUED DATE :2004/09/15 REVISED DATE :2006/01/17B GS2N7002 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V 4.5 500mA Description The GS2N7002 is universally used for all commercial-industrial surface mount applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.8 1.10 0 0.10 0.8 1.00 1.80 2.20 1.15 1.35 1.80 2.40 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. REF. L1 L b c e Q1 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Tj, Tstg -55 ~ +150 Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Non-repetitive (tp 50us) Continuous Drain Current Pulsed Drain Current (1) (2) Power Dissipation Thermal Resistance ,Junction-to-Ambient Electrical Characteristics (Tj = 25 Parameter Unit VDS 60 V VGS ±20 V VGSM ±40 V ID 500 mA IDM 800 mA PD 225 mW RthJA 556 /W unless otherwise specified) Symbol Min. Drain-Source Breakdown Voltage BVDSS 60 Gate Threshold Voltage VGS(th) 1 Gate Body Leakage Current IGSS - - ±100 nA VGS=±20V, VDS=0 Zero Gate Voltage Drain Current IDSS - - 1 uA VDS=60V, VGS =0 ID(ON) 500 - - mA VDS=7.5V, VGS=10V - - 5 - - 4.5 80 - - On-State Drain Current Static Drain-Source on-State Resistance Forward Transconductance RDS(ON) GFS Typ. Max. Unit Test Conditions - - V VGS=0, ID=250uA - 2.5 V VDS=2.5V, ID=0.25mA ID=50mA, VGS =5V ID=500mA, VGS=10V mS Input Capacitance Ciss - - 50 pF Output Capacitance Coss - - 25 pF Reverse Transfer Capacitance Crss - - 5 pF VDS>2 VDS(ON), ID=200mA VDS=25V, VGS =0V, f=1MHz (1)The Power Dissipation of the package may result in a continuous train current. (2)Pulse Width GS2N7002 300us, Duty cycle 2%. Page: 1/3 ISSUED DATE :2004/09/15 REVISED DATE :2006/01/17B Characteristics Curve GS2N7002 Page: 2/3 ISSUED DATE :2004/09/15 REVISED DATE :2006/01/17B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GS2N7002 Page: 3/3