GTM G2304

Pb Free Plating Product
CORPORATION
G2304
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
BVDSS
RDS(ON)
ID
25V
117m
2.7A
Description
The G2304 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
Super High Dense Cell Design for Extremely Low RDS(ON)
Reliable and Rugged
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered System.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current , [email protected]
3
Continuous Drain Current , [email protected]
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
25
20
2.7
2.2
10
1.38
0.01
-55 ~ +150
Symbol
Rthj-a
Ratings
90
Unit
/W
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient Max.
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CORPORATION
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
25
-
-
V
-
0.1
-
1.0
-
3.0
BVDSS/ Tj
Breakdown Voltage Temperature Coefficient
VGS(th)
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
V/
Test Conditions
VGS=0, ID=250uA
Reference to 25
V
VDS= VGS, ID=250uA
Forward Transconductance
gfs
-
3.4
-
S
VDS=4.5V, ID=2.5A
Gate-Source Leakage Current
IGSS
-
-
100
nA
VGS=
-
-
1
uA
VDS=25V, VGS=0
-
-
10
uA
VDS=25V, VGS=0
-
-
117
Drain-Source Leakage Current(Tj=25
)
Drain-Source Leakage Current(Tj=70
)
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
, ID=1mA
m
20V
ID=2.5A, VGS =10V
-
-
190
ID=2.0A, VGS =4.5V
Qg
-
5.9
10
ID=2.5A
Gate-Source Charge
Qgs
-
0.8
-
Gate-Drain (“Miller”) Change
Qgd
-
2.1
-
VGS=10V
Td(on)
-
4.5
-
Tr
-
11.5
-
Td(off)
-
12
-
ns
Tf
-
3
-
VDS=15V
ID=1A
VGS=10V
RG=6
RD=15
Input Capacitance
Ciss
-
110
-
Output Capacitance
Coss
-
85
-
pF
Reverse Transfer Capacitance
Crss
-
39
-
VGS=0V
VDS=15V
f=1.0MHz
VSD
-
-
1.2
V
IS=1.25A, V GS=0 Tj=25
VD= VG=0V, VS =1.2V
Total Gate Charge2
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS=15V
Source-Drain Diode
Forward On Voltage2
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode) 1
IS
-
-
1
A
ISM
-
-
10
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on min. copper pad.
Characteristics Curve
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CORPORATION
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
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CORPORATION
ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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