1/3 G2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS TRANSISTOR Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Tj, Tstg -55 ~ +150 Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Non-repetitive (tp 50us) 60 Ta=25 Continuous Drain Current Pulsed Drain Current (Ta=25 ) VGS 20 V 40 V (1) Ta=100 (2) V VGSM 115 ID (1) 800 W 0.08 RthJA Thermal Resistance ,Junction-to-Ambient mA 0.2 PD Ta=100 mA 73 IDM Ta=25 Power Dissipation Characteristics Unit /W 625 at Ta = 25 Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID=10uA Gate Threshold Voltage VGS(th) 1 - 2.5 V VDS=2.5V, ID=0.25mA Gate Body Leakage Current IGSS - - 100 nA VGS= Zero Gate Voltage Drain Current Idss - - 1 uA VDS=60V, VGS=0 ID(ON) 500 - - mA VDS =7.5V ,VGS=10V - - 7.5 - - 13.5 125 25 Parameter On-State Drain Current Static Drain-Source on-State Resistance Forward Transconductance RDS(ON) GFS - - 7.5 - - 13.5 80 - - Test Conditions 20V, VDS=0 Id=50mA, VGS =5V Id=500mA, VGS=10V mS Input Capacitance Ciss - - 50 pF Output Capacitance Coss - - 25 pF Reverse Transfer Capacitance Crss - - 5 pF 25 125 VDS>2 VDS(ON), ID=200mA VDS=25V, VGS =0V, f=1MHz 2/3 (1)The Power Dissipation of the package may result in a continuous train current. (2)Pulse Width 300us, Duty cycle Characteristics Curve 2%. 3/3 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165