Pb Free Plating Product CORPORATION GM161 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B BVDSS RDS(ON) ID 20V 50m 5.3A Description The GM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. Features Capable of 2.5V gate drive Lower on-resistance Reliable and Rugged Applications Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery Systems Package Dimensions SOT-89 REF. A B C D E F Absolute Maximum Ratings Parameter Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 Symbol Ratings Drain-Source Voltage VDSS 20 Gate-Source Voltage VGS 12 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Unit V V Continuous Drain Current3 ,[email protected] ID @Ta=25 5.3 A Continuous Drain Current3 ,[email protected] ID @Ta=70 4.3 A IDM 1,2 Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range 10 A PD@Ta=25 2 W Tj, Tstg -55 ~ +150 Linear Derating Factor 0.01 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max. Symbol Ratings Rthj-amb 90 W/ Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS 20 - - V - 0.1 - 0.5 - 1.2 BVDSS/ Tj Breakdown Voltage Temperature Coefficient VGS(th) ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B V/ Test Conditions VGS=0, ID=250Ua Reference to 25 V VDS= VGS, ID=250uA Forward Transconductance gfs - 13 - S VDS=5.0V, ID=5.3A Gate-Source Leakage Current IGSS - - 100 nA VGS= - - 1 uA VDS=20V, VGS=0 - - 10 uA VDS=16V, VGS=0 - - 50 Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance 2 IDSS RDS(ON) - - 70 - - 250 Total Gate Charge Qg - 8.7 - Gate-Source Charge Qgs - 1.5 - Qgd - 3.6 - Td(on) - 6 - Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Tr - 14 - Td(off) - 18.4 - Tf - 2.8 - Input Capacitance Ciss - 603 - Output Capacitance Coss - 144 - Reverse Transfer Capacitance Crss - 111 - , ID=1mA 12V VGS=4.5V, ID=2.0A m VGS=2.5V, ID=2.0A VGS=1.5V, ID=0.5A, nC ID=5.3A VDS=10V VGS=4.5V ns VDS=15V ID=1A VGS=10V RG=2 RD=15 pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Forward On Voltage2 VSD - - 1.2 V IS=1.2A, VGS=0 Reverse Recovery Time Trr - 16.8 - ns Reverse Recovery Charge Qrr - 11 - nC IS=5.0A,VGS=0 dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on Min. copper pad. Characteristics Curve 2/4 CORPORATION ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B 3/4 CORPORATION ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4