GTM GM161

Pb Free Plating Product
CORPORATION
GM161
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/11/03
REVISED DATE :2005/07/21B
BVDSS
RDS(ON)
ID
20V
50m
5.3A
Description
The GM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
Features
Capable of 2.5V gate drive
Lower on-resistance
Reliable and Rugged
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery Systems
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Absolute Maximum Ratings
Parameter
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
Symbol
Ratings
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
VGS
12
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Unit
V
V
Continuous Drain Current3 ,[email protected]
ID @Ta=25
5.3
A
Continuous Drain Current3 ,[email protected]
ID @Ta=70
4.3
A
IDM
1,2
Pulsed Drain Current
Power Dissipation
Operating Junction and Storage Temperature Range
10
A
PD@Ta=25
2
W
Tj, Tstg
-55 ~ +150
Linear Derating Factor
0.01
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Ratings
Rthj-amb
90
W/
Unit
/W
1/4
CORPORATION
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
20
-
-
V
-
0.1
-
0.5
-
1.2
BVDSS/ Tj
Breakdown Voltage Temperature Coefficient
VGS(th)
ISSUED DATE :2004/11/03
REVISED DATE :2005/07/21B
V/
Test Conditions
VGS=0, ID=250Ua
Reference to 25
V
VDS= VGS, ID=250uA
Forward Transconductance
gfs
-
13
-
S
VDS=5.0V, ID=5.3A
Gate-Source Leakage Current
IGSS
-
-
100
nA
VGS=
-
-
1
uA
VDS=20V, VGS=0
-
-
10
uA
VDS=16V, VGS=0
-
-
50
Drain-Source Leakage Current(Tj=25
)
Drain-Source Leakage Current(Tj=70
)
Static Drain-Source On-Resistance
2
IDSS
RDS(ON)
-
-
70
-
-
250
Total Gate Charge
Qg
-
8.7
-
Gate-Source Charge
Qgs
-
1.5
-
Qgd
-
3.6
-
Td(on)
-
6
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Tr
-
14
-
Td(off)
-
18.4
-
Tf
-
2.8
-
Input Capacitance
Ciss
-
603
-
Output Capacitance
Coss
-
144
-
Reverse Transfer Capacitance
Crss
-
111
-
, ID=1mA
12V
VGS=4.5V, ID=2.0A
m
VGS=2.5V, ID=2.0A
VGS=1.5V, ID=0.5A,
nC
ID=5.3A
VDS=10V
VGS=4.5V
ns
VDS=15V
ID=1A
VGS=10V
RG=2
RD=15
pF
VGS=0V
VDS=15V
f=1.0MHz
Source-Drain Diode
Forward On Voltage2
VSD
-
-
1.2
V
IS=1.2A, VGS=0
Reverse Recovery Time
Trr
-
16.8
-
ns
Reverse Recovery Charge
Qrr
-
11
-
nC
IS=5.0A,VGS=0
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on Min. copper pad.
Characteristics Curve
2/4
CORPORATION
ISSUED DATE :2004/11/03
REVISED DATE :2005/07/21B
3/4
CORPORATION
ISSUED DATE :2004/11/03
REVISED DATE :2005/07/21B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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