PHOTO IC Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 Fewer detection errors even under disturbance background light These light modulation photo ICs were developed for optical synchronous detection under disturbance background light. A photodiode, preamplifier, comparator, oscillator, LED driver and signal processing circuit, etc. are all integrated on a monolithic photo IC chip. Optical synchronous type photoreflectors and photointerrupters, which less susceptible to disturbance background light, can be easily configured by just connecting an external LED to this photo IC. Our unique circuit design achieves an allowable background light level of 10000 lx Typ. (S4282-51, S6986, S10053) and a minimum detection level of 0.2 µW/mm2 Typ. (S6809, S6846, S7136/-10). Features Applications l Large allowable background light level S4282-51, S6986, S10053: 10000 lx Typ. S6809, S6846, S7136/-10 : 3000 lx Typ. l Minimum detection level S4282-51, S6986, S10053: 0.7 µW/mm2 Typ. S6809, S6846, S7136/-10 : 0.2 µW/mm2 Typ. l Digital output (Output appears “L” by light input.) l Small hysteresis (S6809) l Small SMD package (S10053) l Paper detection in office machine (copiers, fax machines, etc.) l Optical switch ■ Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage Output voltage Output current Cathode output voltage Cathode output current Power dissipation *1 Operating temperature Storage temperature Symbol Vcc Vo Io Vcath Icath P Topr Tstg S4282-51, S6986, S10053 S6809, S6846, S7136/-10 -0.5 to +16 -0.5 to +16 50 -0.5 to +16 70 250 -25 to +60 -40 to +100 Unit V V mA V mA mW °C °C *1: Derate power dissipation at a rate of 3.3 mW/°C above Ta=25 °C ■ Spectral response (typical example) S4282-51, S6986, S10053 (Ta=25 ˚C) 100 80 60 40 20 0 400 600 800 1000 (Ta=25 ˚C) 100 RELATIVE SENSITIVITY (%) RELATIVE SENSITIVITY (%) S6809, S6846, S7136/-10 1200 80 60 40 20 0 400 600 800 1000 1200 WAVELENGTH (nm) WAVELENGTH (nm) KPICB0001EB KPICB0002EA Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 ■ Electrical and optical characteristics (Ta=25 °C, Vcc=5 V) Symbol Supply voltage Current consumption Low level ou tpu t voltage High level output voltage Low level ou tpu t voltage Low level ou tpu t curre nt Pulse cycle Pulse width H→L Threshold light level Vcc Output Parameter 4 11 - 4 11 mA VOL IOL=16 mA - 0.2 0.4 - 0.2 0.4 V 4.9 - - VOH 4.7 kΩ b etwe e n Vcc and Vo Tp Tw EHL - Frequency response f Allowable background light level λ=940 nm No background light Signal light: 5 µW / m m 2 λp=940 nm Ex Background light: “A” light source Cathode V 4.9 - - V - - 0.8 V 15 35 60 65 4 130 8 220 13.7 65 4 130 8 220 13.7 µs µs - 0.7 2 - 0.2 1.0 µW/mm2 0.45 0.65 0.95 0.45 0.65 (S6809) 0.65 0.8 (S6809) 0.95 0.95 (S6809) - 0.5 1.25 - 0.5 1.25 - kHz 5000 10000 - 2000 3000 - lx *3: Output Vcc mA Cathode Vcc Output Vcc Vcc CATHODE (LED) Vout GND GND 10 k CATHODE (LED) Vout GND GND KPICC0009EA ■ Block diagram and internal functions CONSTANT VOLTAGE Vcc KPICC0010EA (a) Oscillator and timing signal generator The oscillator produces a reference oscillation output by charging and discharging the built-in capacitor with constant current. The oscillation output is fed to the timing signal generator, which then creates LED drive pulses and various timing pulses for digital signal processing. (b) LED driver circuit BUFFER This circuit drives an external LED using the LED drive pulses created by the timing signal generator. The duty cycle is 1/16. COMPARATOR (c) Photodiode and preamplifier circuit PREAMP The photodiode is formed on the same monolithic chip. A photocurrent generated in the photodiode is converted to a voltage by a preamplifier circuit. The preamplifier circuit uses an AC amplifier to expand the dynamic range versus DC or low-frequency background light, without impairing signal detection sensitivity. Vref SIGNAL PROCESSING CIRCUIT TIMING GENERATOR OSCILLATOR Vout OUTPUT CIRCUIT LED DRIVER CATHODE (LED) GND TRUTH TABLE INPUT V - Icath Vcath=1.2 V PD Unit Icc Vcath Icath=40 mA Cathode S6809, S6846, S7136 /-10 Output: open collector *3 Cathode: open collector drive Min. Typ. Max. 4.5 16 Vo, LED terminals open Hysteresis *2: Condition S4282-51, S6986, S10053 Output: built-in pull-up resistor *2 Cathode: constant current drive Min. Typ. Max. 4.5 16 OUTPUT LEVEL LIGHT ON LOW LIGHT OFF HIGH (d) Capacitive coupling, buffer amplifier and reference voltage generator Capacitive coupling removes low-frequency noise and also cancels the DC offset in the preamplifier. The buffer amplifier boosts the signal up to the comparator level, and the reference voltage generator produces a comparator level voltage. (e) Comparator circuit The comparator circuit has a hysteresis function to prevent chattering caused by small fluctuations in the input light. (f) Signal processing circuit The signal processing circuit consists of a gate circuit and digital integrator circuit. The gate circuit discriminates input pulses during synchronous detection, to prevent operational errors caused by asynchronous background light. Background light which is synchronized with the signal detection timing cannot be eliminated by the gate circuit, but is canceled out by the digital integrator circuit at the latter stage. (g) Output circuit KPICC0002EA This circuit serves as an output buffer for the signal processing circuit and outputs the signal to an external circuit. S4282-51, S6809, S6846, S6986, S7136/-10, S10053 Light modulation photo IC ■ Dimensional outlines (unit: mm) S6809, S6846, S6986 5.2 ± 0.3 (INCLUDING BURR) 2.0 5.2 ± 0.3 (INCLUDING BURR) (0.8) 0.45 5˚ 16.5 ± 1.0 0.55 2.0 (DEPTH 0.15 MAX.) 10˚ 1.0 (DEPTH 0.15 MAX.) 1.0 (1.0) 5.0 2.05 ± 0.2 5.0 CENTER OF 2.5 ± 0.2 ACTIVE AREA +0.15 0.25 -0.1 1.27 1.27 1.27 (SPECIFIED AT THE LEAD ROOT) 0.7 ± 0.15 PHOTOSENSITIVE SURFACE 10˚ Vout GND CATHODE (LED) Vcc Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. 5˚ KPICA0008EC S4282-51, S7136 4.6 ± 0.2 (INCLUDING BURR) 3.1 ± 0.4 5.5 5.6 ± 0.2 (INCLUDING BURR) 3˚ 10˚ 2.54 5.4 * 0.7 CENTER OF ACTIVE AREA 0.5 4.5 * 1.0 0.25 3˚ 4.5 * 7.5 ± 5˚ 2.0 CATHODE (LED) Vcc Vout GND (SHORT LEAD) 4.5 ± 0.4 5.75 ± 0.2 5˚ 0.7 ± 0.15 PHOTOSENSITIVE SURFACE 2.0 (DEPTH 0.15 MAX.) Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X≤±0.2 Y≤±0.2 KPICA0009EB Light modulation photo IC S4282-51, S6809, S6846, S6986, S7136/-10, S10053 S7136-10 5.6 ± 0.2 (INCLUDING BURR) 5.4 * 3˚ 2.54 5.5 * CENTER OF ACTIVE AREA 10˚ 4.6 ± 0.2 (INCLUDING BURR) 0.5 0.6 INDEX MARK 0.7 ± 0.15 1.5 ± 0.4 1.5 ± 0.4 4.5 * 1.0 7.5 ± 0.3 2.0 0.7 ± 0.3 PHOTOSENSITIVE SURFACE 0.7 ± 0.3 5˚ 3˚ 0.1 ± 0.1 0.25 CATHODE (LED) Vcc Vout GND Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Chip position accuracy with respect to package dimensions marked * X≤±0.2 KPICA0034EB Y≤±0.2 S10053 1.0 ± 0.4 1.0 ± 0.4 3.9 4.0 * 3.4 MIRROR AREA RANGE 3.8 0.8 0.8 0.8 0.8 4.2 ± 0.2 (INCLUDING BURR) 0.3 0.4 4.1 Max. CENTER OF (INCLUDING BURR) ACTIVE AREA 0.05 0.5 5.0 ± 0.3 * 0.45 ± 0.3 0.75 0.45 ± 0.3 2.8 0.1 ± 0.1 0.15 2.4 MIRROR AREA RANGE 2.9 3.0 * 1.3 PHOTOSENSITIVE SURFACE Vout (GND) (GND) (GND) GND CATHODE (LED) (GND) (GND) (SHORT LEAD) (GND) Vcc (GND) terminals should be connected to GND terminal on board. Tolerance unless otherwise noted: ±0.1 Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X≤±0.2 Y≤±0.2 KPICA0076EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPIC1002E06 Jul. 2007 DN