Pb Free Plating Product ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C GS3018 BVDSS RDS(ON) ID N-CHANNEL MOSFET Description 30V 8 115mA N-channel enhancement-mode MOSFET Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.8 1.10 0 0.10 0.8 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=100 IDM PD @TA=25 Unit V V mA mA mA W W/ Tj, Tstg Ratings 30 20 115 75 800 0.225 0.0018 -40 ~ +150 Symbol Rthj-a Ratings 556 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. GS3018 Page: 1/4 ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.8 - 2.0 V VDS=VGS, ID=0.1mA gfs 20 - - mS VDS=3V, ID=10mA Gate-Source Leakage Current IGSS - - ±1 uA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 uA VDS=30V, VGS=0 - 5 8 VGS=4V, ID=10mA - 7 13 VGS=2.5V, ID=1mA Forward Transconductance Static Drain-Source On-Resistance RDS(ON) Input Capacitance Ciss - - 50 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 Symbol Min. Typ. Max. Unit VSD - 0.84 1.5 V pF Test Conditions VGS=0V VDS=5V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=100mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad. GS3018 Page: 2/4 ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C Characteristics Curve GS3018 Page: 3/4 ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GS3018 Page: 4/4