PHOTODIODE Si PIN photodiode S8284 Quadrant PIN photodiode for violet laser S8284 is a high-sensitivity Si PIN photodiode optimized for violet laser detection and especially ideal for optical disc pickups using a violet laser which has now been put into practical use. S8284 offers 30 % higher sensitivity (at 410 nm) than the conventional type (S1651). S8284 also features high-speed response at a low bias voltage. Features Applications l TO-18 package l High sensitivity: 0.3 A/W Typ. (λ=410 nm) l High-speed response: 500 MHz Typ. (VR=3 V) l Active area: 0.6 × 1.2 mm/4 elements l Violet laser detection l Optical disc pickup using violet laser ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 20 -20 to +100 -55 to +125 Unit V °C °C ■ Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Cut-off frequency Symbol λ λp S ID Ct fc Condition λ=410 nm VR=3 V, all elements VR=3 V, f=1 MHz VR=3 V, RL=50 Ω -3 dB Min. 0.26 - Typ. 320 to 1000 760 0.30 10 2 Max. 200 4 Unit nm nm A/W pA pF 300 500 - MHz 1 Si PIN photodiode S8284 ■ Dark current vs. reverse voltage ■ Spectral response (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) 100 pA 0.7 0.5 DARK CURRENT PHOTO SENSITIVITY (A/W) 0.6 0.4 0.3 0.2 10 pA 1 pA 0.1 0 200 400 600 800 100 fA 0.01 1000 WAVELENGTH (nm) 0.1 1 10 100 REVERSE VOLTAGE (V) KPINB0196EA KPINB0195EA ■ Terminal capacitance vs. reverse voltage 0.01 0.01 10 pF X 1.2 5.4 ± 0.2 4.7 ± 0.1 4.0 ± 0.2 WINDOW 3.0 ± 0.1 0.45 LEAD 1 10 DETAILS OF PHOTODIODES (14) PHOTOSENSITIVE SURFACE (1.6) 1 pF 100 fF 0.1 b a c d 0.6 Y 5.4 ± 0.2 3.0 ± 0.1 4.7 ± 0.1 100 pF TERMINAL CAPACITANCE ■ Dimensional outline (unit: mm) (Typ. Ta=25 ˚C) 100 2.54 ± 0.2 REVERSE VOLTAGE (V) KPINB0197EA a b COMMON TO CASE c d KPINA0022EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1055E01 Jan. 2001 DN