GTM GSC4409

Pb Free Plating Product
ISSUED DATE :2006/10/19
REVISED DATE :
GSC4409
BVDSS
RDS(ON)
ID
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
-30V
7.5m
-15A
Description
The GSC4409 uses advanced trench technology to provide excellent on-resistance and ultra low gate charge.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for use as a load switch or in PWM applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
0.19
6.20
5.00
4.00
8°
0.90
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
Ratings
Unit
VDS
-30
V
VGS
±20
V
Continuous Drain Current
3
ID @TA=25
-15
A
Continuous Drain Current
3
ID @TA=70
-12.8
A
-80
A
2.5
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
0.02
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-amb
50
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GSC4409
3
Max.
Unit
/W
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ISSUED DATE :2006/10/19
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th)
-1.4
-
-2.7
V
VDS=VGS, ID=-250uA
gfs
-
50
-
S
VDS=-5V, ID=-15A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
-5
uA
VDS=-30V, VGS=0
-
-
-25
uA
VDS=-24V, VGS=0
-
-
7.5
-
-
12
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
m
Test Conditions
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-10A
Total Gate Charge2
Qg
-
100
120
Gate-Source Charge
Qgs
-
14.5
-
Gate-Drain (“Miller”) Change
Qgd
-
23
-
Td(on)
-
14
-
Tr
-
16.5
-
Td(off)
-
76.5
-
Tf
-
37.5
-
Input Capacitance
Ciss
-
5270
6400
Output Capacitance
Coss
-
945
-
Reverse Transfer Capacitance
Crss
-
745
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.0
V
IS=-1.0A, VGS=0V
IS
-
-
-5
A
VD= VG=0V, VS=-1.0V
Reverse Recovery Time
Trr
-
36.7
-
ns
Reverse Recovery Charge
Qrr
-
28
-
nC
IS=-15A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=-15A
VDS=-15V
VGS=-10V
ns
VDS=-15V
VGS=-10V
RG=3
RL=1
pF
VGS=0V
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
2
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC4409
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ISSUED DATE :2006/10/19
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
100
10
1
0.1
0.01
0.001
0.0001
0.00001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
GSC4409
Fig 6. Body Diode Characteristics
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ISSUED DATE :2006/10/19
REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Maximum
Power Dissipation
v.s. Junction Temperature
Fig 9. Gate Charge Characteristics
0.00001
0.0001
0.001
0.01
Fig 10. Typical Capacitance Characteristics
0.1
1
10
100
1000
Fig 11. Normalized Maximum Transient Thermal Impedance
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSC4409
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