Pb Free Plating Product ISSUED DATE :2006/08/08 REVISED DATE : GTT8209E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 21m 7A Description The GTT8209E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The GTT8209E is universally used for all commercial-industrial applications. Features * Lower Gate Charge *Small Package Outline *RoHS Compliant Package Dimensions REF. A A1 A2 c D E E1 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. GTT8209E Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Unit V V A A A W W/ Tj, Tstg Ratings 20 ±12 7 5.7 30 1.2 0.01 -55 ~ +150 Symbol Rthj-a Value 110 Unit /W Page: 1/4 ISSUED DATE :2006/08/08 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS=VGS, ID=250uA gfs - 24 - S VDS=5V, ID=7A IGSS - - ±10 uA VGS= ±10V - - 1 uA VDS=16V, VGS=0 - - 5 uA VDS=16V, VGS=0 - - 21 - - 24 - - 32 - - 50 Qg - 9.3 - Gate-Source Charge Qgs - 0.6 - Gate-Drain (“Miller”) Change Qgd - 3.6 - Td(on) - 5.7 - Tr - 11.5 - Td(off) - 31.5 - Tf - 9.7 - Input Capacitance Ciss - 630 Output Capacitance Coss - 164 - Reverse Transfer Capacitance Crss - 137 - Rg - 1.5 - Symbol Min. Typ. Max. Unit VSD - - 1.0 V IS=1.0A, VGS=0V Reverse Recovery Time Trr - 15.2 - ns Reverse Recovery Charge Qrr - 6.3 - nC IS=7A, VGS=0V dI/dt=100A/ s Continuous Source Current (Body Diode) IS - - 2.5 A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance Total Gate Charge2 Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance IDSS RDS(ON) Test Conditions VGS=10V, ID=7.0A m VGS=4.5V, ID=6.6A VGS=2.5V, ID=5.5A VGS=1.8V, ID=2.0A nC ID=7A VDS=10V VGS=4.5V ns VDS=10V VGS=5V RG=3 RL=1.4 pF VGS=0V VDS=10V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions VD=VG=0V, VS=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board t GTT8209E 5sec; 180 /W when mounted on Min. copper pad. Page: 2/4 ISSUED DATE :2006/08/08 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature 10 1 0.1 0.01 0.001 0.0001 0.00001 Fig 5. On-Resistance v.s. Gate-Source Voltage GTT8209E Fig 6. Body Diode Characteristics Page: 3/4 ISSUED DATE :2006/08/08 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTT8209E Page: 4/4